CN114761878A - 用于euv掩模保护结构的蚀刻组合物及方法 - Google Patents

用于euv掩模保护结构的蚀刻组合物及方法 Download PDF

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Publication number
CN114761878A
CN114761878A CN202080083083.9A CN202080083083A CN114761878A CN 114761878 A CN114761878 A CN 114761878A CN 202080083083 A CN202080083083 A CN 202080083083A CN 114761878 A CN114761878 A CN 114761878A
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CN
China
Prior art keywords
composition
acid
neat
water
hydrochloric acid
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080083083.9A
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English (en)
Chinese (zh)
Inventor
陈昭翔
张仲逸
李翊嘉
刘文达
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Versum Materials US LLC
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Versum Materials US LLC
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Publication date
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Publication of CN114761878A publication Critical patent/CN114761878A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN202080083083.9A 2019-10-17 2020-10-15 用于euv掩模保护结构的蚀刻组合物及方法 Pending CN114761878A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962916280P 2019-10-17 2019-10-17
US62/916,280 2019-10-17
PCT/US2020/055647 WO2021076676A1 (en) 2019-10-17 2020-10-15 Etching composition and method for euv mask protective structure

Publications (1)

Publication Number Publication Date
CN114761878A true CN114761878A (zh) 2022-07-15

Family

ID=75538878

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080083083.9A Pending CN114761878A (zh) 2019-10-17 2020-10-15 用于euv掩模保护结构的蚀刻组合物及方法

Country Status (7)

Country Link
US (1) US20240103377A1 (https=)
EP (1) EP4045978A4 (https=)
JP (1) JP7664914B2 (https=)
KR (1) KR20220084146A (https=)
CN (1) CN114761878A (https=)
TW (1) TWI845778B (https=)
WO (1) WO2021076676A1 (https=)

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KR102891405B1 (ko) * 2021-05-25 2025-11-27 주식회사 이엔에프테크놀로지 식각액 조성물
KR102898348B1 (ko) * 2021-05-28 2025-12-11 주식회사 이엔에프테크놀로지 식각액 조성물
KR102930934B1 (ko) * 2021-08-27 2026-02-25 주식회사 이엔에프테크놀로지 실리콘 선택적 식각액 조성물
JP7811855B2 (ja) * 2022-02-02 2026-02-06 関東化学株式会社 エッチング液組成物およびエッチング方法
JP7372501B1 (ja) * 2022-09-15 2023-10-31 日本碍子株式会社 Ｅｕｖ透過膜
KR20240052248A (ko) * 2022-10-14 2024-04-23 주식회사 이엔에프테크놀로지 실리콘 식각액 조성물 및 이를 이용한 식각 방법
WO2024241857A1 (ja) * 2023-05-24 2024-11-28 富士フイルム株式会社 エッチング液、半導体デバイスの製造方法

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CN101233601A (zh) * 2005-06-13 2008-07-30 高级技术材料公司 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法
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CN106226991A (zh) * 2015-05-01 2016-12-14 气体产品与化学公司 TiN硬掩模和蚀刻残留物去除
CN109423288A (zh) * 2017-08-25 2019-03-05 弗萨姆材料美国有限责任公司 制造半导体器件过程中从硅-锗/硅叠层中相对于硅-锗合金选择性去除硅的蚀刻溶液
US20190119571A1 (en) * 2017-10-19 2019-04-25 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
CN110095952A (zh) * 2018-01-29 2019-08-06 张家港奥擎电子化学有限责任公司 一种用于选择性移除氮化钛硬掩模和/或蚀刻残留物的组合物

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CN1522292A (zh) * 2001-06-29 2004-08-18 �����Ʒ����ѧ��Ʒ��˾ 从表面去除污染物的方法及其使用的组合物
CN101233601A (zh) * 2005-06-13 2008-07-30 高级技术材料公司 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法
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CN102912357A (zh) * 2012-10-31 2013-02-06 厦门大学 一种钛种植体表面制备微纳米结构的方法
CN106226991A (zh) * 2015-05-01 2016-12-14 气体产品与化学公司 TiN硬掩模和蚀刻残留物去除
CN109423288A (zh) * 2017-08-25 2019-03-05 弗萨姆材料美国有限责任公司 制造半导体器件过程中从硅-锗/硅叠层中相对于硅-锗合金选择性去除硅的蚀刻溶液
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CN110095952A (zh) * 2018-01-29 2019-08-06 张家港奥擎电子化学有限责任公司 一种用于选择性移除氮化钛硬掩模和/或蚀刻残留物的组合物

Also Published As

Publication number Publication date
WO2021076676A1 (en) 2021-04-22
EP4045978A1 (en) 2022-08-24
US20240103377A1 (en) 2024-03-28
EP4045978A4 (en) 2023-11-15
JP2022553203A (ja) 2022-12-22
JP7664914B2 (ja) 2025-04-18
TWI845778B (zh) 2024-06-21
TW202131103A (zh) 2021-08-16
KR20220084146A (ko) 2022-06-21

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