JP7660560B2 - アレー型半導体レーザ装置 - Google Patents
アレー型半導体レーザ装置 Download PDFInfo
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- JP7660560B2 JP7660560B2 JP2022515327A JP2022515327A JP7660560B2 JP 7660560 B2 JP7660560 B2 JP 7660560B2 JP 2022515327 A JP2022515327 A JP 2022515327A JP 2022515327 A JP2022515327 A JP 2022515327A JP 7660560 B2 JP7660560 B2 JP 7660560B2
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- electrode
- semiconductor laser
- conductive film
- conductor
- type semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 996
- 239000004020 conductor Substances 0.000 claims description 227
- 239000000758 substrate Substances 0.000 claims description 87
- 239000002184 metal Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 230000000149 penetrating effect Effects 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 description 80
- 230000004048 modification Effects 0.000 description 76
- 238000012986 modification Methods 0.000 description 76
- 229910000679 solder Inorganic materials 0.000 description 20
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 15
- 238000007747 plating Methods 0.000 description 14
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 238000009429 electrical wiring Methods 0.000 description 8
- 230000005611 electricity Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- -1 GaAsP Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020073278 | 2020-04-16 | ||
| JP2020073278 | 2020-04-16 | ||
| PCT/JP2021/014743 WO2021210464A1 (ja) | 2020-04-16 | 2021-04-07 | アレー型半導体レーザ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021210464A1 JPWO2021210464A1 (https=) | 2021-10-21 |
| JPWO2021210464A5 JPWO2021210464A5 (https=) | 2023-01-04 |
| JP7660560B2 true JP7660560B2 (ja) | 2025-04-11 |
Family
ID=78084950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022515327A Active JP7660560B2 (ja) | 2020-04-16 | 2021-04-07 | アレー型半導体レーザ装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20230054731A1 (https=) |
| JP (1) | JP7660560B2 (https=) |
| WO (1) | WO2021210464A1 (https=) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008244440A (ja) | 2007-02-13 | 2008-10-09 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置及び画像表示装置 |
| JP2008270667A (ja) | 2007-04-24 | 2008-11-06 | Hamamatsu Photonics Kk | 半導体発光素子 |
| JP2013250441A (ja) | 2012-05-31 | 2013-12-12 | Sumitomo Electric Device Innovations Inc | 光学デバイスおよび伝送線路 |
| WO2018030486A1 (ja) | 2016-08-10 | 2018-02-15 | 京セラ株式会社 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
| WO2019160062A1 (ja) | 2018-02-16 | 2019-08-22 | 京セラ株式会社 | 多数個取り素子収納用パッケージおよび多数個取り光半導体装置 |
| US20190319426A1 (en) | 2016-12-22 | 2019-10-17 | Weihua Guo | Distributed feedback laser based on surface grating |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2910914B2 (ja) * | 1995-12-14 | 1999-06-23 | 日本電気株式会社 | 半導体レーザアレイ |
| JP3336599B2 (ja) * | 1996-03-11 | 2002-10-21 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| JP4155368B2 (ja) * | 1998-03-19 | 2008-09-24 | 日本オプネクスト株式会社 | 半導体レーザアレイ素子 |
| JP3348024B2 (ja) * | 1998-08-17 | 2002-11-20 | 松下電器産業株式会社 | 半導体レーザ装置 |
| JP6502797B2 (ja) * | 2015-08-31 | 2019-04-17 | 日本オクラロ株式会社 | 光モジュール |
-
2021
- 2021-04-07 JP JP2022515327A patent/JP7660560B2/ja active Active
- 2021-04-07 WO PCT/JP2021/014743 patent/WO2021210464A1/ja not_active Ceased
-
2022
- 2022-10-11 US US18/045,699 patent/US20230054731A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008244440A (ja) | 2007-02-13 | 2008-10-09 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置及び画像表示装置 |
| JP2008270667A (ja) | 2007-04-24 | 2008-11-06 | Hamamatsu Photonics Kk | 半導体発光素子 |
| JP2013250441A (ja) | 2012-05-31 | 2013-12-12 | Sumitomo Electric Device Innovations Inc | 光学デバイスおよび伝送線路 |
| WO2018030486A1 (ja) | 2016-08-10 | 2018-02-15 | 京セラ株式会社 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
| US20190319426A1 (en) | 2016-12-22 | 2019-10-17 | Weihua Guo | Distributed feedback laser based on surface grating |
| WO2019160062A1 (ja) | 2018-02-16 | 2019-08-22 | 京セラ株式会社 | 多数個取り素子収納用パッケージおよび多数個取り光半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20230054731A1 (en) | 2023-02-23 |
| JPWO2021210464A1 (https=) | 2021-10-21 |
| WO2021210464A1 (ja) | 2021-10-21 |
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