TWI818024B - 次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的洗淨方法 - Google Patents

次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的洗淨方法 Download PDF

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Publication number
TWI818024B
TWI818024B TW108117645A TW108117645A TWI818024B TW I818024 B TWI818024 B TW I818024B TW 108117645 A TW108117645 A TW 108117645A TW 108117645 A TW108117645 A TW 108117645A TW I818024 B TWI818024 B TW I818024B
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Taiwan
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solution
quaternary alkylammonium
reaction
hypochlorite
hypochlorite solution
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TW108117645A
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English (en)
Chinese (zh)
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TW202003446A (zh
Inventor
下田享史
吉川由樹
根岸貴幸
東野誠司
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日商德山股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B11/00—Oxides or oxyacids of halogens; Salts thereof
    • C01B11/04—Hypochlorous acid
    • C01B11/06—Hypochlorites
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
    • C07C209/68—Preparation of compounds containing amino groups bound to a carbon skeleton from amines, by reactions not involving amino groups, e.g. reduction of unsaturated amines, aromatisation, or substitution of the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/62—Quaternary ammonium compounds
    • C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW108117645A 2018-05-23 2019-05-22 次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的洗淨方法 TWI818024B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2018099223 2018-05-23
JP2018-099223 2018-05-23
JP2018099224 2018-05-23
JP2018-099224 2018-05-23
JP2018116832 2018-06-20
JP2018-116832 2018-06-20

Publications (2)

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TW202003446A TW202003446A (zh) 2020-01-16
TWI818024B true TWI818024B (zh) 2023-10-11

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TW108117645A TWI818024B (zh) 2018-05-23 2019-05-22 次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的洗淨方法
TW112134627A TWI876529B (zh) 2018-05-23 2019-05-22 次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的洗淨方法

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US (1) US11572533B2 (https=)
EP (1) EP3798207A4 (https=)
JP (3) JP6982686B2 (https=)
KR (2) KR102812765B1 (https=)
CN (2) CN117567296A (https=)
TW (2) TWI818024B (https=)
WO (1) WO2019225541A1 (https=)

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KR102769981B1 (ko) 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법
KR102582791B1 (ko) * 2020-02-25 2023-09-25 가부시끼가이샤 도꾸야마 루테늄의 반도체용 처리액
JP7031073B1 (ja) * 2020-04-17 2022-03-07 株式会社トクヤマ ハロゲン酸素酸溶液の製造方法
JP7797124B2 (ja) 2020-06-25 2026-01-13 株式会社トクヤマ ハロゲン酸素酸溶液の製造方法及び製造装置
WO2022024636A1 (ja) 2020-07-31 2022-02-03 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
CN112337419B (zh) * 2020-10-27 2022-05-13 浙江花蝶染料化工有限公司 一种4-(1-羟基-1-甲基乙基)-2-丙基咪唑-5-羧酸乙酯的制备方法
KR102352780B1 (ko) 2021-04-30 2022-01-18 김을환 차아염소산 및 그 이온을 포함하는 잔류염소 생성용 전극 및 이를 구비하는 차아염소산 및 그 이온을 포함하는 잔류염소 생성 장치
CN115916741B (zh) * 2021-06-07 2025-08-08 株式会社德山 卤素含氧酸的制造方法及其制造装置
WO2025143006A1 (ja) * 2023-12-28 2025-07-03 株式会社トクヤマ 次亜臭素酸第四級アルキルアンモニウム溶液の製造方法及び半導体ウエハの処理方法

Citations (2)

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US2256958A (en) * 1939-05-13 1941-09-23 Pittsburgh Plate Glass Co Quaternary ammonium hypohalites and method of making same
TW200526774A (en) * 2004-02-11 2005-08-16 Mallinckrodt Baker Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof

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AU572896B2 (en) * 1983-11-09 1988-05-19 Sumitomo Chemical Company, Limited 2-phenylbenzotriazoles
JP3585437B2 (ja) 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP2003119494A (ja) 2001-10-05 2003-04-23 Nec Corp 洗浄組成物およびこれを用いた洗浄方法と洗浄装置
JP2009081247A (ja) 2007-09-26 2009-04-16 Panasonic Corp ルテニウム膜のエッチング方法
JP5405129B2 (ja) * 2009-01-05 2014-02-05 三菱マテリアル株式会社 ペルフルオロアルキルスルホン酸塩の製造方法
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WO2014034681A1 (ja) * 2012-08-31 2014-03-06 ライオン株式会社 ポリオキシエチレンアルキルエーテル硫酸塩の製造方法
JP2014062297A (ja) * 2012-09-20 2014-04-10 Toshiba Corp 処理装置、処理液の製造方法、および電子デバイスの製造方法
JP5848690B2 (ja) 2012-11-26 2016-01-27 三洋化成工業株式会社 第四級塩溶液の製造方法
JP6401491B2 (ja) * 2013-08-28 2018-10-10 オルガノ株式会社 分離膜のスライム抑制方法、逆浸透膜またはナノろ過膜用スライム抑制剤組成物、および分離膜用スライム抑制剤組成物の製造方法
CN111684570B (zh) * 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
KR102769981B1 (ko) * 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2256958A (en) * 1939-05-13 1941-09-23 Pittsburgh Plate Glass Co Quaternary ammonium hypohalites and method of making same
TW200526774A (en) * 2004-02-11 2005-08-16 Mallinckrodt Baker Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof

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Publication number Publication date
US20210309942A1 (en) 2021-10-07
WO2019225541A1 (ja) 2019-11-28
US11572533B2 (en) 2023-02-07
TW202400554A (zh) 2024-01-01
JP7480397B2 (ja) 2024-05-09
TWI876529B (zh) 2025-03-11
JP6982686B2 (ja) 2021-12-17
JP2023126263A (ja) 2023-09-07
JP2022003132A (ja) 2022-01-11
KR20240073135A (ko) 2024-05-24
JP7303268B2 (ja) 2023-07-04
CN117567296A (zh) 2024-02-20
KR102764031B1 (ko) 2025-02-07
JPWO2019225541A1 (ja) 2021-02-12
CN112189006B (zh) 2023-11-21
EP3798207A4 (en) 2022-03-23
TW202003446A (zh) 2020-01-16
KR20210015796A (ko) 2021-02-10
CN112189006A (zh) 2021-01-05
EP3798207A1 (en) 2021-03-31
KR102812765B1 (ko) 2025-05-26

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