JPWO2020201865A1 - - Google Patents
Info
- Publication number
- JPWO2020201865A1 JPWO2020201865A1 JP2021510571A JP2021510571A JPWO2020201865A1 JP WO2020201865 A1 JPWO2020201865 A1 JP WO2020201865A1 JP 2021510571 A JP2021510571 A JP 2021510571A JP 2021510571 A JP2021510571 A JP 2021510571A JP WO2020201865 A1 JPWO2020201865 A1 JP WO2020201865A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024010971A JP7615370B2 (ja) | 2019-03-29 | 2024-01-29 | 半導体装置 |
| JP2024231656A JP7762286B2 (ja) | 2019-03-29 | 2024-12-27 | 半導体装置 |
| JP2025175456A JP2026012802A (ja) | 2019-03-29 | 2025-10-17 | 半導体装置 |
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019065475 | 2019-03-29 | ||
| JP2019065473 | 2019-03-29 | ||
| JP2019065473 | 2019-03-29 | ||
| JP2019065475 | 2019-03-29 | ||
| JP2019073992 | 2019-04-09 | ||
| JP2019073992 | 2019-04-09 | ||
| JP2019102753 | 2019-05-31 | ||
| JP2019102753 | 2019-05-31 | ||
| PCT/IB2020/052357 WO2020201865A1 (ja) | 2019-03-29 | 2020-03-16 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024010971A Division JP7615370B2 (ja) | 2019-03-29 | 2024-01-29 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020201865A1 true JPWO2020201865A1 (https=) | 2020-10-08 |
| JPWO2020201865A5 JPWO2020201865A5 (https=) | 2023-02-17 |
| JP7429686B2 JP7429686B2 (ja) | 2024-02-08 |
Family
ID=72666597
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021510571A Active JP7429686B2 (ja) | 2019-03-29 | 2020-03-16 | 半導体装置 |
| JP2024010971A Active JP7615370B2 (ja) | 2019-03-29 | 2024-01-29 | 半導体装置 |
| JP2024231656A Active JP7762286B2 (ja) | 2019-03-29 | 2024-12-27 | 半導体装置 |
| JP2025175456A Pending JP2026012802A (ja) | 2019-03-29 | 2025-10-17 | 半導体装置 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024010971A Active JP7615370B2 (ja) | 2019-03-29 | 2024-01-29 | 半導体装置 |
| JP2024231656A Active JP7762286B2 (ja) | 2019-03-29 | 2024-12-27 | 半導体装置 |
| JP2025175456A Pending JP2026012802A (ja) | 2019-03-29 | 2025-10-17 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US11948626B2 (https=) |
| JP (4) | JP7429686B2 (https=) |
| KR (2) | KR20260028177A (https=) |
| CN (1) | CN113646839A (https=) |
| TW (2) | TWI842855B (https=) |
| WO (1) | WO2020201865A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI842855B (zh) * | 2019-03-29 | 2024-05-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2022168160A1 (ja) * | 2021-02-02 | 2022-08-11 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体メモリ装置 |
| US11749623B2 (en) * | 2021-03-31 | 2023-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor memory devices and methods of manufacturing thereof |
| TWI769789B (zh) * | 2021-04-21 | 2022-07-01 | 財團法人工業技術研究院 | 陣列開關電路及系統晶片封裝結構 |
| KR20240152330A (ko) * | 2022-02-10 | 2024-10-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
| JPWO2023156883A1 (https=) * | 2022-02-18 | 2023-08-24 | ||
| US20250194074A1 (en) * | 2022-03-04 | 2025-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Method For Fabricating The Semiconductor Device |
| JP7746205B2 (ja) * | 2022-03-23 | 2025-09-30 | キオクシア株式会社 | 半導体記憶装置 |
| US11984165B2 (en) * | 2022-05-24 | 2024-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device with reduced area |
| CN119732198A (zh) * | 2022-09-01 | 2025-03-28 | 株式会社半导体能源研究所 | 存储装置 |
| US12506096B2 (en) * | 2022-09-06 | 2025-12-23 | Micron Technology, Inc. | Microelectronic devices, and related memory devices and electronic systems |
| CN118450710A (zh) * | 2023-02-03 | 2024-08-06 | 株式会社半导体能源研究所 | 存储装置及电子设备 |
| US20240312492A1 (en) * | 2023-03-16 | 2024-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit device, memory cell and method |
| JP2024137039A (ja) * | 2023-03-24 | 2024-10-04 | キオクシア株式会社 | 磁気記憶装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010055730A (ja) * | 2008-08-29 | 2010-03-11 | Elpida Memory Inc | センスアンプ回路及び半導体記憶装置 |
| WO2017055967A1 (en) * | 2015-09-30 | 2017-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2019003045A1 (ja) * | 2017-06-27 | 2019-01-03 | 株式会社半導体エネルギー研究所 | 記憶装置 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5117113A (en) * | 1990-07-06 | 1992-05-26 | Thompson And Nielson Electronics Ltd. | Direct reading dosimeter |
| JP3279615B2 (ja) | 1991-04-15 | 2002-04-30 | 株式会社日立製作所 | 半導体装置 |
| JP3248468B2 (ja) | 1997-10-30 | 2002-01-21 | 日本電気株式会社 | 半導体記憶装置 |
| JPH11260054A (ja) * | 1998-01-08 | 1999-09-24 | Mitsubishi Electric Corp | ダイナミック型半導体記憶装置 |
| JP4260469B2 (ja) * | 2002-12-16 | 2009-04-30 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| KR100746292B1 (ko) * | 2006-07-04 | 2007-08-03 | 삼성전자주식회사 | 비휘발성 메모리 장치 |
| JP2008282459A (ja) * | 2007-05-08 | 2008-11-20 | Elpida Memory Inc | 半導体記憶装置 |
| JP2009059735A (ja) * | 2007-08-29 | 2009-03-19 | Elpida Memory Inc | 半導体記憶装置 |
| KR101046556B1 (ko) * | 2008-03-17 | 2011-07-05 | 엘피다 메모리 가부시키가이샤 | 단일 종단 감지 증폭기를 갖는 반도체 디바이스 |
| KR101264518B1 (ko) * | 2008-10-06 | 2013-05-14 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치 |
| US8120966B2 (en) | 2009-02-05 | 2012-02-21 | Aplus Flash Technology, Inc. | Method and apparatus for management of over-erasure in NAND-based NOR-type flash memory |
| JP2010232398A (ja) | 2009-03-27 | 2010-10-14 | Elpida Memory Inc | 半導体装置および半導体装置の制御方法 |
| JP2012256821A (ja) * | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
| JP5650475B2 (ja) * | 2010-09-14 | 2015-01-07 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置及びその制御方法 |
| JP2012104165A (ja) * | 2010-11-05 | 2012-05-31 | Elpida Memory Inc | 半導体装置 |
| US8582363B2 (en) | 2011-01-31 | 2013-11-12 | Aplus Flash Technology, Inc. | Method and apparatus for management of over-erasure in NAND-based NOR-type flash memory |
| JP2013065638A (ja) * | 2011-09-15 | 2013-04-11 | Elpida Memory Inc | 半導体装置 |
| WO2013075067A1 (en) | 2011-11-18 | 2013-05-23 | Aplus Flash Technology, Inc. | Low voltage page buffer for use in nonvolatile memory design |
| JP2013157044A (ja) * | 2012-01-27 | 2013-08-15 | Elpida Memory Inc | 半導体装置 |
| US9171627B2 (en) | 2012-04-11 | 2015-10-27 | Aplus Flash Technology, Inc. | Non-boosting program inhibit scheme in NAND design |
| US9087595B2 (en) | 2012-04-20 | 2015-07-21 | Aplus Flash Technology, Inc. | Shielding 2-cycle half-page read and program schemes for advanced NAND flash design |
| JP2015041388A (ja) | 2013-08-20 | 2015-03-02 | 株式会社半導体エネルギー研究所 | 記憶装置、及び半導体装置 |
| JP6607681B2 (ja) | 2014-03-07 | 2019-11-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9716100B2 (en) | 2014-03-14 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for driving semiconductor device, and electronic device |
| WO2017158465A1 (ja) | 2016-03-18 | 2017-09-21 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| US10236875B2 (en) * | 2016-04-15 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for operating the semiconductor device |
| TWI734781B (zh) | 2016-05-20 | 2021-08-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置、電子構件及電子裝置 |
| US10446226B2 (en) | 2016-08-08 | 2019-10-15 | Micron Technology, Inc. | Apparatuses including multi-level memory cells and methods of operation of same |
| US10192871B2 (en) * | 2016-09-23 | 2019-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN117355134A (zh) * | 2017-01-27 | 2024-01-05 | 株式会社半导体能源研究所 | 电容器、半导体装置及半导体装置的制造方法 |
| JP6975560B2 (ja) * | 2017-06-23 | 2021-12-01 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| CN111052350B (zh) | 2017-09-06 | 2024-04-26 | 株式会社半导体能源研究所 | 半导体装置、存储装置及电子设备 |
| CN111727501B (zh) * | 2018-02-23 | 2025-02-14 | 株式会社半导体能源研究所 | 存储装置及其工作方法 |
| TWI842855B (zh) * | 2019-03-29 | 2024-05-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US11984147B2 (en) * | 2019-04-26 | 2024-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including sense amplifier and operation method of semiconductor device |
| JPWO2020245688A1 (https=) * | 2019-06-04 | 2020-12-10 | ||
| JP7629914B2 (ja) * | 2020-05-22 | 2025-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2020
- 2020-03-12 TW TW109108242A patent/TWI842855B/zh active
- 2020-03-12 TW TW113115235A patent/TW202431270A/zh unknown
- 2020-03-16 JP JP2021510571A patent/JP7429686B2/ja active Active
- 2020-03-16 KR KR1020267003581A patent/KR20260028177A/ko active Pending
- 2020-03-16 CN CN202080025962.6A patent/CN113646839A/zh active Pending
- 2020-03-16 US US17/439,876 patent/US11948626B2/en active Active
- 2020-03-16 WO PCT/IB2020/052357 patent/WO2020201865A1/ja not_active Ceased
- 2020-03-16 KR KR1020217033820A patent/KR102929911B1/ko active Active
-
2024
- 2024-01-29 JP JP2024010971A patent/JP7615370B2/ja active Active
- 2024-02-22 US US18/584,118 patent/US12531114B2/en active Active
- 2024-12-27 JP JP2024231656A patent/JP7762286B2/ja active Active
-
2025
- 2025-10-17 JP JP2025175456A patent/JP2026012802A/ja active Pending
- 2025-11-12 US US19/386,693 patent/US20260073976A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010055730A (ja) * | 2008-08-29 | 2010-03-11 | Elpida Memory Inc | センスアンプ回路及び半導体記憶装置 |
| WO2017055967A1 (en) * | 2015-09-30 | 2017-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2019003045A1 (ja) * | 2017-06-27 | 2019-01-03 | 株式会社半導体エネルギー研究所 | 記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102929911B1 (ko) | 2026-02-23 |
| US11948626B2 (en) | 2024-04-02 |
| US12531114B2 (en) | 2026-01-20 |
| WO2020201865A1 (ja) | 2020-10-08 |
| JP2024046762A (ja) | 2024-04-04 |
| TW202101468A (zh) | 2021-01-01 |
| JP7762286B2 (ja) | 2025-10-29 |
| US20220180920A1 (en) | 2022-06-09 |
| JP2026012802A (ja) | 2026-01-27 |
| JP7615370B2 (ja) | 2025-01-16 |
| KR20260028177A (ko) | 2026-03-03 |
| JP7429686B2 (ja) | 2024-02-08 |
| US20240194252A1 (en) | 2024-06-13 |
| KR20210142695A (ko) | 2021-11-25 |
| CN113646839A (zh) | 2021-11-12 |
| TW202431270A (zh) | 2024-08-01 |
| TWI842855B (zh) | 2024-05-21 |
| US20260073976A1 (en) | 2026-03-12 |
| JP2025063098A (ja) | 2025-04-15 |
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