JP7600466B2 - 半導体用処理液 - Google Patents

半導体用処理液 Download PDF

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Publication number
JP7600466B2
JP7600466B2 JP2024515144A JP2024515144A JP7600466B2 JP 7600466 B2 JP7600466 B2 JP 7600466B2 JP 2024515144 A JP2024515144 A JP 2024515144A JP 2024515144 A JP2024515144 A JP 2024515144A JP 7600466 B2 JP7600466 B2 JP 7600466B2
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Japan
Prior art keywords
ion
ions
mass
semiconductor processing
processing solution
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JP2024515144A
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English (en)
Japanese (ja)
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JPWO2024075704A1 (https=
JPWO2024075704A5 (https=
Inventor
雄山 鈴木
由樹 吉川
伴光 佐藤
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Tokuyama Corp
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Tokuyama Corp
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Publication of JPWO2024075704A1 publication Critical patent/JPWO2024075704A1/ja
Publication of JPWO2024075704A5 publication Critical patent/JPWO2024075704A5/ja
Priority to JP2024211777A priority Critical patent/JP2025023273A/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2024515144A 2022-10-03 2023-10-02 半導体用処理液 Active JP7600466B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024211777A JP2025023273A (ja) 2022-10-03 2024-12-04 半導体用処理液

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022159584 2022-10-03
JP2022159584 2022-10-03
PCT/JP2023/035958 WO2024075704A1 (ja) 2022-10-03 2023-10-02 半導体用処理液

Related Child Applications (1)

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JP2024211777A Division JP2025023273A (ja) 2022-10-03 2024-12-04 半導体用処理液

Publications (3)

Publication Number Publication Date
JPWO2024075704A1 JPWO2024075704A1 (https=) 2024-04-11
JPWO2024075704A5 JPWO2024075704A5 (https=) 2024-10-03
JP7600466B2 true JP7600466B2 (ja) 2024-12-16

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ID=90608159

Family Applications (2)

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JP2024515144A Active JP7600466B2 (ja) 2022-10-03 2023-10-02 半導体用処理液
JP2024211777A Pending JP2025023273A (ja) 2022-10-03 2024-12-04 半導体用処理液

Family Applications After (1)

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JP2024211777A Pending JP2025023273A (ja) 2022-10-03 2024-12-04 半導体用処理液

Country Status (5)

Country Link
US (1) US20250084309A1 (https=)
JP (2) JP7600466B2 (https=)
KR (2) KR20250160213A (https=)
TW (1) TWI897049B (https=)
WO (1) WO2024075704A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090124082A1 (en) 2007-11-08 2009-05-14 Hynix Semiconductor Inc. Slurry for polishing ruthenium and method for polishing using the same
US20120045898A1 (en) 2010-08-23 2012-02-23 Toshiba America Electronic Components, Inc. Ru CAP METAL POST CLEANING METHOD AND CLEANING CHEMICAL
WO2019150990A1 (ja) 2018-02-05 2019-08-08 富士フイルム株式会社 薬液、薬液の製造方法、基板の処理方法
WO2022030627A1 (ja) 2020-08-07 2022-02-10 株式会社トクヤマ 半導体ウエハ用処理液
JP2022099242A (ja) 2020-12-22 2022-07-04 東京応化工業株式会社 精製オルト過ヨウ素酸水溶液の製造方法、半導体素子の製造方法及びオルト過ヨウ素酸水溶液

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102022139B1 (ko) * 2012-03-16 2019-09-17 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP2014103179A (ja) * 2012-11-16 2014-06-05 Fujifilm Corp 半導体基板のエッチング液、これを用いたエッチング方法及び半導体素子の製造方法
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液
CN111684570B (zh) * 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
JP6901998B2 (ja) 2018-06-15 2021-07-14 株式会社トクヤマ ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物
JP7050184B2 (ja) * 2019-09-27 2022-04-07 株式会社トクヤマ ルテニウムの半導体用処理液及びその製造方法
JP6874231B1 (ja) * 2019-09-27 2021-05-19 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
WO2021210310A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 処理液、化学的機械的研磨方法、半導体基板の処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090124082A1 (en) 2007-11-08 2009-05-14 Hynix Semiconductor Inc. Slurry for polishing ruthenium and method for polishing using the same
US20120045898A1 (en) 2010-08-23 2012-02-23 Toshiba America Electronic Components, Inc. Ru CAP METAL POST CLEANING METHOD AND CLEANING CHEMICAL
WO2019150990A1 (ja) 2018-02-05 2019-08-08 富士フイルム株式会社 薬液、薬液の製造方法、基板の処理方法
WO2022030627A1 (ja) 2020-08-07 2022-02-10 株式会社トクヤマ 半導体ウエハ用処理液
JP2022099242A (ja) 2020-12-22 2022-07-04 東京応化工業株式会社 精製オルト過ヨウ素酸水溶液の製造方法、半導体素子の製造方法及びオルト過ヨウ素酸水溶液

Also Published As

Publication number Publication date
US20250084309A1 (en) 2025-03-13
WO2024075704A1 (ja) 2024-04-11
JPWO2024075704A1 (https=) 2024-04-11
KR102877889B1 (ko) 2025-10-28
TWI897049B (zh) 2025-09-11
JP2025023273A (ja) 2025-02-14
KR20250160213A (ko) 2025-11-11
TW202426701A (zh) 2024-07-01
KR20250054114A (ko) 2025-04-22

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