JP2005536628A - 無電解堆積法 - Google Patents
無電解堆積法 Download PDFInfo
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- JP2005536628A JP2005536628A JP2003582335A JP2003582335A JP2005536628A JP 2005536628 A JP2005536628 A JP 2005536628A JP 2003582335 A JP2003582335 A JP 2003582335A JP 2003582335 A JP2003582335 A JP 2003582335A JP 2005536628 A JP2005536628 A JP 2005536628A
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- 238000000151 deposition Methods 0.000 title claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 238000000034 method Methods 0.000 claims abstract description 126
- 239000000243 solution Substances 0.000 claims abstract description 109
- 239000004020 conductor Substances 0.000 claims abstract description 93
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 83
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 49
- 230000004888 barrier function Effects 0.000 claims abstract description 41
- 229910000085 borane Inorganic materials 0.000 claims abstract description 38
- 238000004140 cleaning Methods 0.000 claims abstract description 38
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 33
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 25
- 238000012545 processing Methods 0.000 claims abstract description 21
- 239000003929 acidic solution Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 53
- 239000010941 cobalt Substances 0.000 claims description 48
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 48
- 229910017052 cobalt Inorganic materials 0.000 claims description 46
- 238000000137 annealing Methods 0.000 claims description 33
- 239000003989 dielectric material Substances 0.000 claims description 33
- 150000003839 salts Chemical class 0.000 claims description 25
- 229910000531 Co alloy Inorganic materials 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 230000000977 initiatory effect Effects 0.000 claims description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 claims description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 10
- 150000007522 mineralic acids Chemical class 0.000 claims description 8
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 7
- 239000008139 complexing agent Substances 0.000 claims description 7
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 7
- 239000004094 surface-active agent Substances 0.000 claims description 7
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000003381 stabilizer Substances 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 239000012279 sodium borohydride Substances 0.000 claims description 5
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- IIACRCGMVDHOTQ-UHFFFAOYSA-M sulfamate Chemical compound NS([O-])(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-M 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- WRSVIZQEENMKOC-UHFFFAOYSA-N [B].[Co].[Co].[Co] Chemical compound [B].[Co].[Co].[Co] WRSVIZQEENMKOC-UHFFFAOYSA-N 0.000 claims 2
- 150000003973 alkyl amines Chemical class 0.000 claims 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 2
- 238000007654 immersion Methods 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
- 150000002940 palladium Chemical class 0.000 claims 1
- 150000003057 platinum Chemical class 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 51
- 238000002161 passivation Methods 0.000 abstract description 14
- 239000000203 mixture Substances 0.000 description 66
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 27
- 238000005137 deposition process Methods 0.000 description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 15
- 229910052721 tungsten Inorganic materials 0.000 description 15
- 239000010937 tungsten Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 11
- 239000008367 deionised water Substances 0.000 description 11
- 229910021641 deionized water Inorganic materials 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 11
- 239000000654 additive Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000012459 cleaning agent Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- -1 amine boranes Chemical class 0.000 description 8
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910001080 W alloy Inorganic materials 0.000 description 6
- CPJYFACXEHYLFS-UHFFFAOYSA-N [B].[W].[Co] Chemical compound [B].[W].[Co] CPJYFACXEHYLFS-UHFFFAOYSA-N 0.000 description 6
- FEBFYWHXKVOHDI-UHFFFAOYSA-N [Co].[P][W] Chemical compound [Co].[P][W] FEBFYWHXKVOHDI-UHFFFAOYSA-N 0.000 description 6
- WDHWFGNRFMPTQS-UHFFFAOYSA-N cobalt tin Chemical compound [Co].[Sn] WDHWFGNRFMPTQS-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 229910001096 P alloy Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical group [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 5
- 229940044175 cobalt sulfate Drugs 0.000 description 5
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 5
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 5
- 239000003002 pH adjusting agent Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910001128 Sn alloy Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- SIBIBHIFKSKVRR-UHFFFAOYSA-N phosphanylidynecobalt Chemical compound [Co]#P SIBIBHIFKSKVRR-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000001509 sodium citrate Substances 0.000 description 4
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 4
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 206010010144 Completed suicide Diseases 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 241000393496 Electra Species 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004156 TaNx Inorganic materials 0.000 description 2
- 229910010421 TiNx Inorganic materials 0.000 description 2
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- WVMHLYQJPRXKLC-UHFFFAOYSA-N borane;n,n-dimethylmethanamine Chemical compound B.CN(C)C WVMHLYQJPRXKLC-UHFFFAOYSA-N 0.000 description 2
- HZEIHKAVLOJHDG-UHFFFAOYSA-N boranylidynecobalt Chemical compound [Co]#B HZEIHKAVLOJHDG-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
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- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229940074404 sodium succinate Drugs 0.000 description 2
- ZDQYSKICYIVCPN-UHFFFAOYSA-L sodium succinate (anhydrous) Chemical compound [Na+].[Na+].[O-]C(=O)CCC([O-])=O ZDQYSKICYIVCPN-UHFFFAOYSA-L 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 2
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 2
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ZMMUSLWEDSQDJY-UHFFFAOYSA-N [B].[Sn].[Co] Chemical compound [B].[Sn].[Co] ZMMUSLWEDSQDJY-UHFFFAOYSA-N 0.000 description 1
- YCOASTWZYJGKEK-UHFFFAOYSA-N [Co].[Ni].[W] Chemical compound [Co].[Ni].[W] YCOASTWZYJGKEK-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 150000001734 carboxylic acid salts Chemical class 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- ZHPNWZCWUUJAJC-UHFFFAOYSA-N fluorosilicon Chemical compound [Si]F ZHPNWZCWUUJAJC-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- RFLFDJSIZCCYIP-UHFFFAOYSA-L palladium(2+);sulfate Chemical compound [Pd+2].[O-]S([O-])(=O)=O RFLFDJSIZCCYIP-UHFFFAOYSA-L 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
[0001]本発明は、半導体デバイスの製造並びに半導体基板上の材料を堆積、除去、改良する装置及び方法に関する。
[0002]半導体基板上の超大規模集積回路(ULSI)の回路網における最近の進歩は、次世代の半導体デバイスがサブクウォーターミクロンの多重レベルメタライゼーションを必要とすることを示している。この技術の中心にある多重レベル相互接続部は、コンタクト、バイア、ライン、他の特徴部を含む高アスペクト比アパーチャ内に形成された相互接続特徴部の平坦化を必要とする。これら相互接続特徴部の確実な形成は、ULSIの成功と、特徴部のサイズが0.13μmより小さくなるにつれて回路密度や個々の基板とダイについての品質を高めるための努力の継続が非常に重要である。
[0008]一つの解決法は、金属酸化物の形成を防止するために金属層上に不働態化層又は封入層を堆積させることである。コバルトやコバルト合金は、銅を不働態化するのに適した材料として認められてきた。コバルトも、銅上に無電解堆積法によって堆積させることができる。しかしながら、銅は、巧く触媒せず、無電解溶液からの物質の堆積も開始しない。一つの解決法は、銅基板とガルバ反応によって堆積を開始する第一鉄材料とを接触させることによって無電解溶液から堆積を開始させることである。しかしながら、そのプロセスは、ある不働態化適用においては起こり得ない基板表面の上に連続する導電性表面を必要とする。他の解決法は、銅の表面上に触媒物質を堆積させることによって銅表面を活性化することである。しかしながら、触媒物質の堆積は、複数のステップを必要とし、触媒コロイド化合物を用いるものでもある。触媒コロイド化合物が誘電材料に付着してしまい、基板表面上に不働態化物質の望まない過度の非選択的堆積が生じることになる。不働態化物質の非選択的堆積は、表面の汚染、誘電材料への導電材料の望まれていない拡散、ショート回路や他のデバイスの乱れからデバイス不全さえ引き起こすことがある。
[0009]それ故、基板表面におけるサブミクロン特徴部における導電材料の無電解堆積のための方法及び組成物が求められている。
[0023]一態様においては、導電材料は、平坦化又は物質除去プロセス後、露出した導電材料上に不働態化層として堆積することができる。一実施形態においては、不働態化層は、貴金属の無電解堆積によって形成された開始層の使用によって堆積される。他の実施形態においては、開始層は、金属ホウ化物を形成するためにボラン含有溶液を用いて形成される。場合によっては、開始層を堆積又は形成する前に酸性前処理が使用し得る。無電解導電層は、メタライゼーションプロセスにおいてバリヤ層又はシード層として堆積し得る。他の態様においては、無電解導電層は、シリコン含有物質上に堆積され、金属シリサイド層を形成するためにアニールされる。コバルトやコバルト合金は、導電材料無電解堆積プロセスによって堆積される化合物の例である。
[0063]本明細書に記載されたプロセスの実施形態は、特徴部形成において不働態化層、バリヤ層、シード層、金属シリサイド層のために金属層と金属シリサイド層を堆積させることに関する。次の実施形態は、説明のために示され、本明細書に記載される本発明を制限するものとして解釈又は判断されるべきではない。
[0064]一態様においては、図2A-図2Dに示されるように、金属層が露出した特徴部上に不働態化層として堆積される。図2Aでは、基板200は特徴部250がその中に形成されて示されている。特徴部250は、慣用のフォトリソグラフィ法とエッチング法によってフォトレジスト物質を堆積しパターン形成して1種以上の誘電材料210中に特徴部の開口240を画成し、誘電材料210をエッチングしてアパーチャ240を画成することにより形成される。1種以上の誘電材料210としては、例えば、二酸化シリコン、リンドープされたシリコンガラス(PSG)、ホウ素-リン-ドープされたシリコンガラス(BPSG)、炭化シリコン、炭素ドープされた二酸化シリコン、及びフルオロシリコンガラス(FSG)、ポリイミドのようなポリマー、又はカリフォルニア州サンタクララのアプライドマテリアルズ社から入手できるブラックダイヤモンド(登録商標)のような炭素含有酸化シリコンを含む低誘電率材料が挙げられる。本発明は、また、1種以上の誘電材料210が、当該技術において既知又は不明の方法によって堆積されるポリシリコン、ドープされたポリシリコン、又はその組合わせを含む半導体のシリコン含有物質を含むことができることを企図する。
[0065]バリヤ層220は、誘電材料上に堆積される。バリヤ層220は、下にある基板又は誘電層へ続いて堆積された物質の拡散を防止又は阻止するために堆積することができる。適切なバリヤ層材料としては、高融点金属や高融点金属窒化物、例えば、タンタル(Ta)、窒化タンタル(TaNx)、チタン(Ti)、窒化チタン(TiNx)、タングステン(W)、窒化タングステン(WNx)、コバルト、コバルト-タングステン合金、コバルト-リン合金、コバルト-スズ合金、コバルト-タングステン-リン、コバルト-タングステン-ホウ素のようなコバルト合金、及びその組合わせが挙げられる。バリヤ層は、特に、化学気相堆積(CVD)、物理気相堆積(PVD)、無電解堆積法、又は分子線エピタキシー法により堆積させることができる。バリヤ層は、同様の手法又は組合わせの手法によって個々に又は連続して堆積した多層膜、例えば、いずれの層も物理気相堆積法によって堆積したタンタル層上に堆積した窒化タンタル層であってもよい。
[0066]次に、導電材料230を特徴部へ堆積することによりアパーチャ240が充填される。導電材料230は、例えば、銅又はタングステンを含めることができる。導電材料230は、化学気相堆積(CVD)、物理気相堆積(PVD)、電気めっきのような電気化学堆積法、又はその組み合わせによって堆積させることができ、例えば、銅は電気めっき法によって堆積される。場合によっては、導電材料のシード層(図示されていない)を、導電材料230の前に導電材料230の続いての堆積を核形成し増強するために堆積させることができる。
バリヤ/シード層堆積
[0073]一態様においては、無電解堆積処理によるシード層又はバリヤ層は、メタライゼーションプロセスで本明細書に記載される。
[0074]次の説明は、本明細書に記載されるプロセスによるシード層の堆積についてであり、本発明は、基板の誘電体表面を直接開始層を形成するための組成物をさらすことにより本明細書に記載される無電解プロセスによってバリヤ層を堆積することを企図する。開始層は、誘電体表面上に形成し、その上にコバルトのような金属層の堆積を可能にする。開始層は、露出した誘電体表面の上に連続又は不連続に形成することができる。例えば、パラジウムはコバルトバリヤ堆積のために誘電材料上に堆積され得る。コバルトがバリヤ層物質に用いられる場合には、シード層は銅材料であってもよい。
[0075]一態様においては、図3A-図3Dに示されるようにメタライゼーションスキームで本明細書に記載される無電解プロセスによってシード層が堆積される。図3Aにおいては、アパーチャ320が1種以上の誘電材料310中に形成された基板300が示されている。アパーチャ320は、慣用のフォトリソグラフィ法やエッチング法によってフォトレジスト物質を堆積しパターン形成して1種以上の誘電材料310中に特徴部開口を画成し、次に誘電材料310をエッチングしてアパーチャ320を画成することにより形成される。
[0076]1種以上の誘電材料310としては、例えば、二酸化シリコン、リンドープされたシリコンガラス(PSG)、ホウ素-リンドープされたシリコンガラス(BPSG)、炭化シリコン、カーボンドープされた二酸化シリコン、及びフルオロシリコンガラス(FSG)、ポリイミドのようなポリマー、及びカリフォルニア州サンタクララのアプライドマテリアルズ社から入手できるBlack Diamond(登録商標)のような炭素含有酸化シリコンを含む低誘電率物質が挙げられる。本発明は、また、層310が当該技術において既知又は不明の方法によって堆積されるポリシリコン、ドープされたポリシリコン、又はその組合わせを含む半導体のシリコン含有物質を含むことができることを企図する。
[0077]バリヤ層330は、図3Bに示されるようにアパーチャ320の中基板を形成する誘電材料の上に堆積される。バリヤ層330は、バリヤ層330の上に続いて堆積された物質の下にある基板又は誘電層へ拡散を防止又は阻止するために堆積することができる。適切なバリヤ層材料としては、高融点金属や高融点金属窒化物、例えば、タンタル(Ta)、窒化タンタル(TaNx)、チタン(Ti)、窒化チタン(TiNx)、タングステン(W)、窒化タングステン(WNx)、コバルト、コバルト-タングステン合金、コバルト-リン合金、コバルト-スズ合金、コバルト-タングステン-リン、コバルト-タングステン-ホウ素のようなコバルト合金、及びその組合わせが挙げられる。バリヤ層330は、特に、化学気相堆積(CVD)、物理気相堆積(PVD)、無電解堆積法、又は分子線エピタキシー法により堆積することができる。バリヤ層330は、同様の手法又は組合わせの手法によって個々に又は連続して堆積した多層膜、例えば、いずれの層も物理気相堆積法によって堆積したタンタル層上に堆積した窒化タンタル層であってもよい。
[0085]金属シリサイド層は、シリコン含有物質上に金属を堆積させ、金属とシリコン含有物質をアニールして金属シリサイド層を形成することにより形成することができる。金属シリサイドは、金属とシリコンの合金として本明細書に広く定義され、複数の原子価相に存在することができる。例えば、コバルトとシリコンは、CoSi相やCoSi2相内に存在し得る。金属シリサイド層を形成するアニーリングプロセスは、1以上のアニーリングステップにおいて行うことができ、堆積プロセスと同時に行うことができる。
Claims (40)
- 基板を処理する方法であって、
基板表面をpHが約7以下の第一無電解溶液にさらすことにより基板表面上に開始層を堆積させるステップと、
該第一無電解溶液の該基板表面を洗浄するステップと、
該開始層を第二無電解溶液にさらすことにより該開始層上に第二導電材料を堆積させるステップと、
を含む、前記方法。 - 該開始層が連続又は非連続である、請求項1記載の方法。
- 開始層を堆積させる前に、基板表面を研磨して誘電材料中に配置された第一導電材料をさらすステップと、
該基板表面を洗浄する前に該基板表面から酸化物を除去するステップと、
を更に含む、請求項1記載の方法。 - 該第一無電解溶液が貴金属塩と無機酸とを含み、ここで、該貴金属塩がパラジウム塩、白金塩、又はその組合わせを含み、塩化物、硫酸塩、スルファミン酸塩、又はその組合わせの群より選ばれ、該無機酸が塩酸、硫酸、フッ化水素酸、又はその組合わせの群より選ばれる、請求項1記載の方法。
- 該貴金属塩の濃度が無電解溶液の百万分の約20と1リットル当たり約20グラムの間にある、請求項4記載の方法。
- 該第一無電解溶液のpHが約1〜約3である、請求項4記載の方法。
- 該第一導電材料が銅であり、該開始層がパラジウム、白金、及びその組合わせの群より選ばれた貴金属を含み、該第二導電材料がコバルト又はコバルト合金を含み、ここで、該基板表面を貴金属塩、無機酸を有し且つpHが約1〜3である酸性無電解溶液にさらすことにより露出した銅特徴部上に該貴金属を選択的に堆積させる、請求項1記載の方法。
- 該基板表面が誘電材料とその中に形成されたアパーチャを含んでいる、請求項1記載の方法。
- 該第二導電材料上にシード層を堆積させるステップと、
該シード層上に第三導電材料を堆積させるステップと、
を更に含む、請求項8記載の方法。 - 該第二導電材料上に第三導電材料層を堆積させるステップを更に含む、請求項8記載の方法。
- 該基板表面が、その上に配置されたシリコン系導電材料をその中に形成されたパターン形成アパーチャと共に含んでいる、請求項1記載の方法。
- 該シリコン系導電材料と該第二導電材料を1種以上のアニーリングプロセスを用いて反応させることにより金属シリサイド層を形成するステップを更に含む、請求項11記載の方法。
- 該金属シリサイド層上に第三導電材料を堆積させるステップを更に含む、請求項12記載の方法。
- 1種以上の該アニーリングプロセスが、該基板を約300℃〜約900℃の温度でアニールして該金属シリサイド層を形成するステップを含む、請求項12記載の方法。
- 1種以上のアニーリングステップのいずれかの後に反応していない第二導電材料をエッチングするステップを更に含む、請求項12記載の方法。
- 該第三導電材料を堆積させる前に該第二導電材料上にバリヤ材料層を堆積させる、請求項12記載の方法。
- フッ化水素浸漬法又はプラズマエッチング法によって該基板表面を処理して酸化物形成を除去するステップを更に含む、請求項12記載の方法。
- 基板表面を研磨して誘電材料中に配置された第一導電材料をさらすステップと、
該基板表面を酸性溶液でエッチングするステップと、
該開始層を堆積させる前に該酸性溶液の該基板表面を洗浄するステップと、
を更に含む、請求項1記載の方法。 - 該酸性溶液が約0.2重量%〜約5重量%のフッ化水素酸を含んでいる、請求項18記載の方法。
- 該基板表面をエッチングする該ステップが、該基板表面を約0.2重量%〜約5重量%のフッ化水素酸を含んでいる酸性溶液に約15℃〜約60℃の温度で約300秒以内さらす工程を含んでいる、請求項18記載の方法。
- 基板を処理する方法であって、
基板表面を研磨して誘電材料に配置された第一導電材料をさらすステップと、
該基板表面をホウ素含有還元剤を含んでいる溶液にさらして露出した該第一導電材料上に開始部位を形成するステップと、
該基板表面を還元剤を含有する無電解溶液にさらすことにより該開始部位上に第二導電材料を堆積させるステップと、
を含む、前記方法。 - 該ホウ素含有還元剤が、アルカリ金属ボロヒドロリド、アルキルアミンボラン、又はその組合わせを含んでいる、請求項21記載の方法。
- 該溶液が、ナトリウムボロヒドリド、ジメチルアミンボラン、及びその組合わせの群より選ばれた約0.25g/l〜約6g/lのホウ素含有還元剤を含み、且つpHが約8〜約13である、請求項21記載の方法。
- 該還元剤が非ホウ素含有還元剤を含む、請求項21記載の方法。
- 該無電解溶液が、金属塩、界面活性剤、安定剤、錯化剤、又はその組合わせを更に含んでいる、請求項24記載の方法。
- 該非ホウ素含有還元剤が次亜リン酸ナトリウムを含んでいる、請求項24記載の方法。
- 該第一導電材料が銅、銅合金、コバルト、コバルト合金、及びその組合わせの群より選ばれ、該開始層がホウ化銅、ホウ化コバルト、又はその組合わせを含んでいる、請求項21記載の方法。
- 該ホウ素含有還元剤を含んでいる該溶液の該基板表面を洗浄するステップを更に含む、請求項21記載の方法。
- 誘電材料とその中に形成されたアパーチャを有する基板を処理する方法であって、
該基板表面をホウ素含有還元剤を含む溶液ですすいで該誘電材料とその中に形成されたアパーチャ上に開始層を形成するステップと、
還元剤を含有する無電解プロセスによって該開始層上に第一導電材料を堆積させるステップと、
を含む、前記方法。 - 該第一導電材料上にシード層を堆積させるステップと、
該シード層上に第二導電材料層を堆積させるステップと、
を更に含む、請求項29記載の方法。 - 該第一導電材料上に第二導電材料層を堆積させるステップを更に含む、請求項29記載の方法。
- 該ホウ素含有還元剤がアルカリ金属ボロヒドロリド、アルキルアミンボラン、又はその組合わせを含んでいる、請求項29記載の方法。
- 該溶液が、ナトリウムボロヒドリド、ジメチルアミンボラン、及びその組合わせの群より選ばれた約0.25g/l〜約6g/lのホウ素含有還元剤を含み、且つpHが約8〜約13である、請求項29記載の方法。
- 該還元剤が非ホウ素含有還元剤を含んでいる、請求項29記載の方法。
- 該無電解溶液が、金属塩、界面活性剤、安定剤、錯化剤、又はその組合わせを更に含んでいる、請求項34記載の方法。
- 該非ホウ素含有還元剤が次亜リン酸ナトリウムを含んでいる、請求項34記載の方法。
- 該第一導電材料が銅、銅合金、コバルト、コバルト合金、及びその組合わせの群より選ばれ、該開始層がホウ化銅、ホウ化コバルト、又はその組合わせを含む、請求項29記載の方法。
- 該第一導電材料、該シード層、又は該第二導電材料を堆積させる前にバリヤ層を堆積させるステップを更に含む、請求項30記載の方法。
- 該基板が、その上に配置されたシリコン系導電材料とその中に形成されたパターン形成されたアパーチャを含み、該方法が
ホウ素含有還元剤を含む該溶液の該基板表面を洗浄するステップと、
該シリコン系導電材料と該第一導電材料を1種以上のアニーリングプロセスを用いて反応させることにより金属シリサイド層を形成するステップと、
を更に含む、請求項29記載の方法。 - 該基板表面をフッ化水素浸漬法又はプラズマエッチング法によって処理して酸化物形成を除去するステップを更に含む、請求項21記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/117,711 US6899816B2 (en) | 2002-04-03 | 2002-04-03 | Electroless deposition method |
US10/117,712 US6905622B2 (en) | 2002-04-03 | 2002-04-03 | Electroless deposition method |
US10/117,710 US20030190426A1 (en) | 2002-04-03 | 2002-04-03 | Electroless deposition method |
PCT/US2003/010073 WO2003085166A2 (en) | 2002-04-03 | 2003-04-02 | Electroless deposition methods |
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Cited By (3)
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JP2008034633A (ja) * | 2006-07-28 | 2008-02-14 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2018073949A (ja) * | 2016-10-27 | 2018-05-10 | 東京エレクトロン株式会社 | 金属配線層形成方法、金属配線層形成装置および記憶媒体 |
WO2018135325A1 (ja) * | 2017-01-19 | 2018-07-26 | 富士通株式会社 | 電子部品、電子部品の製造方法及び電子装置 |
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US7332193B2 (en) * | 2004-10-18 | 2008-02-19 | Enthone, Inc. | Cobalt and nickel electroless plating in microelectronic devices |
WO2007003223A1 (en) * | 2005-07-04 | 2007-01-11 | Freescale Semiconductor, Inc. | Method and apparatus for forming a noble metal layer, notably on inlaid metal features |
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WO2003085166A2 (en) | 2003-10-16 |
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