JP7664914B2 - Ｅｕｖマスク保護構造のためのエッチング組成物及び方法 - Google Patents

Ｅｕｖマスク保護構造のためのエッチング組成物及び方法 Download PDF

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JP7664914B2
JP7664914B2 JP2022522907A JP2022522907A JP7664914B2 JP 7664914 B2 JP7664914 B2 JP 7664914B2 JP 2022522907 A JP2022522907 A JP 2022522907A JP 2022522907 A JP2022522907 A JP 2022522907A JP 7664914 B2 JP7664914 B2 JP 7664914B2
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JP2022553203A (ja
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チェン チャオ－シアン
チャン チュン－イー
リー イー－チア
ダー リウ ウェン
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バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2022522907A 2019-10-17 2020-10-15 Ｅｕｖマスク保護構造のためのエッチング組成物及び方法 Active JP7664914B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962916280P 2019-10-17 2019-10-17
US62/916,280 2019-10-17
PCT/US2020/055647 WO2021076676A1 (en) 2019-10-17 2020-10-15 Etching composition and method for euv mask protective structure

Publications (3)

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JP2022553203A JP2022553203A (ja) 2022-12-22
JP2022553203A5 JP2022553203A5 (https=) 2023-10-23
JP7664914B2 true JP7664914B2 (ja) 2025-04-18

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Country Link
US (1) US20240103377A1 (https=)
EP (1) EP4045978A4 (https=)
JP (1) JP7664914B2 (https=)
KR (1) KR20220084146A (https=)
CN (1) CN114761878A (https=)
TW (1) TWI845778B (https=)
WO (1) WO2021076676A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102891405B1 (ko) * 2021-05-25 2025-11-27 주식회사 이엔에프테크놀로지 식각액 조성물
KR102898348B1 (ko) * 2021-05-28 2025-12-11 주식회사 이엔에프테크놀로지 식각액 조성물
KR102930934B1 (ko) * 2021-08-27 2026-02-25 주식회사 이엔에프테크놀로지 실리콘 선택적 식각액 조성물
JP7811855B2 (ja) * 2022-02-02 2026-02-06 関東化学株式会社 エッチング液組成物およびエッチング方法
JP7372501B1 (ja) * 2022-09-15 2023-10-31 日本碍子株式会社 Ｅｕｖ透過膜
KR20240052248A (ko) * 2022-10-14 2024-04-23 주식회사 이엔에프테크놀로지 실리콘 식각액 조성물 및 이를 이용한 식각 방법
WO2024241857A1 (ja) * 2023-05-24 2024-11-28 富士フイルム株式会社 エッチング液、半導体デバイスの製造方法

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US20070087580A1 (en) 2005-10-17 2007-04-19 Dong-Min Kang Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same
US20080158535A1 (en) 2006-12-29 2008-07-03 Michael Goldstein Pellicle, methods of fabrication & methods of use for extreme ultraviolet lithography
JP2014220300A (ja) 2013-05-02 2014-11-20 富士フイルム株式会社 エッチング液、これを用いたエッチング方法、エッチング液のキット、および半導体基板製品の製造方法
US20150162213A1 (en) 2012-05-11 2015-06-11 Advanced Technology Materials, Inc. Formulations for wet etching nipt during silicide fabrication
US20150309404A1 (en) 2014-04-24 2015-10-29 Taiwan Semiconductor Manufacturing Co., Ltd Pellicle structure and method for forming the same
US20160139500A1 (en) 2014-11-13 2016-05-19 Samsung Electronics Co., Ltd. Methods of manufacturing pellicles having graphite layers
JP2017171992A (ja) 2016-03-24 2017-09-28 株式会社Adeka 銀含有材料用エッチング液組成物及びエッチング方法
JP2018151622A (ja) 2017-03-10 2018-09-27 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用ペリクル及びその製造方法
JP2018535558A (ja) 2015-11-23 2018-11-29 インテグリス・インコーポレーテッド 窒化ケイ素と比べてｐ型ドープポリシリコンを選択的にエッチングするための組成物及び方法
JP2019028462A (ja) 2017-07-31 2019-02-21 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． フォトマスク用ペリクル、及びそれを含むレチクル、並びにフォトマスク用ペリクルの製造方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004253524A (ja) 2003-02-19 2004-09-09 Mitsubishi Gas Chem Co Inc 洗浄液およびそれを用いた洗浄法
US20070087580A1 (en) 2005-10-17 2007-04-19 Dong-Min Kang Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same
US20080158535A1 (en) 2006-12-29 2008-07-03 Michael Goldstein Pellicle, methods of fabrication & methods of use for extreme ultraviolet lithography
US20150162213A1 (en) 2012-05-11 2015-06-11 Advanced Technology Materials, Inc. Formulations for wet etching nipt during silicide fabrication
JP2014220300A (ja) 2013-05-02 2014-11-20 富士フイルム株式会社 エッチング液、これを用いたエッチング方法、エッチング液のキット、および半導体基板製品の製造方法
US20150309404A1 (en) 2014-04-24 2015-10-29 Taiwan Semiconductor Manufacturing Co., Ltd Pellicle structure and method for forming the same
US20160139500A1 (en) 2014-11-13 2016-05-19 Samsung Electronics Co., Ltd. Methods of manufacturing pellicles having graphite layers
JP2018535558A (ja) 2015-11-23 2018-11-29 インテグリス・インコーポレーテッド 窒化ケイ素と比べてｐ型ドープポリシリコンを選択的にエッチングするための組成物及び方法
JP2017171992A (ja) 2016-03-24 2017-09-28 株式会社Adeka 銀含有材料用エッチング液組成物及びエッチング方法
JP2018151622A (ja) 2017-03-10 2018-09-27 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用ペリクル及びその製造方法
JP2019028462A (ja) 2017-07-31 2019-02-21 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． フォトマスク用ペリクル、及びそれを含むレチクル、並びにフォトマスク用ペリクルの製造方法
US20190119571A1 (en) 2017-10-19 2019-04-25 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions

Also Published As

Publication number Publication date
CN114761878A (zh) 2022-07-15
WO2021076676A1 (en) 2021-04-22
EP4045978A1 (en) 2022-08-24
US20240103377A1 (en) 2024-03-28
EP4045978A4 (en) 2023-11-15
JP2022553203A (ja) 2022-12-22
TWI845778B (zh) 2024-06-21
TW202131103A (zh) 2021-08-16
KR20220084146A (ko) 2022-06-21

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