JP2025504149A5 - - Google Patents
Info
- Publication number
- JP2025504149A5 JP2025504149A5 JP2024546253A JP2024546253A JP2025504149A5 JP 2025504149 A5 JP2025504149 A5 JP 2025504149A5 JP 2024546253 A JP2024546253 A JP 2024546253A JP 2024546253 A JP2024546253 A JP 2024546253A JP 2025504149 A5 JP2025504149 A5 JP 2025504149A5
- Authority
- JP
- Japan
- Prior art keywords
- approximately
- temperature
- iii
- metal
- chlorinating agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263267499P | 2022-02-03 | 2022-02-03 | |
| US63/267,499 | 2022-02-03 | ||
| PCT/US2023/061709 WO2023150520A1 (en) | 2022-02-03 | 2023-02-01 | Atomic layer etching of metals using co-reactants as halogenating agents |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025504149A JP2025504149A (ja) | 2025-02-06 |
| JP2025504149A5 true JP2025504149A5 (https=) | 2025-12-05 |
Family
ID=85462410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024546253A Pending JP2025504149A (ja) | 2022-02-03 | 2023-02-01 | ハロゲン化剤として共反応体を用いた金属の原子層エッチング |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250109501A1 (https=) |
| JP (1) | JP2025504149A (https=) |
| KR (1) | KR20240154003A (https=) |
| CN (1) | CN118648092A (https=) |
| TW (1) | TW202338158A (https=) |
| WO (1) | WO2023150520A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN121153106A (zh) * | 2023-04-14 | 2025-12-16 | 弗萨姆材料美国有限责任公司 | 含金属材料的气相蚀刻 |
| US20260107718A1 (en) * | 2024-10-14 | 2026-04-16 | Tokyo Electron Limited | Methods for conditioning a surface prior to etching to optimize etch performance |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102805391B1 (ko) * | 2016-12-09 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | 열적 원자층 식각 공정 |
| US10283319B2 (en) * | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| CN113316839B (zh) * | 2019-01-15 | 2025-09-12 | 朗姆研究公司 | 利用无金属配体的金属原子层蚀刻及沉积设备和处理 |
-
2023
- 2023-02-01 CN CN202380019999.1A patent/CN118648092A/zh active Pending
- 2023-02-01 JP JP2024546253A patent/JP2025504149A/ja active Pending
- 2023-02-01 KR KR1020247029472A patent/KR20240154003A/ko active Pending
- 2023-02-01 TW TW112103477A patent/TW202338158A/zh unknown
- 2023-02-01 WO PCT/US2023/061709 patent/WO2023150520A1/en not_active Ceased
- 2023-02-01 US US18/728,534 patent/US20250109501A1/en active Pending
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