JPWO2021210464A5 - - Google Patents

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Publication number
JPWO2021210464A5
JPWO2021210464A5 JP2022515327A JP2022515327A JPWO2021210464A5 JP WO2021210464 A5 JPWO2021210464 A5 JP WO2021210464A5 JP 2022515327 A JP2022515327 A JP 2022515327A JP 2022515327 A JP2022515327 A JP 2022515327A JP WO2021210464 A5 JPWO2021210464 A5 JP WO2021210464A5
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JP
Japan
Prior art keywords
semiconductor laser
conductor
electrode
type semiconductor
conductive film
Prior art date
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Application number
JP2022515327A
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English (en)
Japanese (ja)
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JP7660560B2 (ja
JPWO2021210464A1 (https=
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Priority claimed from PCT/JP2021/014743 external-priority patent/WO2021210464A1/ja
Publication of JPWO2021210464A1 publication Critical patent/JPWO2021210464A1/ja
Publication of JPWO2021210464A5 publication Critical patent/JPWO2021210464A5/ja
Application granted granted Critical
Publication of JP7660560B2 publication Critical patent/JP7660560B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022515327A 2020-04-16 2021-04-07 アレー型半導体レーザ装置 Active JP7660560B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020073278 2020-04-16
JP2020073278 2020-04-16
PCT/JP2021/014743 WO2021210464A1 (ja) 2020-04-16 2021-04-07 アレー型半導体レーザ装置

Publications (3)

Publication Number Publication Date
JPWO2021210464A1 JPWO2021210464A1 (https=) 2021-10-21
JPWO2021210464A5 true JPWO2021210464A5 (https=) 2023-01-04
JP7660560B2 JP7660560B2 (ja) 2025-04-11

Family

ID=78084950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022515327A Active JP7660560B2 (ja) 2020-04-16 2021-04-07 アレー型半導体レーザ装置

Country Status (3)

Country Link
US (1) US20230054731A1 (https=)
JP (1) JP7660560B2 (https=)
WO (1) WO2021210464A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2910914B2 (ja) * 1995-12-14 1999-06-23 日本電気株式会社 半導体レーザアレイ
JP3336599B2 (ja) * 1996-03-11 2002-10-21 日亜化学工業株式会社 窒化物半導体レーザ素子
JP4155368B2 (ja) * 1998-03-19 2008-09-24 日本オプネクスト株式会社 半導体レーザアレイ素子
JP3348024B2 (ja) * 1998-08-17 2002-11-20 松下電器産業株式会社 半導体レーザ装置
JP2008244440A (ja) * 2007-02-13 2008-10-09 Matsushita Electric Ind Co Ltd 半導体レーザ装置及び画像表示装置
JP5043495B2 (ja) * 2007-04-24 2012-10-10 浜松ホトニクス株式会社 半導体発光素子
JP2013250441A (ja) * 2012-05-31 2013-12-12 Sumitomo Electric Device Innovations Inc 光学デバイスおよび伝送線路
JP6502797B2 (ja) * 2015-08-31 2019-04-17 日本オクラロ株式会社 光モジュール
EP3499559B1 (en) 2016-08-10 2023-11-22 Kyocera Corporation Package for mounting electrical element, array package and electrical device
CN106848835B (zh) 2016-12-22 2020-04-28 华中科技大学 一种基于表面光栅的dfb激光器
US11172571B2 (en) * 2018-02-16 2021-11-09 Kyocera Corporation Multipiece element storage package and multipiece optical semiconductor device

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