KR0161285B1 - 반도체 불휘발성 기억장치와 그것을 사용한 정보처리 시스템 - Google Patents

반도체 불휘발성 기억장치와 그것을 사용한 정보처리 시스템 Download PDF

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Publication number
KR0161285B1
KR0161285B1 KR1019900000592A KR900000592A KR0161285B1 KR 0161285 B1 KR0161285 B1 KR 0161285B1 KR 1019900000592 A KR1019900000592 A KR 1019900000592A KR 900000592 A KR900000592 A KR 900000592A KR 0161285 B1 KR0161285 B1 KR 0161285B1
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KR
South Korea
Prior art keywords
address
signal
mosfet
circuit
voltage
Prior art date
Application number
KR1019900000592A
Other languages
English (en)
Korean (ko)
Other versions
KR900013522A (ko
Inventor
고이찌 세끼
다께시 와다
다다시 무또
가즈요시 쇼지
야스로 구보따
Original Assignee
미다 가쓰시게
가부시끼가이샤 히다찌세이사꾸쇼
오노 미노루
히다찌초 엘 에스 아이엔지니어링 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미다 가쓰시게, 가부시끼가이샤 히다찌세이사꾸쇼, 오노 미노루, 히다찌초 엘 에스 아이엔지니어링 가부시끼가이샤 filed Critical 미다 가쓰시게
Publication of KR900013522A publication Critical patent/KR900013522A/ko
Priority to KR1019980017772A priority Critical patent/KR0176313B1/ko
Priority to KR1019980017773A priority patent/KR0176312B1/ko
Priority to KR1019980017771A priority patent/KR0176314B1/ko
Application granted granted Critical
Publication of KR0161285B1 publication Critical patent/KR0161285B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements

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  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019900000592A 1989-02-06 1990-01-19 반도체 불휘발성 기억장치와 그것을 사용한 정보처리 시스템 KR0161285B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019980017772A KR0176313B1 (ko) 1989-02-06 1998-05-18 반도체집적회로장치
KR1019980017773A KR0176312B1 (ko) 1989-02-06 1998-05-18 반도체집적회로장치를 사용한 정보처리시스템
KR1019980017771A KR0176314B1 (ko) 1989-02-06 1998-05-18 반도체집적회로장치

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP89-27271 1989-02-06
JP2727189 1989-02-06
JP1-27271 1989-02-06
JP24360389A JP2654596B2 (ja) 1989-02-06 1989-09-20 不揮発性記憶装置
JP1-243603 1989-09-20
JP89-243603 1989-09-20

Related Child Applications (3)

Application Number Title Priority Date Filing Date
KR1019980017772A Division KR0176313B1 (ko) 1989-02-06 1998-05-18 반도체집적회로장치
KR1019980017771A Division KR0176314B1 (ko) 1989-02-06 1998-05-18 반도체집적회로장치
KR1019980017773A Division KR0176312B1 (ko) 1989-02-06 1998-05-18 반도체집적회로장치를 사용한 정보처리시스템

Publications (2)

Publication Number Publication Date
KR900013522A KR900013522A (ko) 1990-09-06
KR0161285B1 true KR0161285B1 (ko) 1999-02-01

Family

ID=26365177

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900000592A KR0161285B1 (ko) 1989-02-06 1990-01-19 반도체 불휘발성 기억장치와 그것을 사용한 정보처리 시스템

Country Status (2)

Country Link
JP (1) JP2654596B2 (ja)
KR (1) KR0161285B1 (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940006611B1 (ko) * 1990-08-20 1994-07-23 삼성전자 주식회사 전기적으로 소거 및 프로그램이 가능한 반도체 메모리장치의 자동 소거 최적화회로 및 방법
JPH04351794A (ja) * 1991-05-29 1992-12-07 Hitachi Ltd 不揮発性記憶装置
US6347051B2 (en) 1991-11-26 2002-02-12 Hitachi, Ltd. Storage device employing a flash memory
JP3080744B2 (ja) * 1991-12-27 2000-08-28 日本電気株式会社 電気的に書き込み一括消去可能な不揮発性半導体記憶装置
US7057937B1 (en) 1992-03-17 2006-06-06 Renesas Technology Corp. Data processing apparatus having a flash memory built-in which is rewritable by use of external device
US6414878B2 (en) 1992-03-17 2002-07-02 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US5687345A (en) * 1992-03-17 1997-11-11 Hitachi, Ltd. Microcomputer having CPU and built-in flash memory that is rewritable under control of the CPU analyzing a command supplied from an external device
TW231343B (ja) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
US6549974B2 (en) 1992-06-22 2003-04-15 Hitachi, Ltd. Semiconductor storage apparatus including a controller for sending first and second write commands to different nonvolatile memories in a parallel or time overlapped manner
DE69330434T2 (de) * 1993-05-28 2002-05-02 Macronix Int Co Ltd Flash-eprom mit block-löschmarkierungen für überlöschschutz.
JPH0729386A (ja) * 1993-07-13 1995-01-31 Hitachi Ltd フラッシュメモリ及びマイクロコンピュータ
JPH0773685A (ja) * 1993-09-06 1995-03-17 Hitachi Ltd 半導体不揮発性記憶装置
JP3448365B2 (ja) * 1994-09-20 2003-09-22 三菱電機株式会社 不揮発性半導体記憶装置
JP3793464B2 (ja) * 2002-01-21 2006-07-05 株式会社日立製作所 半導体記憶装置
JP3793540B2 (ja) * 2004-04-12 2006-07-05 株式会社日立製作所 半導体記憶装置
JP3793542B2 (ja) * 2004-12-28 2006-07-05 株式会社日立製作所 半導体記憶装置
JP5484233B2 (ja) * 2010-07-16 2014-05-07 株式会社日立製作所 フラッシュメモリ劣化判定装置およびフラッシュメモリの劣化判定方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2828836C2 (de) * 1978-06-30 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch löschbarer, nichtflüchtiger Speicher
JPS62205599A (ja) * 1986-03-05 1987-09-10 Nec Corp 書込可能読出専用記憶回路
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory

Also Published As

Publication number Publication date
KR900013522A (ko) 1990-09-06
JP2654596B2 (ja) 1997-09-17
JPH02289997A (ja) 1990-11-29

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