JPWO2024075704A5 - - Google Patents

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Publication number
JPWO2024075704A5
JPWO2024075704A5 JP2024515144A JP2024515144A JPWO2024075704A5 JP WO2024075704 A5 JPWO2024075704 A5 JP WO2024075704A5 JP 2024515144 A JP2024515144 A JP 2024515144A JP 2024515144 A JP2024515144 A JP 2024515144A JP WO2024075704 A5 JPWO2024075704 A5 JP WO2024075704A5
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Japan
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semiconductor processing
processing solution
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ion
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JP2024515144A
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Japanese (ja)
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JP7600466B2 (ja
JPWO2024075704A1 (https=
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Priority claimed from PCT/JP2023/035958 external-priority patent/WO2024075704A1/ja
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Priority to JP2024211777A priority Critical patent/JP2025023273A/ja
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JP2024515144A 2022-10-03 2023-10-02 半導体用処理液 Active JP7600466B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024211777A JP2025023273A (ja) 2022-10-03 2024-12-04 半導体用処理液

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022159584 2022-10-03
JP2022159584 2022-10-03
PCT/JP2023/035958 WO2024075704A1 (ja) 2022-10-03 2023-10-02 半導体用処理液

Related Child Applications (1)

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JP2024211777A Division JP2025023273A (ja) 2022-10-03 2024-12-04 半導体用処理液

Publications (3)

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JPWO2024075704A1 JPWO2024075704A1 (https=) 2024-04-11
JPWO2024075704A5 true JPWO2024075704A5 (https=) 2024-10-03
JP7600466B2 JP7600466B2 (ja) 2024-12-16

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ID=90608159

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JP2024515144A Active JP7600466B2 (ja) 2022-10-03 2023-10-02 半導体用処理液
JP2024211777A Pending JP2025023273A (ja) 2022-10-03 2024-12-04 半導体用処理液

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JP2024211777A Pending JP2025023273A (ja) 2022-10-03 2024-12-04 半導体用処理液

Country Status (5)

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US (1) US20250084309A1 (https=)
JP (2) JP7600466B2 (https=)
KR (2) KR20250160213A (https=)
TW (1) TWI897049B (https=)
WO (1) WO2024075704A1 (https=)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100980607B1 (ko) * 2007-11-08 2010-09-07 주식회사 하이닉스반도체 루테늄 연마용 슬러리 및 그를 이용한 연마 방법
US8211800B2 (en) * 2010-08-23 2012-07-03 Kabushiki Kaisha Toshiba Ru cap metal post cleaning method and cleaning chemical
KR102022139B1 (ko) * 2012-03-16 2019-09-17 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP2014103179A (ja) * 2012-11-16 2014-06-05 Fujifilm Corp 半導体基板のエッチング液、これを用いたエッチング方法及び半導体素子の製造方法
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液
CN111684570B (zh) * 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
CN111684575B (zh) * 2018-02-05 2023-09-29 富士胶片株式会社 药液、药液的制造方法、基板的处理方法
JP6901998B2 (ja) 2018-06-15 2021-07-14 株式会社トクヤマ 4級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物
JP7050184B2 (ja) * 2019-09-27 2022-04-07 株式会社トクヤマ ルテニウムの半導体用処理液及びその製造方法
JP6874231B1 (ja) * 2019-09-27 2021-05-19 株式会社トクヤマ RuO4ガスの発生抑制剤及びRuO4ガスの発生抑制方法
WO2021210310A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 処理液、化学的機械的研磨方法、半導体基板の処理方法
JP7375032B2 (ja) * 2020-08-07 2023-11-07 株式会社トクヤマ 半導体ウエハ用処理液
JP2022099242A (ja) * 2020-12-22 2022-07-04 東京応化工業株式会社 精製オルト過ヨウ素酸水溶液の製造方法、半導体素子の製造方法及びオルト過ヨウ素酸水溶液

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