KR20250160213A - 반도체용 처리액 - Google Patents
반도체용 처리액Info
- Publication number
- KR20250160213A KR20250160213A KR1020257035452A KR20257035452A KR20250160213A KR 20250160213 A KR20250160213 A KR 20250160213A KR 1020257035452 A KR1020257035452 A KR 1020257035452A KR 20257035452 A KR20257035452 A KR 20257035452A KR 20250160213 A KR20250160213 A KR 20250160213A
- Authority
- KR
- South Korea
- Prior art keywords
- ion
- ions
- treatment solution
- less
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H01L21/32134—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2022-159584 | 2022-10-03 | ||
| JP2022159584 | 2022-10-03 | ||
| PCT/JP2023/035958 WO2024075704A1 (ja) | 2022-10-03 | 2023-10-02 | 半導体用処理液 |
| KR1020257010612A KR102877889B1 (ko) | 2022-10-03 | 2023-10-02 | 반도체용 처리액 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257010612A Division KR102877889B1 (ko) | 2022-10-03 | 2023-10-02 | 반도체용 처리액 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20250160213A true KR20250160213A (ko) | 2025-11-11 |
Family
ID=90608159
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257035452A Pending KR20250160213A (ko) | 2022-10-03 | 2023-10-02 | 반도체용 처리액 |
| KR1020257010612A Active KR102877889B1 (ko) | 2022-10-03 | 2023-10-02 | 반도체용 처리액 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257010612A Active KR102877889B1 (ko) | 2022-10-03 | 2023-10-02 | 반도체용 처리액 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250084309A1 (https=) |
| JP (2) | JP7600466B2 (https=) |
| KR (2) | KR20250160213A (https=) |
| TW (1) | TWI897049B (https=) |
| WO (1) | WO2024075704A1 (https=) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019218436A (ja) | 2018-06-15 | 2019-12-26 | 株式会社トクヤマ | ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100980607B1 (ko) * | 2007-11-08 | 2010-09-07 | 주식회사 하이닉스반도체 | 루테늄 연마용 슬러리 및 그를 이용한 연마 방법 |
| US8211800B2 (en) * | 2010-08-23 | 2012-07-03 | Kabushiki Kaisha Toshiba | Ru cap metal post cleaning method and cleaning chemical |
| KR102022139B1 (ko) * | 2012-03-16 | 2019-09-17 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
| JP2014103179A (ja) * | 2012-11-16 | 2014-06-05 | Fujifilm Corp | 半導体基板のエッチング液、これを用いたエッチング方法及び半導体素子の製造方法 |
| JP2016139774A (ja) * | 2015-01-23 | 2016-08-04 | 富士フイルム株式会社 | パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液 |
| CN111684570B (zh) * | 2018-01-16 | 2024-02-27 | 株式会社德山 | 含有次氯酸根离子的半导体晶圆的处理液 |
| CN111684575B (zh) * | 2018-02-05 | 2023-09-29 | 富士胶片株式会社 | 药液、药液的制造方法、基板的处理方法 |
| JP7050184B2 (ja) * | 2019-09-27 | 2022-04-07 | 株式会社トクヤマ | ルテニウムの半導体用処理液及びその製造方法 |
| JP6874231B1 (ja) * | 2019-09-27 | 2021-05-19 | 株式会社トクヤマ | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
| WO2021210310A1 (ja) * | 2020-04-16 | 2021-10-21 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | 処理液、化学的機械的研磨方法、半導体基板の処理方法 |
| JP7375032B2 (ja) * | 2020-08-07 | 2023-11-07 | 株式会社トクヤマ | 半導体ウエハ用処理液 |
| JP2022099242A (ja) * | 2020-12-22 | 2022-07-04 | 東京応化工業株式会社 | 精製オルト過ヨウ素酸水溶液の製造方法、半導体素子の製造方法及びオルト過ヨウ素酸水溶液 |
-
2023
- 2023-10-02 US US18/707,255 patent/US20250084309A1/en active Pending
- 2023-10-02 KR KR1020257035452A patent/KR20250160213A/ko active Pending
- 2023-10-02 KR KR1020257010612A patent/KR102877889B1/ko active Active
- 2023-10-02 WO PCT/JP2023/035958 patent/WO2024075704A1/ja not_active Ceased
- 2023-10-02 JP JP2024515144A patent/JP7600466B2/ja active Active
- 2023-10-03 TW TW112137896A patent/TWI897049B/zh active
-
2024
- 2024-12-04 JP JP2024211777A patent/JP2025023273A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019218436A (ja) | 2018-06-15 | 2019-12-26 | 株式会社トクヤマ | ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20250084309A1 (en) | 2025-03-13 |
| WO2024075704A1 (ja) | 2024-04-11 |
| JP7600466B2 (ja) | 2024-12-16 |
| JPWO2024075704A1 (https=) | 2024-04-11 |
| KR102877889B1 (ko) | 2025-10-28 |
| TWI897049B (zh) | 2025-09-11 |
| JP2025023273A (ja) | 2025-02-14 |
| TW202426701A (zh) | 2024-07-01 |
| KR20250054114A (ko) | 2025-04-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A16 | Divisional, continuation or continuation in part application filed |
Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A16-DIV-PA0104 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| PA0104 | Divisional application for international application |
St.27 status event code: A-0-1-A10-A16-div-PA0104 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| Q12 | Application published |
Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |