JPWO2021094878A5 - - Google Patents
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- Publication number
- JPWO2021094878A5 JPWO2021094878A5 JP2021555900A JP2021555900A JPWO2021094878A5 JP WO2021094878 A5 JPWO2021094878 A5 JP WO2021094878A5 JP 2021555900 A JP2021555900 A JP 2021555900A JP 2021555900 A JP2021555900 A JP 2021555900A JP WO2021094878 A5 JPWO2021094878 A5 JP WO2021094878A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- gate electrode
- back gate
- region
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 8
- 239000010703 silicon Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 7
- 230000015572 biosynthetic process Effects 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 6
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025051252A JP2025098163A (ja) | 2019-11-15 | 2025-03-26 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019206615 | 2019-11-15 | ||
| PCT/IB2020/060397 WO2021094878A1 (ja) | 2019-11-15 | 2020-11-05 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025051252A Division JP2025098163A (ja) | 2019-11-15 | 2025-03-26 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021094878A1 JPWO2021094878A1 (https=) | 2021-05-20 |
| JPWO2021094878A5 true JPWO2021094878A5 (https=) | 2023-10-27 |
Family
ID=75911938
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021555900A Withdrawn JPWO2021094878A1 (https=) | 2019-11-15 | 2020-11-05 | |
| JP2025051252A Withdrawn JP2025098163A (ja) | 2019-11-15 | 2025-03-26 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025051252A Withdrawn JP2025098163A (ja) | 2019-11-15 | 2025-03-26 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12453182B2 (https=) |
| JP (2) | JPWO2021094878A1 (https=) |
| WO (1) | WO2021094878A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12256154B2 (en) * | 2020-05-08 | 2025-03-18 | Sony Semiconductor Solutions Corporation | Electronic device and imaging device with image data correction |
| EP4679972A3 (en) * | 2021-05-25 | 2026-04-01 | Innoscience (Suzhou) Technology Co., Ltd. | Nitride-based semiconductor bidirectional switching device and method for manufacturing the same |
| WO2023024117A1 (zh) * | 2021-08-27 | 2023-03-02 | 京东方科技集团股份有限公司 | 薄膜晶体管、显示面板和显示装置 |
| KR20240093546A (ko) | 2021-10-27 | 2024-06-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| CN116234296B (zh) * | 2022-01-18 | 2024-09-17 | 北京超弦存储器研究院 | 动态存储器以及soc芯片 |
| CN116234298B (zh) * | 2022-01-26 | 2024-02-23 | 北京超弦存储器研究院 | 动态存储器及soc芯片 |
| CN116209244B (zh) * | 2022-01-26 | 2024-02-23 | 北京超弦存储器研究院 | 动态存储器及存储装置 |
| CN116234299B (zh) * | 2022-01-27 | 2024-02-23 | 北京超弦存储器研究院 | 动态存储器及其制作方法、soc芯片 |
| US12235781B2 (en) * | 2022-12-30 | 2025-02-25 | Parade Technologies, Ltd. | Power consumption control for transmitters of retimers in high speed data communication |
| CN119403121B (zh) * | 2023-07-24 | 2025-10-03 | 长鑫科技集团股份有限公司 | 存储单元结构及其制造方法、存储单元阵列结构 |
| US20250322865A1 (en) * | 2024-04-12 | 2025-10-16 | Taiwan Semiconductor Manufacturing Company Limited | Gain cell memory device using enhanced sensing scheme and methods for operating the same |
| WO2025256076A1 (zh) * | 2024-06-14 | 2025-12-18 | 杭州知存算力科技有限公司 | 半导体器件及其制造方法、存算装置及电子设备 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7375410B2 (en) | 2004-02-25 | 2008-05-20 | International Business Machines Corporation | Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof |
| JP4967264B2 (ja) | 2005-07-11 | 2012-07-04 | 株式会社日立製作所 | 半導体装置 |
| JP2007110009A (ja) | 2005-10-17 | 2007-04-26 | Seiko Epson Corp | 半導体回路とその製造方法 |
| JP5019436B2 (ja) * | 2007-02-22 | 2012-09-05 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| JP5528667B2 (ja) | 2007-11-28 | 2014-06-25 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の制御方法 |
| CN102742003B (zh) | 2010-01-15 | 2015-01-28 | 株式会社半导体能源研究所 | 半导体器件 |
| US8431994B2 (en) | 2010-03-16 | 2013-04-30 | International Business Machines Corporation | Thin-BOX metal backgate extremely thin SOI device |
| JP5847550B2 (ja) * | 2011-11-16 | 2016-01-27 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| KR102932705B1 (ko) * | 2012-04-13 | 2026-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI643435B (zh) | 2013-08-21 | 2018-12-01 | 日商半導體能源研究所股份有限公司 | 電荷泵電路以及具備電荷泵電路的半導體裝置 |
| JP6258672B2 (ja) | 2013-11-21 | 2018-01-10 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR102367921B1 (ko) * | 2014-03-14 | 2022-02-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 회로 시스템 |
| WO2016055894A1 (en) | 2014-10-06 | 2016-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| KR20210039507A (ko) | 2014-11-28 | 2021-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 모듈, 및 전자 기기 |
| JP6340310B2 (ja) | 2014-12-17 | 2018-06-06 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置およびウェラブル装置 |
| US9627549B1 (en) * | 2015-10-05 | 2017-04-18 | United Microelectronics Corp. | Semiconductor transistor device and method for fabricating the same |
| JP6867188B2 (ja) | 2017-02-27 | 2021-04-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| EP3429080A1 (en) | 2017-07-14 | 2019-01-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Switch device for switching an analog electrical input signal |
| US20200313000A1 (en) | 2017-11-14 | 2020-10-01 | Renesas Electronics Corporation | Semiconductor device |
| US10756613B2 (en) | 2018-02-01 | 2020-08-25 | Marvell Asia Pte, Ltd. | Controlling current flow between nodes with adjustable back-gate voltage |
-
2020
- 2020-11-05 WO PCT/IB2020/060397 patent/WO2021094878A1/ja not_active Ceased
- 2020-11-05 JP JP2021555900A patent/JPWO2021094878A1/ja not_active Withdrawn
- 2020-11-05 US US17/774,958 patent/US12453182B2/en active Active
-
2025
- 2025-03-26 JP JP2025051252A patent/JP2025098163A/ja not_active Withdrawn
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