TW202338158A - 使用新穎共反應物作為鹵化劑之金屬原子層蝕刻 - Google Patents

使用新穎共反應物作為鹵化劑之金屬原子層蝕刻 Download PDF

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Publication number
TW202338158A
TW202338158A TW112103477A TW112103477A TW202338158A TW 202338158 A TW202338158 A TW 202338158A TW 112103477 A TW112103477 A TW 112103477A TW 112103477 A TW112103477 A TW 112103477A TW 202338158 A TW202338158 A TW 202338158A
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TW
Taiwan
Prior art keywords
temperature
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request item
loops
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Application number
TW112103477A
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English (en)
Chinese (zh)
Inventor
拉文朵拉 坎婕莉亞
傑可布 伍德洛夫
曼紹爾 孟印波爾
察爾斯 得茲拉
霍爾格 薩拉
穩儀 謝
葛格里 帕森斯
Original Assignee
德商馬克專利公司
美國北卡羅萊那州立大學
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 德商馬克專利公司, 美國北卡羅萊那州立大學 filed Critical 德商馬克專利公司
Publication of TW202338158A publication Critical patent/TW202338158A/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
TW112103477A 2022-02-03 2023-02-01 使用新穎共反應物作為鹵化劑之金屬原子層蝕刻 TW202338158A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202263267499P 2022-02-03 2022-02-03
US63/267,499 2022-02-03

Publications (1)

Publication Number Publication Date
TW202338158A true TW202338158A (zh) 2023-10-01

Family

ID=85462410

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112103477A TW202338158A (zh) 2022-02-03 2023-02-01 使用新穎共反應物作為鹵化劑之金屬原子層蝕刻

Country Status (6)

Country Link
US (1) US20250109501A1 (https=)
JP (1) JP2025504149A (https=)
KR (1) KR20240154003A (https=)
CN (1) CN118648092A (https=)
TW (1) TW202338158A (https=)
WO (1) WO2023150520A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121153106A (zh) * 2023-04-14 2025-12-16 弗萨姆材料美国有限责任公司 含金属材料的气相蚀刻
US20260107718A1 (en) * 2024-10-14 2026-04-16 Tokyo Electron Limited Methods for conditioning a surface prior to etching to optimize etch performance

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102805391B1 (ko) * 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
CN113316839B (zh) * 2019-01-15 2025-09-12 朗姆研究公司 利用无金属配体的金属原子层蚀刻及沉积设备和处理

Also Published As

Publication number Publication date
US20250109501A1 (en) 2025-04-03
JP2025504149A (ja) 2025-02-06
CN118648092A (zh) 2024-09-13
WO2023150520A1 (en) 2023-08-10
KR20240154003A (ko) 2024-10-24

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