JP2022553203A5 - - Google Patents
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- Publication number
- JP2022553203A5 JP2022553203A5 JP2022522907A JP2022522907A JP2022553203A5 JP 2022553203 A5 JP2022553203 A5 JP 2022553203A5 JP 2022522907 A JP2022522907 A JP 2022522907A JP 2022522907 A JP2022522907 A JP 2022522907A JP 2022553203 A5 JP2022553203 A5 JP 2022553203A5
- Authority
- JP
- Japan
- Prior art keywords
- approximately
- mass
- acid
- composition according
- pure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962916280P | 2019-10-17 | 2019-10-17 | |
| US62/916,280 | 2019-10-17 | ||
| PCT/US2020/055647 WO2021076676A1 (en) | 2019-10-17 | 2020-10-15 | Etching composition and method for euv mask protective structure |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022553203A JP2022553203A (ja) | 2022-12-22 |
| JP2022553203A5 true JP2022553203A5 (https=) | 2023-10-23 |
| JP7664914B2 JP7664914B2 (ja) | 2025-04-18 |
Family
ID=75538878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022522907A Active JP7664914B2 (ja) | 2019-10-17 | 2020-10-15 | Ｅｕｖマスク保護構造のためのエッチング組成物及び方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240103377A1 (https=) |
| EP (1) | EP4045978A4 (https=) |
| JP (1) | JP7664914B2 (https=) |
| KR (1) | KR20220084146A (https=) |
| CN (1) | CN114761878A (https=) |
| TW (1) | TWI845778B (https=) |
| WO (1) | WO2021076676A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102891405B1 (ko) * | 2021-05-25 | 2025-11-27 | 주식회사 이엔에프테크놀로지 | 식각액 조성물 |
| KR102898348B1 (ko) * | 2021-05-28 | 2025-12-11 | 주식회사 이엔에프테크놀로지 | 식각액 조성물 |
| KR102930934B1 (ko) * | 2021-08-27 | 2026-02-25 | 주식회사 이엔에프테크놀로지 | 실리콘 선택적 식각액 조성물 |
| JP7811855B2 (ja) * | 2022-02-02 | 2026-02-06 | 関東化学株式会社 | エッチング液組成物およびエッチング方法 |
| JP7372501B1 (ja) * | 2022-09-15 | 2023-10-31 | 日本碍子株式会社 | Ｅｕｖ透過膜 |
| KR20240052248A (ko) * | 2022-10-14 | 2024-04-23 | 주식회사 이엔에프테크놀로지 | 실리콘 식각액 조성물 및 이를 이용한 식각 방법 |
| WO2024241857A1 (ja) * | 2023-05-24 | 2024-11-28 | 富士フイルム株式会社 | エッチング液、半導体デバイスの製造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6627546B2 (en) * | 2001-06-29 | 2003-09-30 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
| JP4651269B2 (ja) | 2003-02-19 | 2011-03-16 | 三菱瓦斯化学株式会社 | 洗浄液およびそれを用いた洗浄法 |
| SG129274A1 (en) * | 2003-02-19 | 2007-02-26 | Mitsubishi Gas Chemical Co | Cleaaning solution and cleaning process using the solution |
| KR101070170B1 (ko) * | 2003-12-04 | 2011-10-05 | 동우 화인켐 주식회사 | 니켈 에칭 용액 |
| US20090212021A1 (en) * | 2005-06-13 | 2009-08-27 | Advanced Technology Materials, Inc. | Compositions and methods for selective removal of metal or metal alloy after metal silicide formation |
| KR100706822B1 (ko) * | 2005-10-17 | 2007-04-12 | 삼성전자주식회사 | 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법 |
| US7666555B2 (en) | 2006-12-29 | 2010-02-23 | Intel Corporation | Pellicle, methods of fabrication and methods of use for extreme ultraviolet lithography |
| WO2009032460A1 (en) * | 2007-08-02 | 2009-03-12 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of residue from a microelectronic device |
| WO2012154498A2 (en) * | 2011-05-06 | 2012-11-15 | Advanced Technology Materials, Inc. | Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications |
| KR102102792B1 (ko) * | 2011-12-28 | 2020-05-29 | 엔테그리스, 아이엔씨. | 티타늄 나이트라이드의 선택적인 에칭을 위한 조성물 및 방법 |
| US20150162213A1 (en) | 2012-05-11 | 2015-06-11 | Advanced Technology Materials, Inc. | Formulations for wet etching nipt during silicide fabrication |
| CN102912357B (zh) * | 2012-10-31 | 2014-08-06 | 厦门大学 | 一种钛种植体表面制备微纳米结构的方法 |
| JP5980717B2 (ja) | 2013-05-02 | 2016-08-31 | 富士フイルム株式会社 | エッチング液、これを用いたエッチング方法、エッチング液のキット、および半導体基板製品の製造方法 |
| US9360749B2 (en) | 2014-04-24 | 2016-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pellicle structure and method for forming the same |
| KR102246875B1 (ko) | 2014-11-13 | 2021-04-30 | 삼성전자 주식회사 | 그라파이트 층을 갖는 펠리클을 제조하는 방법 |
| US10301580B2 (en) * | 2014-12-30 | 2019-05-28 | Versum Materials Us, Llc | Stripping compositions having high WN/W etching selectivity |
| US9976111B2 (en) * | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
| WO2017091572A1 (en) * | 2015-11-23 | 2017-06-01 | Entegris, Inc. | Composition and process for selectively etching p-doped polysilicon relative to silicon nitride |
| JP2017171992A (ja) | 2016-03-24 | 2017-09-28 | 株式会社Adeka | 銀含有材料用エッチング液組成物及びエッチング方法 |
| JP6518801B2 (ja) | 2017-03-10 | 2019-05-22 | エスアンドエス テック カンパニー リミテッド | 極紫外線リソグラフィ用ペリクル及びその製造方法 |
| KR102675777B1 (ko) | 2017-07-31 | 2024-06-18 | 삼성전자주식회사 | 포토마스크용 펠리클과 이를 포함하는 레티클 및 포토마스크용 펠리클의 제조방법 |
| US10934485B2 (en) * | 2017-08-25 | 2021-03-02 | Versum Materials Us, Llc | Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device |
| US10889757B2 (en) | 2017-10-19 | 2021-01-12 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
| CN110095952A (zh) * | 2018-01-29 | 2019-08-06 | 张家港奥擎电子化学有限责任公司 | 一种用于选择性移除氮化钛硬掩模和/或蚀刻残留物的组合物 |
| US11499236B2 (en) * | 2018-03-16 | 2022-11-15 | Versum Materials Us, Llc | Etching solution for tungsten word line recess |
-
2020
- 2020-10-15 JP JP2022522907A patent/JP7664914B2/ja active Active
- 2020-10-15 US US17/754,816 patent/US20240103377A1/en not_active Abandoned
- 2020-10-15 CN CN202080083083.9A patent/CN114761878A/zh active Pending
- 2020-10-15 TW TW109135623A patent/TWI845778B/zh active
- 2020-10-15 EP EP20877989.2A patent/EP4045978A4/en not_active Withdrawn
- 2020-10-15 KR KR1020227016615A patent/KR20220084146A/ko active Pending
- 2020-10-15 WO PCT/US2020/055647 patent/WO2021076676A1/en not_active Ceased
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