JP2738289C - - Google Patents
Info
- Publication number
- JP2738289C JP2738289C JP2738289C JP 2738289 C JP2738289 C JP 2738289C JP 2738289 C JP2738289 C JP 2738289C
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate insulating
- gate
- insulating layer
- pixel electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 31
- 239000004973 liquid crystal related substance Substances 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 22
- 239000011159 matrix material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 95
- 239000010408 film Substances 0.000 description 27
- 238000001312 dry etching Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910018904 PSV1 Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Family
ID=
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