TWI897049B - 半導體用處理液 - Google Patents

半導體用處理液

Info

Publication number
TWI897049B
TWI897049B TW112137896A TW112137896A TWI897049B TW I897049 B TWI897049 B TW I897049B TW 112137896 A TW112137896 A TW 112137896A TW 112137896 A TW112137896 A TW 112137896A TW I897049 B TWI897049 B TW I897049B
Authority
TW
Taiwan
Prior art keywords
ions
ion
mass
concentration
processing liquid
Prior art date
Application number
TW112137896A
Other languages
English (en)
Chinese (zh)
Other versions
TW202426701A (zh
Inventor
鈴木雄山
吉川由樹
佐藤伴光
Original Assignee
日商德山股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商德山股份有限公司 filed Critical 日商德山股份有限公司
Publication of TW202426701A publication Critical patent/TW202426701A/zh
Application granted granted Critical
Publication of TWI897049B publication Critical patent/TWI897049B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
TW112137896A 2022-10-03 2023-10-03 半導體用處理液 TWI897049B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-159584 2022-10-03
JP2022159584 2022-10-03

Publications (2)

Publication Number Publication Date
TW202426701A TW202426701A (zh) 2024-07-01
TWI897049B true TWI897049B (zh) 2025-09-11

Family

ID=90608159

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112137896A TWI897049B (zh) 2022-10-03 2023-10-03 半導體用處理液

Country Status (5)

Country Link
US (1) US20250084309A1 (https=)
JP (2) JP7600466B2 (https=)
KR (2) KR20250160213A (https=)
TW (1) TWI897049B (https=)
WO (1) WO2024075704A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201934805A (zh) * 2018-02-05 2019-09-01 日商富士軟片股份有限公司 藥液、藥液的製造方法、基板的處理方法
TW202208323A (zh) * 2020-08-07 2022-03-01 日商德山股份有限公司 半導體晶圓用處理液

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100980607B1 (ko) * 2007-11-08 2010-09-07 주식회사 하이닉스반도체 루테늄 연마용 슬러리 및 그를 이용한 연마 방법
US8211800B2 (en) * 2010-08-23 2012-07-03 Kabushiki Kaisha Toshiba Ru cap metal post cleaning method and cleaning chemical
KR102022139B1 (ko) * 2012-03-16 2019-09-17 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP2014103179A (ja) * 2012-11-16 2014-06-05 Fujifilm Corp 半導体基板のエッチング液、これを用いたエッチング方法及び半導体素子の製造方法
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液
CN111684570B (zh) * 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
JP6901998B2 (ja) 2018-06-15 2021-07-14 株式会社トクヤマ ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物
JP7050184B2 (ja) * 2019-09-27 2022-04-07 株式会社トクヤマ ルテニウムの半導体用処理液及びその製造方法
JP6874231B1 (ja) * 2019-09-27 2021-05-19 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
WO2021210310A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 処理液、化学的機械的研磨方法、半導体基板の処理方法
JP2022099242A (ja) * 2020-12-22 2022-07-04 東京応化工業株式会社 精製オルト過ヨウ素酸水溶液の製造方法、半導体素子の製造方法及びオルト過ヨウ素酸水溶液

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201934805A (zh) * 2018-02-05 2019-09-01 日商富士軟片股份有限公司 藥液、藥液的製造方法、基板的處理方法
TW202208323A (zh) * 2020-08-07 2022-03-01 日商德山股份有限公司 半導體晶圓用處理液

Also Published As

Publication number Publication date
US20250084309A1 (en) 2025-03-13
WO2024075704A1 (ja) 2024-04-11
JP7600466B2 (ja) 2024-12-16
JPWO2024075704A1 (https=) 2024-04-11
KR102877889B1 (ko) 2025-10-28
JP2025023273A (ja) 2025-02-14
KR20250160213A (ko) 2025-11-11
TW202426701A (zh) 2024-07-01
KR20250054114A (ko) 2025-04-22

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