JPWO2021144648A5 - - Google Patents
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- Publication number
- JPWO2021144648A5 JPWO2021144648A5 JP2021571060A JP2021571060A JPWO2021144648A5 JP WO2021144648 A5 JPWO2021144648 A5 JP WO2021144648A5 JP 2021571060 A JP2021571060 A JP 2021571060A JP 2021571060 A JP2021571060 A JP 2021571060A JP WO2021144648 A5 JPWO2021144648 A5 JP WO2021144648A5
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- semiconductor
- insulator
- storage device
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025079996A JP2025114779A (ja) | 2020-01-16 | 2025-05-12 | 記憶装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020005330 | 2020-01-16 | ||
| JP2020005330 | 2020-01-16 | ||
| PCT/IB2020/062472 WO2021144648A1 (ja) | 2020-01-16 | 2020-12-28 | 記憶装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025079996A Division JP2025114779A (ja) | 2020-01-16 | 2025-05-12 | 記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021144648A1 JPWO2021144648A1 (https=) | 2021-07-22 |
| JPWO2021144648A5 true JPWO2021144648A5 (https=) | 2023-12-21 |
| JP7681522B2 JP7681522B2 (ja) | 2025-05-22 |
Family
ID=76864017
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021571060A Active JP7681522B2 (ja) | 2020-01-16 | 2020-12-28 | 記憶装置 |
| JP2025079996A Pending JP2025114779A (ja) | 2020-01-16 | 2025-05-12 | 記憶装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025079996A Pending JP2025114779A (ja) | 2020-01-16 | 2025-05-12 | 記憶装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12444466B2 (https=) |
| JP (2) | JP7681522B2 (https=) |
| WO (1) | WO2021144648A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024001641A (ja) * | 2022-06-22 | 2024-01-10 | キオクシア株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101698193B1 (ko) | 2009-09-15 | 2017-01-19 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 및 그 제조 방법 |
| US8455940B2 (en) | 2010-05-24 | 2013-06-04 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device |
| KR20150060144A (ko) * | 2013-11-26 | 2015-06-03 | 삼성전자주식회사 | 비휘발성 메모리 장치의 동작 방법 |
| JP6509514B2 (ja) | 2014-09-17 | 2019-05-08 | 東芝メモリ株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| US9634097B2 (en) | 2014-11-25 | 2017-04-25 | Sandisk Technologies Llc | 3D NAND with oxide semiconductor channel |
| US9548124B1 (en) * | 2015-10-14 | 2017-01-17 | Sandisk Technologies Llc | Word line dependent programming in a memory device |
| US10586495B2 (en) | 2016-07-22 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| US10223194B2 (en) | 2016-11-04 | 2019-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Storage device, semiconductor device, electronic device, and server system |
| US10497712B2 (en) * | 2017-03-16 | 2019-12-03 | Toshiba Memory Corporation | Semiconductor memory |
| TWI648825B (zh) | 2017-03-16 | 2019-01-21 | 日商東芝記憶體股份有限公司 | 半導體記憶體 |
| US10312239B2 (en) | 2017-03-16 | 2019-06-04 | Toshiba Memory Corporation | Semiconductor memory including semiconductor oxie |
| US10553601B2 (en) | 2017-03-16 | 2020-02-04 | Toshiba Memory Corporation | Semiconductor memory including semiconductor oxide |
| TW201901971A (zh) * | 2017-05-12 | 2019-01-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| JP6693907B2 (ja) | 2017-06-08 | 2020-05-13 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置、及び電子機器 |
| US10593693B2 (en) | 2017-06-16 | 2020-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP7195068B2 (ja) * | 2017-06-26 | 2022-12-23 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
| JP7265475B2 (ja) | 2017-06-27 | 2023-04-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US11682667B2 (en) | 2017-06-27 | 2023-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Memory cell including cell transistor including control gate and charge accumulation layer |
| JP7234110B2 (ja) | 2017-07-06 | 2023-03-07 | 株式会社半導体エネルギー研究所 | メモリセル及び半導体装置 |
| US10665604B2 (en) | 2017-07-21 | 2020-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, memory device, and electronic device |
| US10541035B1 (en) * | 2018-06-28 | 2020-01-21 | Sandisk Technologies Llc | Read bias adjustment for compensating threshold voltage shift due to lateral charge movement |
| US11849584B2 (en) | 2019-01-25 | 2023-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of semiconductor device, and operation method of semiconductor device |
| US11069707B2 (en) * | 2019-10-29 | 2021-07-20 | Sandisk Technologies Llc | Variable die size memory device and methods of manufacturing the same |
| TW202602212A (zh) | 2019-10-31 | 2026-01-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
| WO2021111243A1 (ja) * | 2019-12-06 | 2021-06-10 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
-
2020
- 2020-12-28 WO PCT/IB2020/062472 patent/WO2021144648A1/ja not_active Ceased
- 2020-12-28 US US17/791,326 patent/US12444466B2/en active Active
- 2020-12-28 JP JP2021571060A patent/JP7681522B2/ja active Active
-
2025
- 2025-05-12 JP JP2025079996A patent/JP2025114779A/ja active Pending
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