WO2024075704A1 - 半導体用処理液 - Google Patents

半導体用処理液 Download PDF

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Publication number
WO2024075704A1
WO2024075704A1 PCT/JP2023/035958 JP2023035958W WO2024075704A1 WO 2024075704 A1 WO2024075704 A1 WO 2024075704A1 JP 2023035958 W JP2023035958 W JP 2023035958W WO 2024075704 A1 WO2024075704 A1 WO 2024075704A1
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ions
ion
processing solution
semiconductor processing
concentration
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PCT/JP2023/035958
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English (en)
French (fr)
Japanese (ja)
Inventor
雄山 鈴木
由樹 吉川
伴光 佐藤
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Tokuyama Corp
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Tokuyama Corp
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Priority to US18/707,255 priority Critical patent/US20250084309A1/en
Priority to KR1020257010612A priority patent/KR102877889B1/ko
Priority to KR1020257035452A priority patent/KR20250160213A/ko
Priority to JP2024515144A priority patent/JP7600466B2/ja
Publication of WO2024075704A1 publication Critical patent/WO2024075704A1/ja
Priority to JP2024211777A priority patent/JP2025023273A/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Definitions

  • the present invention relates to semiconductor processing solutions used in metal wiring processing during the manufacturing process of semiconductor devices.
  • wiring layers are formed for the purpose of extracting electrical signals generated by transistors to the outside.
  • Semiconductor elements are becoming smaller every year, and if materials with low electromigration resistance or high resistance are used, this leads to a decrease in the reliability of the semiconductor element and an impairment of high-speed operation. Therefore, wiring materials with high electromigration resistance and low resistance are desired.
  • Forming a wiring layer on a semiconductor element includes a process for processing the wiring material, and this process uses dry or wet etching.
  • Patent Document 1 additives capable of suppressing deterioration of the surface state after etching are studied.
  • a certain amount of chlorite ions is added to the hypochlorite ions in the treatment solution used for etching. It is said that the addition of chlorite ions makes it possible to control the redox potential, and is effective for the smoothness of the surface state of the metal wiring after treatment.
  • the present inventors have investigated the removability of transition metal-containing materials and the stability of the etching rate using the method disclosed in Patent Document 1, and have found that although the method has excellent dissolving ability, the smoothness of the treated area is insufficient, and hypochlorite ions react with chlorite ions, causing the hypochlorite ions to decompose, resulting in an insufficient stability of the etching rate and requiring further improvement.
  • a stable etching rate for transition metal-containing substances is required.
  • an object of the present invention is to provide a treatment liquid that has excellent dissolving ability for transition metal-containing substances, can achieve excellent smoothness, and has a stable etching rate.
  • a semiconductor treatment liquid that contains at least one halogen oxygen acid ion selected from the group consisting of hypobromite ions, hypochlorite ions, and periodate ions, at least one ion selected from the group consisting of bromide ions, bromite ions, bromate ions, chloride ions, chlorate ions, iodate ions, iodide ions, and triiodide ions, and at least one metal selected from the group consisting of Ca, Na, and K.
  • halogen oxygen acid ion selected from the group consisting of hypobromite ions, hypochlorite ions, and periodate ions
  • at least one ion selected from the group consisting of bromide ions, bromite ions, bromate ions, chloride ions, chlorate ions, iodate ions, iodide ions, and triiodide ions at least one metal selected from the group consisting of Ca, Na, and K.
  • the smoothness of the treated area is maintained, and by containing at least one ion selected from the group consisting of bromide ions, bromite ions, bromate ions, chloride ions, chlorate ions, iodate ions, iodide ions, and triiodide ions, the etching rate of the treatment liquid is stable, and the present invention has been completed. That is, the configuration of the present invention is as follows.
  • a semiconductor processing solution used for removing transition metal-containing substances on a substrate comprising: the semiconductor processing solution contains at least one halogen oxygen acid ion selected from the group consisting of hypobromite ions, hypochlorite ions, and periodate ions; at least one ion selected from the group consisting of bromide ion, bromite ion, bromate ion, chloride ion, chlorate ion, iodate ion, iodide ion, and triiodide ion; A semiconductor processing solution comprising at least one metal selected from the group consisting of Ca, Na, K, Cr, Ni, and Al, and having a concentration of any one of Ca, Na, K, Cr, Ni, and Al of 0.1 ppt by mass or more and 200 ppt by mass or less.
  • Item 2 In the semiconductor processing solution, the ratio of the concentration of any one of bromide ions, bromite ions, bromate ions, chloride ions, and chlorate ions to the concentration of any one of metals Ca, Na, K, Cr, Ni, and Al is 1 or more and 1 x 108 or less; Item 2.
  • the semiconductor processing solution according to Item 1 further comprising hypobromite ions.
  • Item 3. The semiconductor processing solution according to item 1 or 2, wherein the metal is Ca, Na, or K.
  • Item 4 The semiconductor processing solution, At least one ion selected from the group consisting of bromide ions, bromite ions, and bromate ions; At least one metal selected from the group consisting of Ca, Na, and K; Item 2.
  • the semiconductor processing solution according to item 1 which contains hypobromite ions.
  • Item 5 The semiconductor processing solution according to item 3 or 4, wherein the pH of the semiconductor processing solution is 10.0 or more and 13.0 or less.
  • Item 6 The semiconductor processing solution contains bromate ions, Item 5.
  • Item 7 The semiconductor processing solution contains at least one ion selected from the group consisting of bromide ions, bromite ions, and bromate ions, 5.
  • the semiconductor processing solution according to item 3 or 4 wherein the ratio of the concentration of bromide ions, bromite ions, or bromate ions to the total concentration of Cr, Ni, and Al is 1 or more and 1 x 10 8 or less.
  • the ratio of the concentration of any one of chloride ions or chlorate ions to the concentration of any one of metals Ca, Na, K, Cr, Ni, or Al is 1 or more and 1 x 10 8 or less; Item 2.
  • the semiconductor processing solution comprises: At least one ion selected from the group consisting of chloride ions and chlorate ions; At least one metal selected from the group consisting of Ca, Na, and K; Item 2.
  • Item 10. The semiconductor processing solution according to item 8 or 9, wherein the pH of the semiconductor processing solution is 10.0 or more and 13.0 or less.
  • Item 11 The semiconductor processing solution contains chlorate ions, Item 10.
  • Item 12 The semiconductor processing solution contains chloride ions, Item 10.
  • the ratio of the concentration of any one of iodate ions, iodide ions, and triiodide ions to the concentration of any one of metals Ca, Na, K, Cr, Ni, and Al is 1 or more and 1 x 10 8 or less;
  • the semiconductor processing solution according to Item 1 further comprising periodate ions.
  • the semiconductor processing solution comprises: at least one ion selected from the group consisting of iodate ion, iodide ion, and triiodide ion; At least one metal selected from the group consisting of Ca, Na, and K; Item 2.
  • the semiconductor processing solution according to item 1 which contains periodate ions.
  • Item 15 The semiconductor processing solution according to item 13 or 14, wherein the pH of the semiconductor processing solution is 8.5 or more and 11.0 or less.
  • Item 16 The semiconductor processing solution contains iodate ions, Item 16.
  • the semiconductor processing liquid contains iodide ions, Item 16.
  • the present invention by adding a certain type of metal and a certain type of ion, preferably at a specific concentration or concentration ratio, it is possible to provide a semiconductor processing solution that has excellent smoothness for the treated area containing transition metals and can provide a stable etching rate.
  • FIG. 1 is a diagram showing an outline of equipment used in an etching process in a method for manufacturing semiconductor devices.
  • the semiconductor processing solution of the present embodiment is characterized by containing a target mixture described below.
  • the semiconductor processing solution of the present invention is also referred to as a processing solution.
  • the target mixture is a mixture in which a specific ion and a specific metal are present.
  • the specific ion is an ion including at least one ion selected from the group consisting of bromide ion, bromite ion, bromate ion, chloride ion, chlorate ion, iodate ion, iodide ion, and triiodide ion, and a halogen oxygen acid ion described below.
  • the specific metal is at least one metal selected from the group consisting of Ca, Na, K, Cr, Ni, and Al.
  • the smoothness of the substrate surface and the stability of the etching rate (also referred to simply as "stability" in this specification) can be maintained, although the mechanism is not clear.
  • the smoothness and the stability of the etching rate are believed to be due to the difference in the surface oxidation state of the transition metal-containing material on the wafer.
  • the semiconductor wafer preferably contains at least one transition metal selected from Ru, Rh, Ti, Ta, Co, Cr, Hf, Os, Pt, Ni, Mn, Cu, Zr, La, Mo, and W, and Ru, Mo, and W are more preferable. It is believed that by using the treatment solution of this embodiment, the target mixture is adsorbed onto the surface of the transition metal-containing material, and the oxidation state is adjusted, thereby maintaining the smoothness of the substrate surface and the stability of the etching rate.
  • the specific metals mentioned above are substances that are usually contained as impurities in semiconductor processing solutions. If these metal particles remain on fine metal wiring, they can cause short circuits and have a significant impact on semiconductor elements. For this reason, it has been thought that the less metal elements there are in the processing solution, the better.
  • JP 2019-142788 A and JP 2017-169832 A show that the amount of metal in the processing solution and the amount of metal on the wafer do not necessarily correlate. Therefore, it is thought that adding a small amount of metal is unlikely to cause effects such as short circuits caused by metal particles.
  • the treatment solution of the present embodiment contains at least one halogen oxygen acid ion selected from the group consisting of hypobromite ions, hypochlorite ions, and periodate ions.
  • the halogen oxygen acid ions function as an oxidizing agent.
  • the concentration of the halogen oxygen acid ions is not particularly limited as long as it does not deviate from the object of the present invention, but is preferably 50 ppm by mass or more and 35.0% by mass or less.
  • hypobromite ions or hypochlorite ions are selected as the halogen oxygen acid ions contained in the treatment solution of this embodiment is not particularly limited, but from the viewpoint of being able to dissolve transition metals, the content is preferably 50 ppm by mass or more and 5.0% by mass or less, more preferably 500 ppm by mass or more and 2.0% by mass or less, and even more preferably 500 ppm by mass or more and 5,000 ppm by mass or less, relative to the total mass of the treatment solution.
  • periodate ions are selected as the halogen oxygen acid ions contained in the treatment liquid of this embodiment, although there is no particular limitation, orthoperiodate ions or metaperiodate ions are preferred from the viewpoint of being able to dissolve transition metals. Furthermore, salts of orthoperiodate and metaperiodate may be used since they are ionized by dissolving in water. In particular, orthoperiodate ions are more preferred from the viewpoint of not containing Na and the like and being a stable composition. In view of the solubility of the treatment liquid, the content of periodate ions is preferably from 0.5% by mass to 35.0% by mass, and more preferably from 2.0% by mass to 8.0% by mass, based on the total mass of the treatment liquid.
  • the halogen oxygen acid ions contained in the treatment solution of this embodiment may be one type or two or more types.
  • the inclusion of multiple types may stabilize the etching rate and improve the stability during reuse.
  • hypobromite ions are contained in the first type of halogen oxygen acid ions
  • bromide ions are generated as consumption by oxidation or decomposition by disproportionation progresses.
  • a decrease in the concentration of halogen oxygen acid ions causes a decrease in the etching rate.
  • the treatment solution contains hypochlorite ions as the second type of halogen oxygen acid ions, the generated bromide ions can be oxidized and converted to hypobromite ions, which makes it easier to stabilize the etching rate.
  • hypochlorite ions coexist.
  • concentration of hypochlorite ions is not limited as long as it does not deviate from the gist of the present invention, but is preferably 50 mass ppm or more and 5 mass % or less. If the concentration of hypochlorite ions is less than 50 mass ppm, for example, Br 2 - cannot be efficiently oxidized, and the etching rate of ruthenium and the like decreases.
  • the concentration of hypochlorite ions is preferably 50 mass ppm or more and 5 mass % or less, more preferably 500 mass ppm or more and 2 mass %, and even more preferably 500 mass ppm or more and 5000 mass ppm or less.
  • the treatment liquid of this embodiment contains a target mixture.
  • the target mixture also contains specific ions.
  • the specific ions contained in the treatment liquid of this embodiment include at least one ion selected from the group consisting of bromide ions, bromite ions, bromate ions, chloride ions, and chlorate ions, iodate ions, iodide ions, and triiodide ions, and halogen oxygen acid ions.
  • the halogen oxygen acid ions are at least one halogen oxygen acid ions selected from the group consisting of hypobromite ions, hypochlorite ions, and periodate ions.
  • Bromide ions can be added to the treatment liquid by, for example, bromine gas, hydrogen bromide, or a bromine salt, and the content can be adjusted by the weight of bromine gas, hydrogen bromide, or a bromine salt added to the treatment liquid.
  • Bromite ions can be contained in the treatment solution, for example, by bromous acid or bromite salts.
  • Bromite salts may be any salts as long as the cation serving as a counter to the bromite ions does not react with halogen oxygen acid ions or does not impair the present invention even if it does react, and examples of such salts include those listed below.
  • the content can be adjusted by the weight of bromous acid or bromite salts added to the treatment solution.
  • Bromate ions can be added to the treatment solution by, for example, bromic acid or a bromate salt, and the content can be adjusted by the weight of bromic acid or a bromate salt added to the treatment solution.
  • the chloride ions can be added to the treatment liquid by, for example, chlorine gas, hydrogen chloride, or a chlorine salt, and the content can be adjusted by the weight of the chlorine gas, hydrogen chloride, or a chlorine salt added to the treatment liquid.
  • the chlorate ions can be added to the treatment liquid by, for example, chloric acid or a chlorate salt, and the content can be adjusted by the weight of chloric acid or a chlorate salt added to the treatment liquid.
  • Iodate ions can be contained in the treatment liquid, for example, by an iodate salt, and the content can be adjusted by the weight of the iodate salt added to the treatment liquid.
  • Iodide ions can be added to the treatment liquid by, for example, iodine, iodine gas, hydrogen iodide, or iodine salts, and the content can be adjusted by the weight of iodine, iodine gas, hydrogen iodide, or iodine salts added to the treatment liquid.
  • Triiodide ions can be contained in the processing solution, for example, in the form of a triiodide salt, and the content can be adjusted by the weight of the triiodide salt added to the processing solution.
  • the halogen oxygen acid ions and specific ions contained in the treatment solution of this embodiment there are multiple possible combinations of the halogen oxygen acid ions and specific ions contained in the treatment solution of this embodiment, but there are preferred specific ions for each halogen oxygen acid ion.
  • a preferred specific ion for the halogen oxygen acid ion the storage stability of the treatment solution is further improved. This is thought to be to suppress the disproportionation reaction of the halogen oxygen acid ion.
  • the specific ion selected at this time may be one type or two or more types, and when two or more types are selected, the total concentration of the specific ions is preferably 0.01 mass ppt to 2 mass%, preferably 1 mass ppb to 1 mass%, and more preferably 10 mass ppb to 0.1 mass%, relative to the total mass of the treatment solution.
  • hypobromite ion is selected as the halogen oxygen acid ion
  • preferred specific ions are bromate ion, bromite ion, bromide ion, chlorate ion, chloride ion, or iodate ion, and more preferably bromate ion, bromide ion, chloride ion, or chlorate ion.
  • hypochlorite is selected as the halogen oxygen acid ion
  • preferred specific ions are chlorate, chloride, bromate, bromite, or iodate, more preferably chlorate or chloride.
  • preferred specific ions are iodate ion, iodide ion, triiodide ion, bromide ion, or chloride ion, more preferably iodate ion, iodide ion, or triiodide ion.
  • halogen oxygen acid ions there are specific ions that are preferred as the specific ions to be selected.
  • the preferred specific ions are bromate ion, bromite ion, bromide ion, chlorate ion, chloride ion, or iodate ion, and more preferably bromate ion, bromide ion, chloride ion, or chlorate ion.
  • the counter cation may be any salt as long as it does not react with the halogen oxygen acid ion or does not interfere with the present invention even if it does react.
  • chloride ions include, but are not limited to, lithium chloride, sodium chloride, potassium chloride, rubidium chloride, cesium chloride, ammonium chloride, and onium chloride.
  • the onium chloride referred to here is a compound formed from an onium ion and a chloride ion.
  • the onium ion is a polyatomic cation compound formed by adding an excess proton (hydrogen cation) to a monoatomic anion.
  • the cations include imidazolium ion, pyrrolidinium ion, pyridinium ion, piperidinium ion, ammonium ion, phosphonium ion, fluoronium ion, chloronium ion, bromonium ion, iodonium ion, oxonium ion, sulfonium ion, selenonium ion, telluronium ion, arsonium ion, stibonium ion, and bismuthonium ion.
  • the salt a salt formed with an onium ion is preferred, and a compound containing a hydrogen ion is more preferred, since the amount of metal in the treatment liquid is not changed.
  • the content of the specific ion is preferably 0.01 mass ppt to 2 mass %, more preferably 1 mass ppb to 1 mass %, and more preferably 10 mass ppb to 0.1 mass %, based on the total mass of the treatment liquid. This concentration range can be applied to any of the specific ions described above.
  • the specific ions are all anions, and counter cations are present in the treatment liquid.
  • a hydrogen cation (H + ), a tetraalkylammonium cation e.g., a tetramethylammonium cation (TMA + ), a tetraethylammonium cation (TEA + ), an ethyltrimethylammonium cation (ETMA + ), or a tetrabutylammonium cation (TBA + )
  • an ammonium ion (NH 4 + ) is preferable
  • a hydrogen cation (H + ) or a tetramethylammonium cation (TMA + ) is more preferable.
  • the treatment liquid of this embodiment contains the target mixture.
  • the target mixture also contains a specific metal together with specific ions.
  • the specific metal is at least one selected from the group consisting of Ca, Na, K, Cr, Ni, and Al.
  • Ca, Na, or K which have a high ionization tendency, are preferably selected.
  • the effect on surface smoothness can be obtained in the same way as when Ca, Na, or K is contained, but when Ca, Na, or K, which have a high ionization tendency, are contained, the effect is greater.
  • the content of the specific metal is from 0.01 ppt by mass to 200 ppt by mass, preferably from 0.01 ppt by mass to 100 ppt by mass, and more preferably from 0.01 ppt by mass to 50 ppt by mass, relative to the total mass of the treatment liquid.
  • the concentrations of all the metals Na, K, and Ca are preferably 0.01 mass ppt or more and 200 mass ppt or less. Furthermore, among the above metals, the total concentration of all the metals Na, K, and Ca is 0.01 mass ppt or more and 600 mass ppt or less, preferably 0.01 mass ppt or more and 300 mass ppt or less, and more preferably 0.01 mass ppt or more and 150 mass ppt or less, relative to the total mass of the treatment liquid.
  • the total concentration of all metals, Cr, Ni, and Al, relative to the total mass of the treatment solution is 0.01 ppt by mass or more and 600 ppt by mass or less, preferably 0.01 ppt by mass or more and 300 ppt by mass or less, and more preferably 0.01 ppt by mass or more and 150 ppt by mass or less.
  • the concentration ratio of the specific ion to each specific metal is preferably 1 or more and 1 ⁇ 10 8 or less.
  • the treatment liquid of the present embodiment may contain Fe, Zn, or Cu.
  • each of these metals is 0.01 mass ppt to 200 mass ppt, preferably 0.01 mass ppt to 100 mass ppt, and more preferably 0.01 mass ppt to 50 mass ppt, relative to the total mass of the treatment liquid.
  • the treatment liquid shown in the specific example below contains at least one selected from the group consisting of Ca, Na, K, Cr, Ni, and Al.
  • the ratio of the concentration of any one of bromide ions, bromite ions, bromate ions, chloride ions, and chlorate ions to the concentration of any one of metals Ca, Na, K, Cr, Ni, and Al is preferably 1 to 1 ⁇ 10 8.
  • the upper limit of the concentration ratio is preferably 2.4 ⁇ 10 7 , and more preferably 1 ⁇ 10 5 .
  • the ratio of the ion concentration of any one of bromide ions, bromite ions, and bromate ions to the total concentration of Ca, Na, and K in the treatment solution of the second specific example of this embodiment is preferably 1 or more and 1 x 10 8.
  • the upper limit of the concentration ratio is preferably 2.4 x 10 7 , and more preferably 1 x 10 5.
  • the treatment solution contains all of Ca, Na, and K.
  • the pH of the semiconductor processing solution is preferably 10.0 or more and 13.0 or less.
  • the treatment liquid in the third specific example of this embodiment preferably contains bromate ions, and the ratio of the concentration of bromate ions to the total concentration of Ca, Na, and K is 1 or more and 1 x 10 8 or less.
  • the upper limit of the concentration ratio is preferably 9.7 x 10 6 , and more preferably 1 x 10 5.
  • the treatment liquid contains all of Ca, Na, and K.
  • the fourth treatment liquid of the present embodiment contains at least one type of ion selected from the group consisting of bromide ions, bromite ions, and bromate ions,
  • the ratio of the concentration of bromide ions, bromite ions, or bromate ions to the total concentration of Cr, Ni, and Al is preferably 1 to 1 x 10 8.
  • the upper limit of the concentration ratio is preferably 6.0 x 10 5 , and more preferably 5.0 x 10 5.
  • the treatment liquid preferably contains all of Cr, Ni, and Al.
  • the ratio of the ion concentration of any one of chloride ions or chlorate ions to the concentration of any one of metals Ca, Na, K, Cr, Ni, and Al is preferably 1 to 1 ⁇ 10 8.
  • the upper limit of the concentration ratio is preferably 2.3 ⁇ 10 6 , and more preferably 1 ⁇ 10 5 .
  • the treatment liquid of the sixth specific example of this embodiment preferably contains at least one type of ion selected from the group consisting of chloride ions and chlorate ions, at least one type of metal selected from the group consisting of Ca, Na, and K, and hypochlorite ions.
  • the ratio of the ion concentration of either chloride ion or chlorate ion to the total concentration of Ca, Na, and K is preferably 1 or more and 1 x 10 8 or less.
  • the upper limit of the concentration ratio is preferably 2.3 x 10 6 , and more preferably 1 x 10 5.
  • the treatment liquid contains all of Ca, Na, and K.
  • the pH of the treatment liquid in the sixth and seventh specific examples is preferably 10.0 or more and 13.0 or less.
  • the treatment liquid of the eighth specific example of this embodiment preferably contains chlorate ions, and the ratio of the concentration of chlorate ions to the total concentration of Ca, Na, and K is 1 or more and 1 x 10 8 or less.
  • the upper limit of the concentration ratio is preferably 2.6 x 10 7 , and more preferably 1 x 10 5.
  • the treatment liquid preferably contains all of Ca, Na, and K.
  • the treatment liquid of the ninth specific example of this embodiment preferably contains chloride ions, and the ratio of the concentration of chloride ions to the total concentration of Cr, Ni, and Al is from 1 to 1 x 10 8.
  • the upper limit of the concentration ratio is preferably 6.0 x 10 5 , and more preferably 5.5 x 10 5.
  • the treatment liquid contains all of Cr, Ni, and Al.
  • the ratio of the concentration of any one of iodate ions, iodide ions, and triiodide ions to the concentration of any one of metals Ca, Na, K, Cr, Ni, and Al is from 1 to 1 ⁇ 10 8 , and the treatment solution preferably contains periodate ions.
  • the upper limit of the concentration ratio is preferably 1.8 ⁇ 10 7 , and more preferably 1 ⁇ 10 5 .
  • the treatment liquid of an eleventh specific example of this embodiment preferably contains at least one type of ion selected from the group consisting of iodate ions, iodide ions, and triiodide ions, at least one type of metal selected from the group consisting of Ca, Na, and K, and periodate ions.
  • the concentration of any one of iodate ions, iodide ions, and triiodide ions is preferably 1 ppb by mass or more and 1% by mass or less.
  • the pH of the treatment liquid in the tenth and eleventh specific examples is preferably 8.5 or more and 11.0 or less.
  • the ratio of the concentration of iodate ions to the total concentration of Ca, Na, and K is preferably 1 or more and 1 x 10 8 or less.
  • the upper limit of the concentration ratio is preferably 1.9 x 10 7 , and more preferably 1 x 10 5 .
  • the treatment liquid in a thirteenth specific example of this embodiment preferably contains iodide ions, and the ratio of the concentration of iodide ions to the total concentration of Cr, Ni, and Al is 1 or more and 1 x 10 8 or less.
  • the upper limit of the concentration ratio is preferably 5.5 x 10 5 , and more preferably 5.0 x 10 5. In this specific example, it is preferable that the treatment liquid contains all of Cr, Ni, and Al.
  • the pH of the treatment liquid of this embodiment is preferably 8.5 to 13.0. Within this range, there is a preferred pH range depending on the halogen oxygen acid ion selected. Specifically, this is as explained in each aspect above. The reason why there is a preferred pH range is that if the pH is too low, the storage stability of the halogen oxygen acid ion deteriorates, and if the pH is too high, the etching rate for transition metals slows down. Storage stability is an evaluation of the change in concentration of the halogen oxygen acid ion when the treatment liquid is stored for a long period of time.
  • the pH is preferably 8.5 to 11.0, and more preferably 9.0 to 10.0, from the viewpoints of dissolving ability, smoothness, storage stability, and etching rate stability.
  • the pH is preferably 10.0 to 13.0, and more preferably 12.0 to 12.6.
  • the treatment liquid of this embodiment may contain other additives that have been used in semiconductor treatment liquids in the past, as long as the purpose of the present invention is not impaired.
  • additives for example, acids, metal anticorrosives, water-soluble organic solvents, fluorine compounds, reducing agents, complexing agents, chelating agents, surfactants, defoamers, pH adjusters, stabilizers, etc. may be added. These additives may be added alone or in combination.
  • an acid or alkali can be added to the treatment solution of this embodiment.
  • the alkali it is preferable to use an organic alkali, since it does not contain metal ions that are problematic in semiconductor manufacturing.
  • the organic alkali is preferably tetraalkylammonium hydroxide, and more preferably tetramethylammonium hydroxide, since it has a large number of hydroxide ions per unit weight and high-purity products are easily available.
  • the water contained in the treatment solution of this embodiment is preferably water from which metal ions, organic impurities, particle particles, etc. have been removed by distillation, ion exchange treatment, filtration, various adsorption treatments, etc., and pure water or ultrapure water is particularly preferable.
  • Such water can be obtained by known methods that are widely used in semiconductor manufacturing.
  • the temperature when etching ruthenium using the semiconductor processing solution of this embodiment is not particularly limited, but may be determined in consideration of the etching rate of ruthenium, the amount of RuO4 gas generated, etc.
  • the processing temperature is high, the amount of RuO4 gas increases and the stability of the halogen oxygen acid ion also decreases.
  • the etching rate tends to decrease as the temperature decreases.
  • the temperature for etching ruthenium is preferably 10°C to 90°C, more preferably 15°C to 60°C, and most preferably 25°C to 45°C.
  • the treatment liquid of this embodiment is preferably stored at low temperature and/or protected from light. Storing the treatment liquid at low temperature and/or protected from light is expected to have the effect of suppressing decomposition of the oxidizing agent in the treatment liquid. Furthermore, storing the treatment liquid in a container filled with an inert gas and preventing the inclusion of carbon dioxide can maintain the stability of the treatment liquid. Furthermore, the inner surface of the container, i.e., the surface that comes into contact with the treatment liquid, is preferably made of glass or an organic polymer material. This is because if the inner surface of the container is made of glass or an organic polymer material, the inclusion of impurities such as metals, metal oxides, and organic substances can be further reduced.
  • the treatment liquid of this embodiment may contain onium ions as a filtration lubricant. If the surface tension of the filtration lubricant is low, it may be removed in the filtration process, so the surface tension of the filtration lubricant is preferably 60 mN/m or more and 75 mN/m or less.
  • the onium ions interact with the metal surface of the semiconductor wafer, making it possible to suppress roughness of the metal surface.
  • the onium ions interact with RuO 4 - and RuO 4 2- , etc., which are generated during etching of ruthenium, making it possible to suppress the generation of RuO 4 gas and RuO 2 particles generated concomitantly.
  • the onium ion contained in the filtration lubricant used in this embodiment plays various roles, but in order to maintain these effects at a high level, the surface tension of the filtration lubricant is the key.That is, if the surface tension of the filtration lubricant is less than 60 mN/m, the onium ion contained in the filtration lubricant is easily removed by the filtration process, making it difficult to maintain the good surface smoothness and RuO4 gas suppression effect described above.
  • One method for increasing the surface tension is to add a large amount of salt, but when the filtration lubricant used in this embodiment contains an oxidizing agent described later, the stability of the oxidizing agent may decrease due to the reaction between the salt and the oxidizing agent, or etching may be inhibited due to high concentration of salt.For these reasons, the surface tension is preferably 75 mN/m or less.
  • the filtration step will be described.
  • the adhesion of particles to the wafers leads to a decrease in yield, so the treatment liquid is filtered in order to remove particles from the treatment liquid.
  • the wiring width is very fine, ranging from a few nm to a few tens of nm, and therefore the pore size of the filter used in the filtration step is required to be of a similar size.
  • the smaller the pore size of the filter the easier it is for the onium salt or onium ion to be adsorbed and removed. This reduces the onium ion concentration in the treatment liquid, impairing the function of the treatment liquid described above.
  • the surface tension of the filtration lubricant is about 73 mN/m at 25°C, and by approaching this value, it is possible to suppress the adsorption of onium salts or onium ions to the filter. That is, by controlling the surface tension of the filtration lubricant to 60 mN/m or more and 75 mN/m or less, the adsorption of onium salts or onium ions to the filter can be suppressed, and the filtration lubricant can be used as a processing liquid without losing its function.
  • the surface tension is 60 mN/m or more and 75 mN/m or less, preferably 68 mN/m or more and 75 mN/m or less, and most preferably 71 mN/m or more and 73 mN/m or less.
  • the surface tension in this specification is a value at 25°C.
  • Onium ion The surface tension is affected by the onium ion used as the filtration lubricant in this embodiment. Therefore, by appropriately selecting the type and concentration of the onium ion, it is possible to maintain the surface tension within an appropriate range. In order to maintain the surface tension within a preferred range, it is preferable to select one or more types selected from the group consisting of onium ions having structures represented by the following formulas (1) to (6).
  • R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are independently an alkyl group having 2 to 9 carbon atoms, an allyl group, an aralkyl group having an alkyl group having 1 to 9 carbon atoms, or an aryl group.
  • At least one hydrogen atom in the aryl group in the aralkyl group and in the ring of the aryl group may be replaced by fluorine, chlorine, an alkyl group having 1 to 9 carbon atoms, an alkenyl group having 2 to 9 carbon atoms, an alkoxy group having 1 to 9 carbon atoms, or an alkenyloxy group having 2 to 9 carbon atoms, and in these groups, at least one hydrogen atom may be replaced by fluorine, chlorine, bromine or iodine.
  • Examples of counter anions to the above onium ions include fluoride ion, chloride ion, bromide ion, iodide ion, hydroxide ion, nitrate ion, phosphate ion, sulfate ion, hydrogen sulfate ion, methanesulfate ion, perchlorate ion, chlorate ion, chlorite ion, hypochlorite ion, orthoperiodate ion, metaperiodate ion, iodate ion, iodite ion, hypoiodite ion, acetate ion, carbonate ion, hydrogen carbonate ion, fluoroborate ion, and trifluoroacetate ion.
  • A is an ammonium ion or a phosphonium ion.
  • Z is an aromatic group or an alicyclic group which may contain nitrogen, sulfur or oxygen atoms, and in the aromatic group or the alicyclic group, carbon or nitrogen may have chlorine, bromine, fluorine, iodine, at least one alkyl group having 1 to 9 carbon atoms, at least one alkenyloxy group having 2 to 9 carbon atoms, an aromatic group which may be substituted with at least one alkyl group having 1 to 9 carbon atoms, or an alicyclic group which may be substituted with at least one alkyl group having 1 to 9 carbon atoms.
  • R is chlorine, bromine, fluorine, iodine, an alkyl group having 1 to 9 carbon atoms, an allyl group, an aromatic group which may be substituted with at least one alkyl group having 1 to 9 carbon atoms, or an alicyclic group which may be substituted with at least one alkyl group having 1 to 9 carbon atoms.
  • n is an integer of 1 or 2 and indicates the number of R. When n is 2, R may be the same or different and may form a ring.
  • a is an integer from 1 to 10.
  • the carbon number of the hydrocarbon group is preferably within the above-mentioned range.
  • the concentration of the onium ion in the treatment liquid of this embodiment is preferably 1 mass ppm or more and 10,000 mass ppm or less. If the amount of onium ion added is too small, when used as a semiconductor treatment liquid for ruthenium, not only the interaction with RuO 4 - and the like is weakened, the RuO 4 gas suppression effect is reduced, but also the amount of onium ion attached to the metal surface during etching is insufficient, so that the surface smoothness tends to decrease. On the other hand, if the amount added is too large, the amount of onium ion adsorbed to the metal surface becomes excessive, and the etching rate decreases.
  • the treatment liquid of this embodiment preferably contains onium ion in an amount of 1 mass ppm or more and 10,000 mass ppm or less, more preferably 10 mass ppm or more and 5,000 mass ppm or less, and even more preferably 50 mass ppm or more and 2000 mass ppm or less.
  • onium ions when onium ions are added, only one kind may be added, or two or more kinds may be added in combination. Even when two or more kinds of onium ions are included, the generation of RuO4 gas can be effectively suppressed as long as the total concentration of the onium ions is within the above concentration range.
  • onium ions examples include chlorocholine ion, trans-2-butene 1,4-bis(triphenylphosphonium ion), 1-hexyl-3-methylimidazolium ion, allyltriphenylphosphonium ion, tetraphenylphosphonium ion, benzyltriphenylphosphonium ion, methyltriphenylphosphonium ion, (2-carboxyethyl)triphenylphosphonium ion, (3-carboxypropyl)triphenylphosphonium ion, (4-carboxybutyl)triphenylphosphonium ion, (5-carboxypentyl)triphenylphosphonium ion, cinnamyltriphenylphosphonium ion, (2-hydroxybenzyl)triphenylphosphonium ion, (1-naphthylmethyl)triphenylphosphonium ion, butyltriphen
  • the effects of onium ions include suppression of surface roughness during etching and suppression of RuO 4 gas (when etching ruthenium), but in addition to this, they also have the effect of improving the number of times of reuse when used as a semiconductor processing solution.
  • metals dissolve into the processing solution, so the composition of the processing solution differs before and after use. Taking the etching of ruthenium with halogen oxygen acid ions such as hypobromite ions as an example, ruthenium dissolves as RuO 4 - under alkaline conditions.
  • the stability during reuse may be improved. That is, when etching ruthenium, RuO 4 - or the like actively reacts with onium ions, making it possible to suppress the reaction of RuO 4 - or the like with halogen oxygen acid ions such as hypobromite ions.
  • halogen oxygen acid ions such as hypobromite ions.
  • an onium ion that can be used for such a purpose a phosphonium ion is preferable.
  • ammonium ions there is a concern that amines may be generated by reaction with halogen oxygen acid ions such as hypobromite ions, and this amine may decompose halogen oxygen acid ions such as hypobromite ions.
  • phosphonium ions generally have a larger molecular size than ammonium ions and are more likely to form ion pairs with RuO 4 - generated by dissolution, so that binding RuO 4 - can also have the effect of suppressing the reaction of RuO 4 - with halogen oxygen acid ions such as hypobromite ions.
  • onium ions examples include allyltriphenylphosphonium ion, tetraphenylphosphonium ion, trans-2-butene-1,4-bis(triphenylphosphonium ion), benzyltriphenylphosphonium ion, tetrabutylphosphonium ion, tributylhexylphosphonium ion, heptyltriphenylphosphonium ion, cyclopropyltriphenylphosphonium ion, (bromomethyl)triphenylphosphonium ion, (chloromethyl)triphenylphosphonium ion, etc.
  • the treatment liquid of this embodiment can be used in an etching process for a semiconductor wafer.
  • the etching process includes a step of contacting a semiconductor wafer with the treatment liquid of this embodiment.
  • the treatment liquid of this embodiment when containing the above-described filter lubricant, can be preferably used as an etching liquid for semiconductor wafers.
  • the above-described conditions for the filter lubricant can be applied.
  • a wet etching process of ruthenium will be described. First, a substrate made of a semiconductor (e.g., Si) is prepared.
  • the prepared substrate is subjected to an oxidation process to form a silicon oxide film on the substrate. Then, an interlayer insulating film made of a low dielectric constant (Low- k ) film is formed, and via holes are formed at a predetermined interval. After the via holes are formed, a ruthenium film is formed by thermal CVD. By etching this ruthenium film using the processing solution of this embodiment, it is possible to form a ruthenium wiring having excellent surface smoothness in the via holes while suppressing the generation of RuO4 gas.
  • the metal contained in the semiconductor wafer may be at least one metal selected from Ru, Rh, Ti, Ta, Co, Cr, Hf, Os, Pt, Ni, Mn, Cu, Zr, La, Mo, and W.
  • ruthenium is not limited to metallic ruthenium, and may contain 70 atomic % or more of ruthenium, and also includes ruthenium alloys, oxides of ruthenium (ruthenium dioxide, ruthenium trioxide, etc.), nitrides, oxynitrides, intermetallic compounds, ionic compounds, complexes, etc.
  • the temperature when etching metals such as ruthenium (specific examples will be described later) using the treatment liquid of this embodiment is not particularly limited, but may be determined in consideration of the etching rate of metals such as ruthenium. If the treatment temperature is high, for example, when etching ruthenium, the amount of RuO4 gas increases, and the stability of the halogen oxygen acid also decreases. On the other hand, the lower the temperature, the lower the etching rate tends to be. For these reasons, the temperature for etching metals such as ruthenium is preferably 10°C to 90°C, more preferably 15°C to 60°C, and most preferably 25°C to 45°C. When the treatment liquid of this embodiment contains a filtration lubricant, the surface tension at 25°C is preferably 60 mN/m or more and 75 mN/m or less.
  • the processing liquid of this embodiment has an opportunity to pass through filters 1 and 2 or 3.
  • valve 10 in Fig. 1 is closed and valve 9 is opened, the chemical liquid in chemical cabinet 6 is filtered by passing through filters 1 and 2 by driving pump 4.
  • the filtration process of passing the chemical liquid through filters 1 and 2 may be performed multiple times.
  • the number of filters passed during one filtration process can be, for example, one or more, and may be two, three, or four or more. 1 is opened, the chemical liquid in the chemical cabinet 6 is supplied to the etching table 8 by the drive of the pump 4, and the semiconductor wafer is etched.
  • a semiconductor element can also be manufactured by carrying out known steps used in the manufacturing method of a semiconductor element, such as one or more steps selected from a wafer preparation step, an oxide film formation step, a transistor formation step, a wiring formation step, and a CMP step.
  • a rotor (AsOne, total length 30 mm x diameter 8 mm) was placed in a three-neck flask, a thermometer protection tube (Cosmos Bead, bottom-sealed type) and a thermometer were placed in one opening, a chlorine gas cylinder and a nitrogen gas cylinder were connected to the other opening, and the tip of a PFA tube (Flon Industries, F-8011-02) that was connected to a state in which chlorine gas / nitrogen gas could be switched at will was immersed in the bottom of the solution, and the remaining opening was connected to a gas washing bottle (AsOne, gas washing bottle, model number 2450 / 500) filled with 5% by mass sodium hydroxide aqueous solution.
  • a gas washing bottle (AsOne, gas washing bottle, model number 2450 / 500) filled with 5% by mass sodium hydroxide aqueous solution.
  • nitrogen gas with a carbon dioxide concentration of less than 1 ppm was flowed from the PFA tube at 0.289 Pa ⁇ m 3 / sec (at 0 ° C. conversion) for 20 minutes to expel carbon dioxide from the gas phase.
  • the carbon dioxide concentration in the gas phase was 1 ppm or less.
  • a magnetic stirrer (AsOne Corp., C-MAG HS10) was placed at the bottom of the three-neck flask and rotated and stirred at 300 rpm, and while cooling the outer periphery of the three-neck flask with ice water, chlorine gas (Fujiox Corp., specification purity 99.4%) was supplied at 0.059 Pa ⁇ m 3 /sec (at 0°C) for 180 minutes to obtain a mixed solution of tetramethylammonium hypochlorite aqueous solution (hypochlorite ion; equivalent to 3.51% by mass, 0.28 mol/L) and tetramethylammonium hydroxide (equivalent to 0.09% by mass, 0.0097 mol/L). At this time, the liquid temperature during the reaction was 11°C.
  • hypochlorite ions were selected as the halogen oxygen acid ions
  • the tetramethylammonium hypochlorite solution obtained by the above procedure was used at a predetermined concentration as a solution containing halogen oxygen acid ions.
  • hypobromite ions or hypobromite ions and hypochlorite ions
  • a predetermined amount of tetramethylammonium bromide (97% by mass, manufactured by Tokyo Chemical Industry Co., Ltd.) is added to the tetramethylammonium hypochlorite solution obtained by the above operation, and the solution is used at a predetermined concentration as a solution containing halogen oxygen acid ions.
  • periodate ions were selected as the halogen oxygen acid ions
  • a solution containing orthoperiodate ions was used at a predetermined concentration as the solution containing halogen oxygen acid ions.
  • Specific ions in the treatment solution As specific ions, chlorate ions, chloride ions, bromate ions, bromite ions, bromide ions, iodate ions, iodide ions, and triiodide ions were added at a predetermined weight to the treatment solution so that the concentrations of the specific ions were as shown in Table 1.
  • sodium chlorate manufactured by Wako Pure Chemical Industries, Ltd.
  • sodium chlorite manufactured by Wako Pure Chemical Industries, Ltd.
  • hydrogen chloride 35% by mass, manufactured by Kanto Chemical Co., Ltd.
  • sodium bromate manufactured by Wako Pure Chemical Industries, Ltd.
  • sodium bromite manufactured by Nippon Silica Industry Co., Ltd.
  • hydrogen bromide 47% by mass, manufactured by Tama Chemical Industry Co., Ltd.
  • sodium iodate manufactured by Wako Pure Chemical Industries, Ltd.
  • hydrogen iodide 55% by mass, manufactured by Wako Pure Chemical Industries, Ltd.
  • tetrabutylammonium triiodide manufactured by Sigma-Aldrich Co., Ltd.
  • the cations of sodium chlorate, sodium chlorite, sodium bromate, sodium bromite, sodium iodate, and tetrabutylammonium triiodide were exchanged for tetramethylammonium ions using an ion exchange resin.
  • the amount of each ion added was confirmed to be the specified amount by using ion chromatography (manufactured by Thermo Fisher Scientific).
  • an oxide film was formed on a silicon wafer using a batch-type thermal oxidation furnace, and ruthenium was formed on the oxide film to a thickness of 1200 ⁇ ( ⁇ 10%) using a sputtering method to obtain a ruthenium film before etching.
  • 40 mL of the treatment solution obtained above was prepared in a fluororesin container with a lid (AsOne, PFA container 94.0 mL).
  • a 10 ⁇ 10 mm ruthenium film piece on which a ruthenium film with a thickness of 1200 ⁇ was formed was immersed in a chemical solution at 35° C. for 2 minutes to obtain a ruthenium film after etching.
  • the ruthenium surface before and after etching was observed using a field emission scanning electron microscope (JSM-7800F Prime, JEOL Ltd.) to confirm the presence or absence of surface roughness, and was evaluated according to the following criteria.
  • the order of surface roughness is A to D, with A to C being acceptable levels and D being unacceptable levels.
  • D Roughness is observed over the entire surface, and the roughness is deep.
  • the treatment solution obtained above was prepared, and the stability of the etching rate was evaluated.
  • the sheet resistance was measured using a four-point probe resistance meter (Loresta-GP, manufactured by Mitsubishi Chemical Analytech Co., Ltd.) and converted into a film thickness, which was taken as the ruthenium film thickness before the etching treatment.
  • 40 mL of the treatment solution obtained above was prepared in a fluororesin container with a lid (manufactured by AsOne Co., Ltd., PFA container 94.0 mL).
  • a 10 ⁇ 10 mm ruthenium film piece on which a ruthenium film with a film thickness of 1200 ⁇ was formed was immersed in a chemical solution at 35° C.
  • the treatment liquids were rated according to the following criteria.
  • the effectiveness of the treatment liquids was ranked from A to D, with A to C being acceptable levels and D being unacceptable.
  • D Either the surface roughness evaluation or the stability evaluation includes a D.
  • hypobromite ion and hypochlorite ion concentration The hypobromite ion and hypochlorite ion concentrations were measured using an ultraviolet-visible spectrophotometer (UV-2600, manufactured by Shimadzu Corporation). A calibration curve was prepared using aqueous solutions of hypobromite ion and hypochlorite ion with known concentrations, and the hypobromite ion and hypochlorite ion concentrations in the semiconductor treatment liquid produced were determined. The hypobromite ion and hypochlorite ion concentrations were determined from the measurement data when the absorption spectrum stabilized after the treatment liquid was produced.
  • Examples 1 to 61 and Comparative Examples 1 to 12 Tests were performed for Examples 1 to 61 and Comparative Examples 1 to 12 using the method described above.
  • Tables 1 to 5 show the composition of the treatment liquid and the evaluation results.
  • the "specific ratio” shown in Tables 1 to 4 below is the ratio of the concentration of the specific ion described in the table to the total concentration of Na, K, and Ca contained in the treatment liquid.
  • the “specific ratio” shown in Table 5 below is the ratio of the concentration of the specific ion described in the table to the total concentration of Cr, Ni, and Al contained in the treatment liquid.
  • Table 5 shows the results when the metal species added in Examples 1, 19, 33, and 43 was changed from the total concentration of Na, K, and Ca to the total concentration of Cr, Ni, and Al. As shown in Table 5, the total concentration of Cr, Ni, and Al provides the same effect as the total concentration of Na, K, and Ca. However, as shown in Examples 1, 19, 33, and 43, selecting the total concentration of Na, K, and Ca provides a greater effect on surface roughness due to differences in adsorption caused by ionization tendency.
  • Examples 62 to 65> As in the ruthenium film formation method, an oxide film was first formed on a silicon wafer using a batch-type thermal oxidation furnace, and then a transition metal (W, Mo) film was formed on the oxide film to a thickness of 1200 ⁇ ( ⁇ 10%) using a sputtering method. The sheet resistance was measured using a four-point probe resistivity meter (Loresta GP, manufactured by Mitsubishi Chemical Analytech Co., Ltd.) and converted to film thickness. Using the same treatment solution as in Examples 1, 19, 33, and 43, the surface smoothness of the treated area of the transition metal film (W, Mo) obtained by the above method and the stability of the etching rate were evaluated in the same manner as in Examples 1 to 61.
  • a transition metal (W, Mo) film was first formed on a silicon wafer using a batch-type thermal oxidation furnace, and then a transition metal (W, Mo) film was formed on the oxide film to a thickness of 1200 ⁇ ( ⁇ 10%) using

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WO2019150990A1 (ja) * 2018-02-05 2019-08-08 富士フイルム株式会社 薬液、薬液の製造方法、基板の処理方法
WO2022030627A1 (ja) * 2020-08-07 2022-02-10 株式会社トクヤマ 半導体ウエハ用処理液
JP2022099242A (ja) * 2020-12-22 2022-07-04 東京応化工業株式会社 精製オルト過ヨウ素酸水溶液の製造方法、半導体素子の製造方法及びオルト過ヨウ素酸水溶液

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US8211800B2 (en) * 2010-08-23 2012-07-03 Kabushiki Kaisha Toshiba Ru cap metal post cleaning method and cleaning chemical
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JP2014103179A (ja) * 2012-11-16 2014-06-05 Fujifilm Corp 半導体基板のエッチング液、これを用いたエッチング方法及び半導体素子の製造方法
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液
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JP6901998B2 (ja) 2018-06-15 2021-07-14 株式会社トクヤマ ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物
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JP6874231B1 (ja) * 2019-09-27 2021-05-19 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
WO2021210310A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 処理液、化学的機械的研磨方法、半導体基板の処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019150990A1 (ja) * 2018-02-05 2019-08-08 富士フイルム株式会社 薬液、薬液の製造方法、基板の処理方法
WO2022030627A1 (ja) * 2020-08-07 2022-02-10 株式会社トクヤマ 半導体ウエハ用処理液
JP2022099242A (ja) * 2020-12-22 2022-07-04 東京応化工業株式会社 精製オルト過ヨウ素酸水溶液の製造方法、半導体素子の製造方法及びオルト過ヨウ素酸水溶液

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