JP2025504149A - ハロゲン化剤として共反応体を用いた金属の原子層エッチング - Google Patents

ハロゲン化剤として共反応体を用いた金属の原子層エッチング Download PDF

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Publication number
JP2025504149A
JP2025504149A JP2024546253A JP2024546253A JP2025504149A JP 2025504149 A JP2025504149 A JP 2025504149A JP 2024546253 A JP2024546253 A JP 2024546253A JP 2024546253 A JP2024546253 A JP 2024546253A JP 2025504149 A JP2025504149 A JP 2025504149A
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Japan
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temperature
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metal
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Pending
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JP2024546253A
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English (en)
Japanese (ja)
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JP2025504149A5 (https=
Inventor
カンジョリア・ラヴィンドラ
ウッドラフ・ジェイコブ
モインプール・マンスール
デゼラー・チャールズ
サーレ・ホルガー
シエ・ウェンイー
パーソンズ・グレゴリー
マクブライアーティ・マーティン
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Merck Patent GmbH
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Merck Patent GmbH
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Publication of JP2025504149A publication Critical patent/JP2025504149A/ja
Publication of JP2025504149A5 publication Critical patent/JP2025504149A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2024546253A 2022-02-03 2023-02-01 ハロゲン化剤として共反応体を用いた金属の原子層エッチング Pending JP2025504149A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263267499P 2022-02-03 2022-02-03
US63/267,499 2022-02-03
PCT/US2023/061709 WO2023150520A1 (en) 2022-02-03 2023-02-01 Atomic layer etching of metals using co-reactants as halogenating agents

Publications (2)

Publication Number Publication Date
JP2025504149A true JP2025504149A (ja) 2025-02-06
JP2025504149A5 JP2025504149A5 (https=) 2025-12-05

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ID=85462410

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Application Number Title Priority Date Filing Date
JP2024546253A Pending JP2025504149A (ja) 2022-02-03 2023-02-01 ハロゲン化剤として共反応体を用いた金属の原子層エッチング

Country Status (6)

Country Link
US (1) US20250109501A1 (https=)
JP (1) JP2025504149A (https=)
KR (1) KR20240154003A (https=)
CN (1) CN118648092A (https=)
TW (1) TW202338158A (https=)
WO (1) WO2023150520A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121153106A (zh) * 2023-04-14 2025-12-16 弗萨姆材料美国有限责任公司 含金属材料的气相蚀刻
US20260107718A1 (en) * 2024-10-14 2026-04-16 Tokyo Electron Limited Methods for conditioning a surface prior to etching to optimize etch performance

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102805391B1 (ko) * 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
CN113316839B (zh) * 2019-01-15 2025-09-12 朗姆研究公司 利用无金属配体的金属原子层蚀刻及沉积设备和处理

Also Published As

Publication number Publication date
US20250109501A1 (en) 2025-04-03
TW202338158A (zh) 2023-10-01
CN118648092A (zh) 2024-09-13
WO2023150520A1 (en) 2023-08-10
KR20240154003A (ko) 2024-10-24

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