|
US4501060A
(en)
|
1983-01-24 |
1985-02-26 |
At&T Bell Laboratories |
Dielectrically isolated semiconductor devices
|
|
US4755865A
(en)
|
1986-01-21 |
1988-07-05 |
Motorola Inc. |
Means for stabilizing polycrystalline semiconductor layers
|
|
JPH06105691B2
(ja)
|
1988-09-29 |
1994-12-21 |
株式会社富士電機総合研究所 |
炭素添加非晶質シリコン薄膜の製造方法
|
|
JP2617798B2
(ja)
|
1989-09-22 |
1997-06-04 |
三菱電機株式会社 |
積層型半導体装置およびその製造方法
|
|
US6043138A
(en)
|
1996-09-16 |
2000-03-28 |
Advanced Micro Devices, Inc. |
Multi-step polysilicon deposition process for boron penetration inhibition
|
|
SG65697A1
(en)
*
|
1996-11-15 |
1999-06-22 |
Canon Kk |
Process for producing semiconductor article
|
|
US5783469A
(en)
|
1996-12-10 |
1998-07-21 |
Advanced Micro Devices, Inc. |
Method for making nitrogenated gate structure for improved transistor performance
|
|
US6534380B1
(en)
*
|
1997-07-18 |
2003-03-18 |
Denso Corporation |
Semiconductor substrate and method of manufacturing the same
|
|
US6068928A
(en)
|
1998-02-25 |
2000-05-30 |
Siemens Aktiengesellschaft |
Method for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the method
|
|
TW589415B
(en)
|
1998-03-09 |
2004-06-01 |
Shinetsu Handotai Kk |
Method for producing silicon single crystal wafer and silicon single crystal wafer
|
|
JP4228419B2
(ja)
|
1998-07-29 |
2009-02-25 |
信越半導体株式会社 |
Ｓｏｉウエーハの製造方法およびｓｏｉウエーハ
|
|
EP1624482B1
(en)
|
1998-09-02 |
2009-07-29 |
MEMC Electronic Materials, Inc. |
Thermally annealed silicon wafers having improved intrinsic gettering
|
|
JP4313874B2
(ja)
|
1999-02-02 |
2009-08-12 |
キヤノン株式会社 |
基板の製造方法
|
|
US6346459B1
(en)
|
1999-02-05 |
2002-02-12 |
Silicon Wafer Technologies, Inc. |
Process for lift off and transfer of semiconductor devices onto an alien substrate
|
|
US20020090758A1
(en)
|
2000-09-19 |
2002-07-11 |
Silicon Genesis Corporation |
Method and resulting device for manufacturing for double gated transistors
|
|
US6562127B1
(en)
|
2002-01-16 |
2003-05-13 |
The United States Of America As Represented By The Secretary Of The Navy |
Method of making mosaic array of thin semiconductor material of large substrates
|
|
US7074623B2
(en)
|
2002-06-07 |
2006-07-11 |
Amberwave Systems Corporation |
Methods of forming strained-semiconductor-on-insulator finFET device structures
|
|
US6995430B2
(en)
|
2002-06-07 |
2006-02-07 |
Amberwave Systems Corporation |
Strained-semiconductor-on-insulator device structures
|
|
FR2847075B1
(fr)
|
2002-11-07 |
2005-02-18 |
Commissariat Energie Atomique |
Procede de formation d'une zone fragile dans un substrat par co-implantation
|
|
US7057234B2
(en)
|
2002-12-06 |
2006-06-06 |
Cornell Research Foundation, Inc. |
Scalable nano-transistor and memory using back-side trapping
|
|
JP2004193490A
(ja)
*
|
2002-12-13 |
2004-07-08 |
Seiko Epson Corp |
レーザー照射装置、レーザーの照射方法、及び半導体装置の製造方法
|
|
KR100531552B1
(ko)
|
2003-09-05 |
2005-11-28 |
주식회사 하이닉스반도체 |
실리콘 웨이퍼 및 그 제조방법
|
|
US20070032040A1
(en)
|
2003-09-26 |
2007-02-08 |
Dimitri Lederer |
Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses
|
|
US6992025B2
(en)
|
2004-01-12 |
2006-01-31 |
Sharp Laboratories Of America, Inc. |
Strained silicon on insulator from film transfer and relaxation by hydrogen implantation
|
|
JP2005223293A
(ja)
|
2004-02-09 |
2005-08-18 |
Sumitomo Mitsubishi Silicon Corp |
シリコンウェーハの熱処理方法およびシリコンウェーハ
|
|
JP4794137B2
(ja)
|
2004-04-23 |
2011-10-19 |
Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 |
シリコン半導体基板の熱処理方法
|
|
US7279400B2
(en)
|
2004-08-05 |
2007-10-09 |
Sharp Laboratories Of America, Inc. |
Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass
|
|
US7476594B2
(en)
|
2005-03-30 |
2009-01-13 |
Cree, Inc. |
Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
|
|
DE102005028202B4
(de)
|
2005-06-17 |
2010-04-15 |
Siltronic Ag |
Verfahren zur Herstellung von Halbleiterscheiben aus Silizium
|
|
FR2890489B1
(fr)
|
2005-09-08 |
2008-03-07 |
Soitec Silicon On Insulator |
Procede de fabrication d'une heterostructure de type semi-conducteur sur isolant
|
|
FR2898431B1
(fr)
|
2006-03-13 |
2008-07-25 |
Soitec Silicon On Insulator |
Procede de fabrication de film mince
|
|
US7579654B2
(en)
*
|
2006-05-31 |
2009-08-25 |
Corning Incorporated |
Semiconductor on insulator structure made using radiation annealing
|
|
JP2008016652A
(ja)
|
2006-07-06 |
2008-01-24 |
Shin Etsu Handotai Co Ltd |
シリコンウェーハの製造方法
|
|
US7575988B2
(en)
|
2006-07-11 |
2009-08-18 |
S.O.I.Tec Silicon On Insulator Technologies |
Method of fabricating a hybrid substrate
|
|
JP2008244435A
(ja)
|
2007-01-29 |
2008-10-09 |
Silicon Genesis Corp |
選択された注入角度を用いて線形加速器工程を使用した材料の自立膜の製造方法および構造
|
|
FR2912839B1
(fr)
*
|
2007-02-16 |
2009-05-15 |
Soitec Silicon On Insulator |
Amelioration de la qualite de l'interface de collage par nettoyage froid et collage a chaud
|
|
JP5167654B2
(ja)
|
2007-02-26 |
2013-03-21 |
信越半導体株式会社 |
シリコン単結晶ウエーハの製造方法
|
|
JP4445524B2
(ja)
|
2007-06-26 |
2010-04-07 |
株式会社東芝 |
半導体記憶装置の製造方法
|
|
JP2009016692A
(ja)
|
2007-07-06 |
2009-01-22 |
Toshiba Corp |
半導体記憶装置の製造方法と半導体記憶装置
|
|
US7915706B1
(en)
|
2007-07-09 |
2011-03-29 |
Rf Micro Devices, Inc. |
Linearity improvements of semiconductor substrate using passivation
|
|
US20090033110A1
(en)
|
2007-07-30 |
2009-02-05 |
John Chris Fragale |
Device for carrying bags without the use of hands
|
|
US7879699B2
(en)
|
2007-09-28 |
2011-02-01 |
Infineon Technologies Ag |
Wafer and a method for manufacturing a wafer
|
|
US8128749B2
(en)
|
2007-10-04 |
2012-03-06 |
International Business Machines Corporation |
Fabrication of SOI with gettering layer
|
|
US7868419B1
(en)
|
2007-10-18 |
2011-01-11 |
Rf Micro Devices, Inc. |
Linearity improvements of semiconductor substrate based radio frequency devices
|
|
US20090236689A1
(en)
|
2008-03-24 |
2009-09-24 |
Freescale Semiconductor, Inc. |
Integrated passive device and method with low cost substrate
|
|
FR2933234B1
(fr)
|
2008-06-30 |
2016-09-23 |
S O I Tec Silicon On Insulator Tech |
Substrat bon marche a structure double et procede de fabrication associe
|
|
JP5496608B2
(ja)
*
|
2008-11-12 |
2014-05-21 |
信越化学工業株式会社 |
Ｓｏｉ基板の作製方法
|
|
US9257328B2
(en)
|
2008-11-26 |
2016-02-09 |
Corning Incorporated |
Glass-ceramic-based semiconductor-on-insulator structures and method for making the same
|
|
JP2009177194A
(ja)
|
2009-03-19 |
2009-08-06 |
Sumco Corp |
シリコンウェーハの製造方法、シリコンウェーハ
|
|
US8058137B1
(en)
|
2009-04-14 |
2011-11-15 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
|
JP2010258083A
(ja)
|
2009-04-22 |
2010-11-11 |
Panasonic Corp |
Ｓｏｉウェーハ、その製造方法および半導体装置の製造方法
|
|
JP2010278337A
(ja)
*
|
2009-05-29 |
2010-12-09 |
Shin-Etsu Chemical Co Ltd |
表面欠陥密度が少ないｓｏｓ基板
|
|
US8766413B2
(en)
|
2009-11-02 |
2014-07-01 |
Fuji Electric Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
JP5644096B2
(ja)
|
2009-11-30 |
2014-12-24 |
ソニー株式会社 |
接合基板の製造方法及び固体撮像装置の製造方法
|
|
US8367519B2
(en)
|
2009-12-30 |
2013-02-05 |
Memc Electronic Materials, Inc. |
Method for the preparation of a multi-layered crystalline structure
|
|
WO2011087878A2
(en)
|
2010-01-18 |
2011-07-21 |
Applied Materials, Inc. |
Manufacture of thin film solar cells with high conversion efficiency
|
|
US9099526B2
(en)
|
2010-02-16 |
2015-08-04 |
Monolithic 3D Inc. |
Integrated circuit device and structure
|
|
FR2961719B1
(fr)
*
|
2010-06-24 |
2013-09-27 |
Soitec Silicon On Insulator |
Procede de traitement d'une piece en un materiau compose
|
|
US8859393B2
(en)
|
2010-06-30 |
2014-10-14 |
Sunedison Semiconductor Limited |
Methods for in-situ passivation of silicon-on-insulator wafers
|
|
KR101145074B1
(ko)
*
|
2010-07-02 |
2012-05-11 |
이상윤 |
반도체 기판의 제조 방법 및 이를 이용한 반도체 장치의 제조 방법
|
|
JP5439305B2
(ja)
|
2010-07-14 |
2014-03-12 |
信越半導体株式会社 |
シリコン基板の製造方法及びシリコン基板
|
|
US9433753B2
(en)
|
2010-07-16 |
2016-09-06 |
Barbara R. Holliday |
Medical tubing stabilizer
|
|
US8642416B2
(en)
|
2010-07-30 |
2014-02-04 |
Monolithic 3D Inc. |
Method of forming three dimensional integrated circuit devices using layer transfer technique
|
|
JP5627649B2
(ja)
|
2010-09-07 |
2014-11-19 |
株式会社東芝 |
窒化物半導体結晶層の製造方法
|
|
JP5117588B2
(ja)
|
2010-09-07 |
2013-01-16 |
株式会社東芝 |
窒化物半導体結晶層の製造方法
|
|
JP5688709B2
(ja)
*
|
2010-09-24 |
2015-03-25 |
国立大学法人東京農工大学 |
薄膜半導体基板の製造方法
|
|
FR2967812B1
(fr)
|
2010-11-19 |
2016-06-10 |
S O I Tec Silicon On Insulator Tech |
Dispositif electronique pour applications radiofrequence ou de puissance et procede de fabrication d'un tel dispositif
|
|
US9287353B2
(en)
|
2010-11-30 |
2016-03-15 |
Kyocera Corporation |
Composite substrate and method of manufacturing the same
|
|
US8481405B2
(en)
|
2010-12-24 |
2013-07-09 |
Io Semiconductor, Inc. |
Trap rich layer with through-silicon-vias in semiconductor devices
|
|
EP3734645B1
(en)
|
2010-12-24 |
2025-09-10 |
Qualcomm Incorporated |
Trap rich layer for semiconductor devices
|
|
US8536021B2
(en)
|
2010-12-24 |
2013-09-17 |
Io Semiconductor, Inc. |
Trap rich layer formation techniques for semiconductor devices
|
|
US8796116B2
(en)
|
2011-01-31 |
2014-08-05 |
Sunedison Semiconductor Limited |
Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
|
|
KR101870476B1
(ko)
|
2011-03-16 |
2018-06-22 |
썬에디슨, 인크. |
핸들 웨이퍼에 고 비저항 영역을 갖는 실리콘-온-인슐레이터 구조체 및 그러한 구조체를 제조하는 방법
|
|
FR2973158B1
(fr)
|
2011-03-22 |
2014-02-28 |
Soitec Silicon On Insulator |
Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences
|
|
US9496255B2
(en)
|
2011-11-16 |
2016-11-15 |
Qualcomm Incorporated |
Stacked CMOS chipset having an insulating layer and a secondary layer and method of forming same
|
|
US8741739B2
(en)
|
2012-01-03 |
2014-06-03 |
International Business Machines Corporation |
High resistivity silicon-on-insulator substrate and method of forming
|
|
US20130193445A1
(en)
|
2012-01-26 |
2013-08-01 |
International Business Machines Corporation |
Soi structures including a buried boron nitride dielectric
|
|
JP6160617B2
(ja)
*
|
2012-07-25 |
2017-07-12 |
信越化学工業株式会社 |
ハイブリッド基板の製造方法及びハイブリッド基板
|
|
US8921209B2
(en)
|
2012-09-12 |
2014-12-30 |
International Business Machines Corporation |
Defect free strained silicon on insulator (SSOI) substrates
|
|
US9202711B2
(en)
|
2013-03-14 |
2015-12-01 |
Sunedison Semiconductor Limited (Uen201334164H) |
Semiconductor-on-insulator wafer manufacturing method for reducing light point defects and surface roughness
|
|
US8951896B2
(en)
|
2013-06-28 |
2015-02-10 |
International Business Machines Corporation |
High linearity SOI wafer for low-distortion circuit applications
|
|
US9768056B2
(en)
|
2013-10-31 |
2017-09-19 |
Sunedison Semiconductor Limited (Uen201334164H) |
Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition
|
|
EP3221884B1
(en)
*
|
2014-11-18 |
2022-06-01 |
GlobalWafers Co., Ltd. |
High resistivity semiconductor-on-insulator wafers with charge trapping layers and method of manufacturing thereof
|
|
US10304739B2
(en)
*
|
2015-01-16 |
2019-05-28 |
Sumitomo Electric Industries, Ltd. |
Method for manufacturing semiconductor substrate, semiconductor substrate, method for manufacturing combined semiconductor substrate, combined semiconductor substrate, and semiconductor-joined substrate
|
|
US10283402B2
(en)
*
|
2015-03-03 |
2019-05-07 |
Globalwafers Co., Ltd. |
Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
|
|
JP6454606B2
(ja)
*
|
2015-06-02 |
2019-01-16 |
信越化学工業株式会社 |
酸化物単結晶薄膜を備えた複合ウェーハの製造方法
|
|
JP6749394B2
(ja)
*
|
2015-11-20 |
2020-09-02 |
グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． |
滑らかな半導体表面の製造方法
|
|
JP6757953B2
(ja)
*
|
2016-08-09 |
2020-09-23 |
学校法人 名古屋電気学園 |
表面加工方法、構造体の製造方法
|