JPWO2021210464A1 - - Google Patents

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Publication number
JPWO2021210464A1
JPWO2021210464A1 JP2022515327A JP2022515327A JPWO2021210464A1 JP WO2021210464 A1 JPWO2021210464 A1 JP WO2021210464A1 JP 2022515327 A JP2022515327 A JP 2022515327A JP 2022515327 A JP2022515327 A JP 2022515327A JP WO2021210464 A1 JPWO2021210464 A1 JP WO2021210464A1
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JP
Japan
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Application number
JP2022515327A
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Japanese (ja)
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JP7660560B2 (ja
JPWO2021210464A5 (https=
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Publication of JPWO2021210464A1 publication Critical patent/JPWO2021210464A1/ja
Publication of JPWO2021210464A5 publication Critical patent/JPWO2021210464A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2022515327A 2020-04-16 2021-04-07 アレー型半導体レーザ装置 Active JP7660560B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020073278 2020-04-16
JP2020073278 2020-04-16
PCT/JP2021/014743 WO2021210464A1 (ja) 2020-04-16 2021-04-07 アレー型半導体レーザ装置

Publications (3)

Publication Number Publication Date
JPWO2021210464A1 true JPWO2021210464A1 (https=) 2021-10-21
JPWO2021210464A5 JPWO2021210464A5 (https=) 2023-01-04
JP7660560B2 JP7660560B2 (ja) 2025-04-11

Family

ID=78084950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022515327A Active JP7660560B2 (ja) 2020-04-16 2021-04-07 アレー型半導体レーザ装置

Country Status (3)

Country Link
US (1) US20230054731A1 (https=)
JP (1) JP7660560B2 (https=)
WO (1) WO2021210464A1 (https=)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09167878A (ja) * 1995-12-14 1997-06-24 Nec Corp 半導体レーザアレイ
JPH09246651A (ja) * 1996-03-11 1997-09-19 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH11274634A (ja) * 1998-03-19 1999-10-08 Hitachi Ltd 半導体レーザアレイ素子および半導体レーザアレイ装置
JP2000058965A (ja) * 1998-08-17 2000-02-25 Matsushita Electric Ind Co Ltd 半導体レーザ装置及び半導体レーザ素子
JP2008244440A (ja) * 2007-02-13 2008-10-09 Matsushita Electric Ind Co Ltd 半導体レーザ装置及び画像表示装置
JP2008270667A (ja) * 2007-04-24 2008-11-06 Hamamatsu Photonics Kk 半導体発光素子
JP2013250441A (ja) * 2012-05-31 2013-12-12 Sumitomo Electric Device Innovations Inc 光学デバイスおよび伝送線路
JP2017050357A (ja) * 2015-08-31 2017-03-09 日本オクラロ株式会社 光モジュール
WO2018030486A1 (ja) * 2016-08-10 2018-02-15 京セラ株式会社 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置
WO2019160062A1 (ja) * 2018-02-16 2019-08-22 京セラ株式会社 多数個取り素子収納用パッケージおよび多数個取り光半導体装置
US20190319426A1 (en) * 2016-12-22 2019-10-17 Weihua Guo Distributed feedback laser based on surface grating

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09167878A (ja) * 1995-12-14 1997-06-24 Nec Corp 半導体レーザアレイ
JPH09246651A (ja) * 1996-03-11 1997-09-19 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH11274634A (ja) * 1998-03-19 1999-10-08 Hitachi Ltd 半導体レーザアレイ素子および半導体レーザアレイ装置
JP2000058965A (ja) * 1998-08-17 2000-02-25 Matsushita Electric Ind Co Ltd 半導体レーザ装置及び半導体レーザ素子
JP2008244440A (ja) * 2007-02-13 2008-10-09 Matsushita Electric Ind Co Ltd 半導体レーザ装置及び画像表示装置
JP2008270667A (ja) * 2007-04-24 2008-11-06 Hamamatsu Photonics Kk 半導体発光素子
JP2013250441A (ja) * 2012-05-31 2013-12-12 Sumitomo Electric Device Innovations Inc 光学デバイスおよび伝送線路
JP2017050357A (ja) * 2015-08-31 2017-03-09 日本オクラロ株式会社 光モジュール
WO2018030486A1 (ja) * 2016-08-10 2018-02-15 京セラ株式会社 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置
US20190319426A1 (en) * 2016-12-22 2019-10-17 Weihua Guo Distributed feedback laser based on surface grating
WO2019160062A1 (ja) * 2018-02-16 2019-08-22 京セラ株式会社 多数個取り素子収納用パッケージおよび多数個取り光半導体装置

Also Published As

Publication number Publication date
US20230054731A1 (en) 2023-02-23
JP7660560B2 (ja) 2025-04-11
WO2021210464A1 (ja) 2021-10-21

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