JPS57120663A - Electroless plating method - Google Patents

Electroless plating method

Info

Publication number
JPS57120663A
JPS57120663A JP487081A JP487081A JPS57120663A JP S57120663 A JPS57120663 A JP S57120663A JP 487081 A JP487081 A JP 487081A JP 487081 A JP487081 A JP 487081A JP S57120663 A JPS57120663 A JP S57120663A
Authority
JP
Japan
Prior art keywords
soln
substrate
dipped
electroless plating
inorg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP487081A
Other languages
Japanese (ja)
Other versions
JPS6133905B2 (en
Inventor
Yoshihiro Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP487081A priority Critical patent/JPS57120663A/en
Publication of JPS57120663A publication Critical patent/JPS57120663A/en
Publication of JPS6133905B2 publication Critical patent/JPS6133905B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Surface Treatment Of Glass (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

PURPOSE: To obtain a plated film with superior adhesion by treating an insulator having an n type semiconductor as a substrate to be plated with an inorg. acid under prescribed conditions, an SnCl2 soln. and a PdCl2 soln. in succession.
CONSTITUTION: A layer of an n type semiconductor such as SnO2, In2O3 or TiO2 is formed on a substrate of an insulator such as glass, ceramics or a crystal body. This substrate is dipped in ≥0.01N inorg. acid contg. ≥0.05wt% NH4F at ≥50°C. It is then dipped in an SnCl2 soln. acidified with hydrochloric acid, washed in water, further dipped in a PdCl2 soln., washed in water, and dried. The resulting substrate is immersed in a prescribed electroless plating soln. to obtain a plated film with superior adhesion.
COPYRIGHT: (C)1982,JPO&Japio
JP487081A 1981-01-16 1981-01-16 Electroless plating method Granted JPS57120663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP487081A JPS57120663A (en) 1981-01-16 1981-01-16 Electroless plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP487081A JPS57120663A (en) 1981-01-16 1981-01-16 Electroless plating method

Publications (2)

Publication Number Publication Date
JPS57120663A true JPS57120663A (en) 1982-07-27
JPS6133905B2 JPS6133905B2 (en) 1986-08-05

Family

ID=11595703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP487081A Granted JPS57120663A (en) 1981-01-16 1981-01-16 Electroless plating method

Country Status (1)

Country Link
JP (1) JPS57120663A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005227618A (en) * 2004-02-13 2005-08-25 Semiconductor Energy Lab Co Ltd Light emitting device and manufacturing method thereof
JP2005536628A (en) * 2002-04-03 2005-12-02 アプライド　マテリアルズ　インコーポレイテッド Electroless deposition method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0437204Y2 (en) * 1985-05-15 1992-09-02
JPH0511283Y2 (en) * 1986-08-08 1993-03-19

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005536628A (en) * 2002-04-03 2005-12-02 アプライド　マテリアルズ　インコーポレイテッド Electroless deposition method
JP2005227618A (en) * 2004-02-13 2005-08-25 Semiconductor Energy Lab Co Ltd Light emitting device and manufacturing method thereof
JP4566575B2 (en) * 2004-02-13 2010-10-20 株式会社半導体エネルギー研究所 Method for manufacturing light emitting device

Also Published As

Publication number Publication date
JPS6133905B2 (en) 1986-08-05

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