KR20240154003A - 할로겐화제로서 공반응물을 이용하는 금속의 원자층 에칭 - Google Patents

할로겐화제로서 공반응물을 이용하는 금속의 원자층 에칭 Download PDF

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Publication number
KR20240154003A
KR20240154003A KR1020247029472A KR20247029472A KR20240154003A KR 20240154003 A KR20240154003 A KR 20240154003A KR 1020247029472 A KR1020247029472 A KR 1020247029472A KR 20247029472 A KR20247029472 A KR 20247029472A KR 20240154003 A KR20240154003 A KR 20240154003A
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KR
South Korea
Prior art keywords
temperature
iii
cycles
socl
metal
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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KR1020247029472A
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English (en)
Korean (ko)
Inventor
라빈드라 칸졸리아
제이콥 우드러프
만수르 모인푸어
찰스 데젤라
홀거 사레
웬이 시에
그레고리 파슨스
마틴 맥브리아티
Original Assignee
메르크 파텐트 게엠베하
노쓰 캐롤라이나 스테이트 유니버시티
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Application filed by 메르크 파텐트 게엠베하, 노쓰 캐롤라이나 스테이트 유니버시티 filed Critical 메르크 파텐트 게엠베하
Publication of KR20240154003A publication Critical patent/KR20240154003A/ko
Pending legal-status Critical Current

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Classifications

    • H01L21/32135—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020247029472A 2022-02-03 2023-02-01 할로겐화제로서 공반응물을 이용하는 금속의 원자층 에칭 Pending KR20240154003A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263267499P 2022-02-03 2022-02-03
US63/267,499 2022-02-03
PCT/US2023/061709 WO2023150520A1 (en) 2022-02-03 2023-02-01 Atomic layer etching of metals using co-reactants as halogenating agents

Publications (1)

Publication Number Publication Date
KR20240154003A true KR20240154003A (ko) 2024-10-24

Family

ID=85462410

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247029472A Pending KR20240154003A (ko) 2022-02-03 2023-02-01 할로겐화제로서 공반응물을 이용하는 금속의 원자층 에칭

Country Status (6)

Country Link
US (1) US20250109501A1 (https=)
JP (1) JP2025504149A (https=)
KR (1) KR20240154003A (https=)
CN (1) CN118648092A (https=)
TW (1) TW202338158A (https=)
WO (1) WO2023150520A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121153106A (zh) * 2023-04-14 2025-12-16 弗萨姆材料美国有限责任公司 含金属材料的气相蚀刻
US20260107718A1 (en) * 2024-10-14 2026-04-16 Tokyo Electron Limited Methods for conditioning a surface prior to etching to optimize etch performance

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102805391B1 (ko) * 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
CN113316839B (zh) * 2019-01-15 2025-09-12 朗姆研究公司 利用无金属配体的金属原子层蚀刻及沉积设备和处理

Also Published As

Publication number Publication date
US20250109501A1 (en) 2025-04-03
TW202338158A (zh) 2023-10-01
JP2025504149A (ja) 2025-02-06
CN118648092A (zh) 2024-09-13
WO2023150520A1 (en) 2023-08-10

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