JP2022003132A5 - - Google Patents
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- Publication number
- JP2022003132A5 JP2022003132A5 JP2021155802A JP2021155802A JP2022003132A5 JP 2022003132 A5 JP2022003132 A5 JP 2022003132A5 JP 2021155802 A JP2021155802 A JP 2021155802A JP 2021155802 A JP2021155802 A JP 2021155802A JP 2022003132 A5 JP2022003132 A5 JP 2022003132A5
- Authority
- JP
- Japan
- Prior art keywords
- quaternary alkylammonium
- copper
- aluminum
- less
- hypochlorous acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000005210 alkyl ammonium group Chemical group 0.000 claims 4
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- GBOUKGHVOPJFLP-UHFFFAOYSA-N C[N+](C)(C)C.ClO Chemical compound C[N+](C)(C)C.ClO GBOUKGHVOPJFLP-UHFFFAOYSA-N 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023102576A JP7480397B2 (ja) | 2018-05-23 | 2023-06-22 | 次亜塩素酸第４級アルキルアンモニウム溶液 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018099223 | 2018-05-23 | ||
| JP2018099224 | 2018-05-23 | ||
| JP2018099224 | 2018-05-23 | ||
| JP2018099223 | 2018-05-23 | ||
| JP2018116832 | 2018-06-20 | ||
| JP2018116832 | 2018-06-20 | ||
| JP2020521221A JP6982686B2 (ja) | 2018-05-23 | 2019-05-20 | 次亜塩素酸第４級アルキルアンモニウム溶液の製造方法および半導体ウエハの処理方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020521221A Division JP6982686B2 (ja) | 2018-05-23 | 2019-05-20 | 次亜塩素酸第４級アルキルアンモニウム溶液の製造方法および半導体ウエハの処理方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023102576A Division JP7480397B2 (ja) | 2018-05-23 | 2023-06-22 | 次亜塩素酸第４級アルキルアンモニウム溶液 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022003132A JP2022003132A (ja) | 2022-01-11 |
| JP2022003132A5 true JP2022003132A5 (https=) | 2022-05-17 |
| JP7303268B2 JP7303268B2 (ja) | 2023-07-04 |
Family
ID=68616734
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020521221A Active JP6982686B2 (ja) | 2018-05-23 | 2019-05-20 | 次亜塩素酸第４級アルキルアンモニウム溶液の製造方法および半導体ウエハの処理方法 |
| JP2021155802A Active JP7303268B2 (ja) | 2018-05-23 | 2021-09-24 | 次亜塩素酸第４級アルキルアンモニウム溶液 |
| JP2023102576A Active JP7480397B2 (ja) | 2018-05-23 | 2023-06-22 | 次亜塩素酸第４級アルキルアンモニウム溶液 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020521221A Active JP6982686B2 (ja) | 2018-05-23 | 2019-05-20 | 次亜塩素酸第４級アルキルアンモニウム溶液の製造方法および半導体ウエハの処理方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023102576A Active JP7480397B2 (ja) | 2018-05-23 | 2023-06-22 | 次亜塩素酸第４級アルキルアンモニウム溶液 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11572533B2 (https=) |
| EP (1) | EP3798207A4 (https=) |
| JP (3) | JP6982686B2 (https=) |
| KR (2) | KR102812765B1 (https=) |
| CN (2) | CN117567296A (https=) |
| TW (2) | TWI818024B (https=) |
| WO (1) | WO2019225541A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102769981B1 (ko) | 2019-11-22 | 2025-02-18 | 가부시끼가이샤 도꾸야마 | 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법 |
| KR102582791B1 (ko) * | 2020-02-25 | 2023-09-25 | 가부시끼가이샤 도꾸야마 | 루테늄의 반도체용 처리액 |
| JP7031073B1 (ja) * | 2020-04-17 | 2022-03-07 | 株式会社トクヤマ | ハロゲン酸素酸溶液の製造方法 |
| JP7797124B2 (ja) | 2020-06-25 | 2026-01-13 | 株式会社トクヤマ | ハロゲン酸素酸溶液の製造方法及び製造装置 |
| WO2022024636A1 (ja) | 2020-07-31 | 2022-02-03 | 富士フイルム株式会社 | 薬液、薬液収容体、基板の処理方法 |
| CN112337419B (zh) * | 2020-10-27 | 2022-05-13 | 浙江花蝶染料化工有限公司 | 一种4-(1-羟基-1-甲基乙基)-2-丙基咪唑-5-羧酸乙酯的制备方法 |
| KR102352780B1 (ko) | 2021-04-30 | 2022-01-18 | 김을환 | 차아염소산 및 그 이온을 포함하는 잔류염소 생성용 전극 및 이를 구비하는 차아염소산 및 그 이온을 포함하는 잔류염소 생성 장치 |
| CN115916741B (zh) * | 2021-06-07 | 2025-08-08 | 株式会社德山 | 卤素含氧酸的制造方法及其制造装置 |
| WO2025143006A1 (ja) * | 2023-12-28 | 2025-07-03 | 株式会社トクヤマ | 次亜臭素酸第四級アルキルアンモニウム溶液の製造方法及び半導体ウエハの処理方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2256958A (en) * | 1939-05-13 | 1941-09-23 | Pittsburgh Plate Glass Co | Quaternary ammonium hypohalites and method of making same |
| AU572896B2 (en) * | 1983-11-09 | 1988-05-19 | Sumitomo Chemical Company, Limited | 2-phenylbenzotriazoles |
| JP3585437B2 (ja) | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
| JP2003119494A (ja) | 2001-10-05 | 2003-04-23 | Nec Corp | 洗浄組成物およびこれを用いた洗浄方法と洗浄装置 |
| BRPI0418529A (pt) * | 2004-02-11 | 2007-05-15 | Mallinckrodt Baker Inc | composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos |
| JP2009081247A (ja) | 2007-09-26 | 2009-04-16 | Panasonic Corp | ルテニウム膜のエッチング方法 |
| JP5405129B2 (ja) * | 2009-01-05 | 2014-02-05 | 三菱マテリアル株式会社 | ペルフルオロアルキルスルホン酸塩の製造方法 |
| WO2011102276A1 (ja) * | 2010-02-22 | 2011-08-25 | Jx日鉱日石金属株式会社 | 高純度スルホン酸銅水溶液及びその製造方法 |
| WO2014034681A1 (ja) * | 2012-08-31 | 2014-03-06 | ライオン株式会社 | ポリオキシエチレンアルキルエーテル硫酸塩の製造方法 |
| JP2014062297A (ja) * | 2012-09-20 | 2014-04-10 | Toshiba Corp | 処理装置、処理液の製造方法、および電子デバイスの製造方法 |
| JP5848690B2 (ja) | 2012-11-26 | 2016-01-27 | 三洋化成工業株式会社 | 第四級塩溶液の製造方法 |
| JP6401491B2 (ja) * | 2013-08-28 | 2018-10-10 | オルガノ株式会社 | 分離膜のスライム抑制方法、逆浸透膜またはナノろ過膜用スライム抑制剤組成物、および分離膜用スライム抑制剤組成物の製造方法 |
| CN111684570B (zh) * | 2018-01-16 | 2024-02-27 | 株式会社德山 | 含有次氯酸根离子的半导体晶圆的处理液 |
| KR102769981B1 (ko) * | 2019-11-22 | 2025-02-18 | 가부시끼가이샤 도꾸야마 | 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법 |
-
2019
- 2019-05-20 US US17/057,207 patent/US11572533B2/en active Active
- 2019-05-20 JP JP2020521221A patent/JP6982686B2/ja active Active
- 2019-05-20 CN CN202311548047.7A patent/CN117567296A/zh active Pending
- 2019-05-20 EP EP19807457.7A patent/EP3798207A4/en active Pending
- 2019-05-20 KR KR1020247015510A patent/KR102812765B1/ko active Active
- 2019-05-20 KR KR1020207033481A patent/KR102764031B1/ko active Active
- 2019-05-20 CN CN201980034553.XA patent/CN112189006B/zh active Active
- 2019-05-20 WO PCT/JP2019/019898 patent/WO2019225541A1/ja not_active Ceased
- 2019-05-22 TW TW108117645A patent/TWI818024B/zh active
- 2019-05-22 TW TW112134627A patent/TWI876529B/zh active
-
2021
- 2021-09-24 JP JP2021155802A patent/JP7303268B2/ja active Active
-
2023
- 2023-06-22 JP JP2023102576A patent/JP7480397B2/ja active Active
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