CN118648092A - 使用共反应物作为卤化剂的金属的原子层蚀刻 - Google Patents

使用共反应物作为卤化剂的金属的原子层蚀刻 Download PDF

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Publication number
CN118648092A
CN118648092A CN202380019999.1A CN202380019999A CN118648092A CN 118648092 A CN118648092 A CN 118648092A CN 202380019999 A CN202380019999 A CN 202380019999A CN 118648092 A CN118648092 A CN 118648092A
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CN
China
Prior art keywords
temperature
iii
cycles
metal
seconds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380019999.1A
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English (en)
Chinese (zh)
Inventor
R·坎乔利亚
J·伍德拉夫
M·蒙普尔
C·德泽拉赫
H·萨莱
谢稳仪
G·帕森斯
M·麦克布利亚蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
North Carolina State University
Original Assignee
Merck Patent GmbH
North Carolina State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH, North Carolina State University filed Critical Merck Patent GmbH
Publication of CN118648092A publication Critical patent/CN118648092A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
CN202380019999.1A 2022-02-03 2023-02-01 使用共反应物作为卤化剂的金属的原子层蚀刻 Pending CN118648092A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263267499P 2022-02-03 2022-02-03
US63/267,499 2022-02-03
PCT/US2023/061709 WO2023150520A1 (en) 2022-02-03 2023-02-01 Atomic layer etching of metals using co-reactants as halogenating agents

Publications (1)

Publication Number Publication Date
CN118648092A true CN118648092A (zh) 2024-09-13

Family

ID=85462410

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380019999.1A Pending CN118648092A (zh) 2022-02-03 2023-02-01 使用共反应物作为卤化剂的金属的原子层蚀刻

Country Status (6)

Country Link
US (1) US20250109501A1 (https=)
JP (1) JP2025504149A (https=)
KR (1) KR20240154003A (https=)
CN (1) CN118648092A (https=)
TW (1) TW202338158A (https=)
WO (1) WO2023150520A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121153106A (zh) * 2023-04-14 2025-12-16 弗萨姆材料美国有限责任公司 含金属材料的气相蚀刻
US20260107718A1 (en) * 2024-10-14 2026-04-16 Tokyo Electron Limited Methods for conditioning a surface prior to etching to optimize etch performance

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102805391B1 (ko) * 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
CN113316839B (zh) * 2019-01-15 2025-09-12 朗姆研究公司 利用无金属配体的金属原子层蚀刻及沉积设备和处理

Also Published As

Publication number Publication date
US20250109501A1 (en) 2025-04-03
TW202338158A (zh) 2023-10-01
JP2025504149A (ja) 2025-02-06
WO2023150520A1 (en) 2023-08-10
KR20240154003A (ko) 2024-10-24

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