JPWO2020201865A5 - - Google Patents

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Publication number
JPWO2020201865A5
JPWO2020201865A5 JP2021510571A JP2021510571A JPWO2020201865A5 JP WO2020201865 A5 JPWO2020201865 A5 JP WO2020201865A5 JP 2021510571 A JP2021510571 A JP 2021510571A JP 2021510571 A JP2021510571 A JP 2021510571A JP WO2020201865 A5 JPWO2020201865 A5 JP WO2020201865A5
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JP
Japan
Prior art keywords
transistor
bit line
electrically connected
correction circuit
semiconductor device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2021510571A
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English (en)
Japanese (ja)
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JPWO2020201865A1 (https=
JP7429686B2 (ja
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Priority claimed from PCT/IB2020/052357 external-priority patent/WO2020201865A1/ja
Publication of JPWO2020201865A1 publication Critical patent/JPWO2020201865A1/ja
Publication of JPWO2020201865A5 publication Critical patent/JPWO2020201865A5/ja
Priority to JP2024010971A priority Critical patent/JP7615370B2/ja
Application granted granted Critical
Publication of JP7429686B2 publication Critical patent/JP7429686B2/ja
Priority to JP2024231656A priority patent/JP7762286B2/ja
Priority to JP2025175456A priority patent/JP2026012802A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2021510571A 2019-03-29 2020-03-16 半導体装置 Active JP7429686B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2024010971A JP7615370B2 (ja) 2019-03-29 2024-01-29 半導体装置
JP2024231656A JP7762286B2 (ja) 2019-03-29 2024-12-27 半導体装置
JP2025175456A JP2026012802A (ja) 2019-03-29 2025-10-17 半導体装置

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2019065475 2019-03-29
JP2019065473 2019-03-29
JP2019065473 2019-03-29
JP2019065475 2019-03-29
JP2019073992 2019-04-09
JP2019073992 2019-04-09
JP2019102753 2019-05-31
JP2019102753 2019-05-31
PCT/IB2020/052357 WO2020201865A1 (ja) 2019-03-29 2020-03-16 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024010971A Division JP7615370B2 (ja) 2019-03-29 2024-01-29 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020201865A1 JPWO2020201865A1 (https=) 2020-10-08
JPWO2020201865A5 true JPWO2020201865A5 (https=) 2023-02-17
JP7429686B2 JP7429686B2 (ja) 2024-02-08

Family

ID=72666597

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2021510571A Active JP7429686B2 (ja) 2019-03-29 2020-03-16 半導体装置
JP2024010971A Active JP7615370B2 (ja) 2019-03-29 2024-01-29 半導体装置
JP2024231656A Active JP7762286B2 (ja) 2019-03-29 2024-12-27 半導体装置
JP2025175456A Pending JP2026012802A (ja) 2019-03-29 2025-10-17 半導体装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2024010971A Active JP7615370B2 (ja) 2019-03-29 2024-01-29 半導体装置
JP2024231656A Active JP7762286B2 (ja) 2019-03-29 2024-12-27 半導体装置
JP2025175456A Pending JP2026012802A (ja) 2019-03-29 2025-10-17 半導体装置

Country Status (6)

Country Link
US (3) US11948626B2 (https=)
JP (4) JP7429686B2 (https=)
KR (2) KR20260028177A (https=)
CN (1) CN113646839A (https=)
TW (2) TWI842855B (https=)
WO (1) WO2020201865A1 (https=)

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US11749623B2 (en) * 2021-03-31 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor memory devices and methods of manufacturing thereof
TWI769789B (zh) * 2021-04-21 2022-07-01 財團法人工業技術研究院 陣列開關電路及系統晶片封裝結構
KR20240152330A (ko) * 2022-02-10 2024-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
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US20250194074A1 (en) * 2022-03-04 2025-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Method For Fabricating The Semiconductor Device
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US11984165B2 (en) * 2022-05-24 2024-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device with reduced area
CN119732198A (zh) * 2022-09-01 2025-03-28 株式会社半导体能源研究所 存储装置
US12506096B2 (en) * 2022-09-06 2025-12-23 Micron Technology, Inc. Microelectronic devices, and related memory devices and electronic systems
CN118450710A (zh) * 2023-02-03 2024-08-06 株式会社半导体能源研究所 存储装置及电子设备
US20240312492A1 (en) * 2023-03-16 2024-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device, memory cell and method
JP2024137039A (ja) * 2023-03-24 2024-10-04 キオクシア株式会社 磁気記憶装置

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JP3248468B2 (ja) 1997-10-30 2002-01-21 日本電気株式会社 半導体記憶装置
JPH11260054A (ja) * 1998-01-08 1999-09-24 Mitsubishi Electric Corp ダイナミック型半導体記憶装置
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CN111727501B (zh) * 2018-02-23 2025-02-14 株式会社半导体能源研究所 存储装置及其工作方法
TWI842855B (zh) * 2019-03-29 2024-05-21 日商半導體能源研究所股份有限公司 半導體裝置
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