JPWO2021199420A1 - - Google Patents

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Publication number
JPWO2021199420A1
JPWO2021199420A1 JP2021508331A JP2021508331A JPWO2021199420A1 JP WO2021199420 A1 JPWO2021199420 A1 JP WO2021199420A1 JP 2021508331 A JP2021508331 A JP 2021508331A JP 2021508331 A JP2021508331 A JP 2021508331A JP WO2021199420 A1 JPWO2021199420 A1 JP WO2021199420A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021508331A
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JP7116248B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2021199420A1 publication Critical patent/JPWO2021199420A1/ja
Application granted granted Critical
Publication of JP7116248B2 publication Critical patent/JP7116248B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
JP2021508331A 2020-04-03 2020-04-03 プラズマ処理装置およびプラズマ処理方法 Active JP7116248B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/015292 WO2021199420A1 (ja) 2020-04-03 2020-04-03 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
JPWO2021199420A1 true JPWO2021199420A1 (ja) 2021-10-07
JP7116248B2 JP7116248B2 (ja) 2022-08-09

Family

ID=77929951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021508331A Active JP7116248B2 (ja) 2020-04-03 2020-04-03 プラズマ処理装置およびプラズマ処理方法

Country Status (6)

Country Link
US (1) US11776792B2 (ja)
JP (1) JP7116248B2 (ja)
KR (1) KR102560323B1 (ja)
CN (1) CN113767453B (ja)
TW (1) TWI804816B (ja)
WO (1) WO2021199420A1 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005024926A1 (ja) * 2003-09-05 2005-03-17 Hitachi Kokusai Electric Inc. 基板処理装置及び半導体装置の製造方法
JP2019110215A (ja) * 2017-12-19 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1357411A (en) 1971-02-01 1974-06-19 Fluid Devices Ltd Multiway directional fluid flow control valve arrangement
EP0106497B1 (en) 1982-09-10 1988-06-01 Nippon Telegraph And Telephone Corporation Ion shower apparatus
US4638837A (en) 1984-11-13 1987-01-27 Allied Corporation Electro/pneumatic proportional valve
JP2603217B2 (ja) 1985-07-12 1997-04-23 株式会社日立製作所 表面処理方法及び表面処理装置
JPS6253693A (ja) 1985-08-30 1987-03-09 佐藤精器株式会社 自動縫製機におけるクランプの移動機構
JP2670623B2 (ja) 1988-09-19 1997-10-29 アネルバ株式会社 マイクロ波プラズマ処理装置
JPH03218018A (ja) 1990-01-23 1991-09-25 Sony Corp バイアスｅｃｒｃｖｄ装置
KR910016054A (ko) 1990-02-23 1991-09-30 미다 가쓰시게 마이크로 전자 장치용 표면 처리 장치 및 그 방법
JPH04225226A (ja) 1990-12-26 1992-08-14 Fujitsu Ltd プラズマ処理装置
JP2937272B2 (ja) 1991-07-03 1999-08-23 東京エレクトロン株式会社 給排ガスの切替システム
JPH05234947A (ja) 1992-02-26 1993-09-10 Toshiba Corp マイクロ波プラズマエッチング装置
JPH08107101A (ja) 1994-10-03 1996-04-23 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
JPH10185953A (ja) 1996-12-27 1998-07-14 Mitsubishi Electric Corp プローブカード探針の洗浄方法およびこの洗浄方法を実施するための装置
US6082406A (en) 1997-08-11 2000-07-04 Master Pneumatic - Detroit, Inc. Pneumatic pilot-operated control valve assembly
JP3317209B2 (ja) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
JP3959565B2 (ja) 1997-12-16 2007-08-15 Ｓｍｃ株式会社 電磁パイロット式３位置切換弁
JP3727464B2 (ja) 1998-01-05 2005-12-14 株式会社テージーケー 四方向切換弁
JP2000306884A (ja) 1999-04-22 2000-11-02 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
US6192937B1 (en) 1999-04-26 2001-02-27 Mac Valves, Inc. Pilot operated pneumatic valve
JP2001085342A (ja) 1999-09-17 2001-03-30 Sony Corp ガスライン自動パージシステム
US6599842B2 (en) 1999-11-29 2003-07-29 Applied Materials, Inc. Method for rounding corners and removing damaged outer surfaces of a trench
JP2001319882A (ja) 2000-05-02 2001-11-16 Canon Inc 真空処理装置および真空処理方法
JP3962614B2 (ja) * 2002-03-14 2007-08-22 芝浦メカトロニクス株式会社 プラズマ処理装置
US6704667B2 (en) 2002-05-13 2004-03-09 Taiwan Semiconductor Manufacturing Co., Ltd Real time mass flow control system with interlock
TW544805B (en) 2002-06-27 2003-08-01 Applied Materials Inc High purity radical process system
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP3865692B2 (ja) 2002-12-16 2007-01-10 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP4407178B2 (ja) * 2003-07-02 2010-02-03 セイコーエプソン株式会社 液晶装置、電子機器、及びプロジェクタ
JP4421609B2 (ja) 2004-03-31 2010-02-24 富士通マイクロエレクトロニクス株式会社 基板処理装置および半導体装置の製造方法、エッチング装置
KR20050099723A (ko) 2004-04-12 2005-10-17 삼성전자주식회사 원자층증착(ａｌｄ)챔버로의 가스공급장치 및 이를 이용한가스공급방법
JP4694249B2 (ja) * 2005-04-20 2011-06-08 株式会社日立ハイテクノロジーズ 真空処理装置及び試料の真空処理方法
JP4512533B2 (ja) * 2005-07-27 2010-07-28 住友精密工業株式会社 エッチング方法及びエッチング装置
JP4921093B2 (ja) 2006-01-16 2012-04-18 Ｊｕｋｉ株式会社 ミシン
JP4943047B2 (ja) * 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
US7902080B2 (en) * 2006-05-30 2011-03-08 Applied Materials, Inc. Deposition-plasma cure cycle process to enhance film quality of silicon dioxide
JP4928893B2 (ja) * 2006-10-03 2012-05-09 株式会社日立ハイテクノロジーズ プラズマエッチング方法。
JP5074741B2 (ja) 2006-11-10 2012-11-14 株式会社日立ハイテクノロジーズ 真空処理装置
KR20080086172A (ko) 2007-03-22 2008-09-25 삼성전자주식회사 반도체 제조설비의 밸브 리크 검출방법
JP2009094401A (ja) * 2007-10-11 2009-04-30 Hitachi Kokusai Electric Inc 基板処理装置
JP2012023163A (ja) * 2010-07-14 2012-02-02 Hitachi High-Technologies Corp プラズマ処理装置
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US8969210B2 (en) 2010-09-15 2015-03-03 Tokyo Electron Limited Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method
JP5528374B2 (ja) 2011-03-03 2014-06-25 東京エレクトロン株式会社 ガス減圧供給装置、これを備えるシリンダキャビネット、バルブボックス、及び基板処理装置
JP5505843B2 (ja) 2011-04-07 2014-05-28 Ｓｍｃ株式会社 パイロット式３位置切換弁
US9488285B2 (en) 2011-10-24 2016-11-08 Eaton Corporation Line pressure valve to selectively control distribution of pressurized fluid
KR20130116607A (ko) 2012-04-16 2013-10-24 삼성전자주식회사 3차원 반도체 메모리 장치 및 그 제조 방법
KR101495288B1 (ko) 2012-06-04 2015-02-24 피에스케이 주식회사 기판 처리 장치 및 방법
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
JP2015050362A (ja) 2013-09-03 2015-03-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20160336190A1 (en) * 2014-01-15 2016-11-17 Tokyo Electron Limited Film forming method and heat treatment apparatus
JP5764228B1 (ja) * 2014-03-18 2015-08-12 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP6396670B2 (ja) 2014-04-15 2018-09-26 東京エレクトロン株式会社 成膜装置ならびに排気装置および排気方法
JP6334369B2 (ja) 2014-11-11 2018-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10100407B2 (en) 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
US10121686B2 (en) * 2015-01-30 2018-11-06 Hitachi High-Technologies Corporation Vacuum processing apparatus
JP5882509B2 (ja) * 2015-02-12 2016-03-09 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
KR102465801B1 (ko) 2015-05-22 2022-11-14 주식회사 히타치하이테크 플라스마 처리 장치 및 그것을 이용한 플라스마 처리 방법
JP6976043B2 (ja) 2015-07-15 2021-12-01 ラム リサーチ コーポレーションLam Research Corporation 原子層堆積中における化学物質の制御された分離および送出により低欠陥処理を可能にするシステムおよび方法
JP6869765B2 (ja) * 2017-03-23 2021-05-12 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
TWM546073U (zh) 2017-03-31 2017-07-21 真環科技有限公司 原子層鍍膜裝置
JP6971805B2 (ja) * 2017-11-28 2021-11-24 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
WO2020069206A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Vacuum pump protection against deposition byproduct buildup

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005024926A1 (ja) * 2003-09-05 2005-03-17 Hitachi Kokusai Electric Inc. 基板処理装置及び半導体装置の製造方法
JP2019110215A (ja) * 2017-12-19 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
KR102560323B1 (ko) 2023-07-28
US20220115212A1 (en) 2022-04-14
TW202139782A (zh) 2021-10-16
CN113767453A (zh) 2021-12-07
JP7116248B2 (ja) 2022-08-09
CN113767453B (zh) 2023-12-12
WO2021199420A1 (ja) 2021-10-07
US11776792B2 (en) 2023-10-03
KR20210124173A (ko) 2021-10-14
TWI804816B (zh) 2023-06-11

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