TWI845778B - 蝕刻組合物以及用於euv光罩保護結構之方法 - Google Patents

蝕刻組合物以及用於euv光罩保護結構之方法 Download PDF

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Publication number
TWI845778B
TWI845778B TW109135623A TW109135623A TWI845778B TW I845778 B TWI845778 B TW I845778B TW 109135623 A TW109135623 A TW 109135623A TW 109135623 A TW109135623 A TW 109135623A TW I845778 B TWI845778 B TW I845778B
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Taiwan
Prior art keywords
acid
pure
etching composition
composition
another aspect
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TW109135623A
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English (en)
Chinese (zh)
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TW202131103A (zh
Inventor
陳昭翔
張仲逸
李翊嘉
劉文達
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美商慧盛材料美國有限責任公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW109135623A 2019-10-17 2020-10-15 蝕刻組合物以及用於euv光罩保護結構之方法 TWI845778B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962916280P 2019-10-17 2019-10-17
US62/916,280 2019-10-17

Publications (2)

Publication Number Publication Date
TW202131103A TW202131103A (zh) 2021-08-16
TWI845778B true TWI845778B (zh) 2024-06-21

Family

ID=75538878

Family Applications (1)

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TW109135623A TWI845778B (zh) 2019-10-17 2020-10-15 蝕刻組合物以及用於euv光罩保護結構之方法

Country Status (7)

Country Link
US (1) US20240103377A1 (https=)
EP (1) EP4045978A4 (https=)
JP (1) JP7664914B2 (https=)
KR (1) KR20220084146A (https=)
CN (1) CN114761878A (https=)
TW (1) TWI845778B (https=)
WO (1) WO2021076676A1 (https=)

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KR102891405B1 (ko) * 2021-05-25 2025-11-27 주식회사 이엔에프테크놀로지 식각액 조성물
KR102898348B1 (ko) * 2021-05-28 2025-12-11 주식회사 이엔에프테크놀로지 식각액 조성물
KR102930934B1 (ko) * 2021-08-27 2026-02-25 주식회사 이엔에프테크놀로지 실리콘 선택적 식각액 조성물
JP7811855B2 (ja) * 2022-02-02 2026-02-06 関東化学株式会社 エッチング液組成物およびエッチング方法
JP7372501B1 (ja) * 2022-09-15 2023-10-31 日本碍子株式会社 Ｅｕｖ透過膜
KR20240052248A (ko) * 2022-10-14 2024-04-23 주식회사 이엔에프테크놀로지 실리콘 식각액 조성물 및 이를 이용한 식각 방법
WO2024241857A1 (ja) * 2023-05-24 2024-11-28 富士フイルム株式会社 エッチング液、半導体デバイスの製造方法

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TW200500458A (en) * 2003-02-19 2005-01-01 Mitsubishi Gas Chemical Co Cleaning solution and cleaning process using the solution
US20070087580A1 (en) * 2005-10-17 2007-04-19 Dong-Min Kang Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same
CN102912357A (zh) * 2012-10-31 2013-02-06 厦门大学 一种钛种植体表面制备微纳米结构的方法
TW201736576A (zh) * 2015-11-23 2017-10-16 恩特葛瑞斯股份有限公司 用於相對於氮化矽選擇性蝕刻p摻雜多晶矽之組合物及方法
TW201923040A (zh) * 2017-10-19 2019-06-16 美商富士軟片電子材料美國股份有限公司 蝕刻組成物

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TW200500458A (en) * 2003-02-19 2005-01-01 Mitsubishi Gas Chemical Co Cleaning solution and cleaning process using the solution
US20070087580A1 (en) * 2005-10-17 2007-04-19 Dong-Min Kang Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same
CN102912357A (zh) * 2012-10-31 2013-02-06 厦门大学 一种钛种植体表面制备微纳米结构的方法
TW201736576A (zh) * 2015-11-23 2017-10-16 恩特葛瑞斯股份有限公司 用於相對於氮化矽選擇性蝕刻p摻雜多晶矽之組合物及方法
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Also Published As

Publication number Publication date
CN114761878A (zh) 2022-07-15
WO2021076676A1 (en) 2021-04-22
EP4045978A1 (en) 2022-08-24
US20240103377A1 (en) 2024-03-28
EP4045978A4 (en) 2023-11-15
JP2022553203A (ja) 2022-12-22
JP7664914B2 (ja) 2025-04-18
TW202131103A (zh) 2021-08-16
KR20220084146A (ko) 2022-06-21

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