JPWO2023188755A5 - - Google Patents
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- Publication number
- JPWO2023188755A5 JPWO2023188755A5 JP2024511306A JP2024511306A JPWO2023188755A5 JP WO2023188755 A5 JPWO2023188755 A5 JP WO2023188755A5 JP 2024511306 A JP2024511306 A JP 2024511306A JP 2024511306 A JP2024511306 A JP 2024511306A JP WO2023188755 A5 JPWO2023188755 A5 JP WO2023188755A5
- Authority
- JP
- Japan
- Prior art keywords
- source
- semiconductor device
- trench
- semiconductor layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 32
- 210000000746 body region Anatomy 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022051509 | 2022-03-28 | ||
| PCT/JP2023/002429 WO2023188755A1 (ja) | 2022-03-28 | 2023-01-26 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023188755A1 JPWO2023188755A1 (https=) | 2023-10-05 |
| JPWO2023188755A5 true JPWO2023188755A5 (https=) | 2024-12-09 |
Family
ID=88200244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511306A Pending JPWO2023188755A1 (https=) | 2022-03-28 | 2023-01-26 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250015151A1 (https=) |
| JP (1) | JPWO2023188755A1 (https=) |
| CN (1) | CN118922948A (https=) |
| WO (1) | WO2023188755A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120261746A1 (en) * | 2011-03-14 | 2012-10-18 | Maxpower Semiconductor, Inc. | Double-Trench Vertical Devices and Methods with Self-Alignment Between Gate and Body Contact |
| US20130164895A1 (en) * | 2011-12-12 | 2013-06-27 | Maxpower Semiconductor, Inc. | Trench-Gated Power Devices with Two Types of Trenches and Reliable Polycidation |
| US11257944B2 (en) * | 2015-04-27 | 2022-02-22 | Rohm Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
| JP6666671B2 (ja) * | 2015-08-24 | 2020-03-18 | ローム株式会社 | 半導体装置 |
-
2023
- 2023-01-26 JP JP2024511306A patent/JPWO2023188755A1/ja active Pending
- 2023-01-26 WO PCT/JP2023/002429 patent/WO2023188755A1/ja not_active Ceased
- 2023-01-26 CN CN202380029911.4A patent/CN118922948A/zh active Pending
-
2024
- 2024-09-20 US US18/890,814 patent/US20250015151A1/en active Pending
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