JPWO2019207429A5 - - Google Patents
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- Publication number
- JPWO2019207429A5 JPWO2019207429A5 JP2020515314A JP2020515314A JPWO2019207429A5 JP WO2019207429 A5 JPWO2019207429 A5 JP WO2019207429A5 JP 2020515314 A JP2020515314 A JP 2020515314A JP 2020515314 A JP2020515314 A JP 2020515314A JP WO2019207429 A5 JPWO2019207429 A5 JP WO2019207429A5
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- oxide
- surrounded
- semiconductor device
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 claims 22
- 239000004065 semiconductor Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052718 tin Chemical group 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018086722 | 2018-04-27 | ||
| JP2018086722 | 2018-04-27 | ||
| JP2018086719 | 2018-04-27 | ||
| JP2018086719 | 2018-04-27 | ||
| JP2018147766 | 2018-08-06 | ||
| JP2018147766 | 2018-08-06 | ||
| JP2018150514 | 2018-08-09 | ||
| JP2018150514 | 2018-08-09 | ||
| PCT/IB2019/053205 WO2019207429A1 (ja) | 2018-04-27 | 2019-04-18 | 半導体装置、および半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2019207429A1 JPWO2019207429A1 (ja) | 2021-05-13 |
| JPWO2019207429A5 true JPWO2019207429A5 (https=) | 2022-04-26 |
| JP7330950B2 JP7330950B2 (ja) | 2023-08-22 |
Family
ID=68293879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020515314A Active JP7330950B2 (ja) | 2018-04-27 | 2019-04-18 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11545578B2 (https=) |
| JP (1) | JP7330950B2 (https=) |
| KR (1) | KR102848703B1 (https=) |
| WO (1) | WO2019207429A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019092541A1 (ja) * | 2017-11-09 | 2019-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| WO2020074999A1 (ja) | 2018-10-12 | 2020-04-16 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP7315661B2 (ja) | 2019-04-12 | 2023-07-26 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US12363954B2 (en) | 2020-03-20 | 2025-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| KR20240084818A (ko) * | 2022-12-07 | 2024-06-14 | 삼성전자주식회사 | 반도체 장치 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1039533A3 (en) * | 1999-03-22 | 2001-04-04 | Infineon Technologies North America Corp. | High performance dram and method of manufacture |
| US6333229B1 (en) | 2000-03-13 | 2001-12-25 | International Business Machines Corporation | Method for manufacturing a field effect transitor (FET) having mis-aligned-gate structure |
| US6660598B2 (en) | 2002-02-26 | 2003-12-09 | International Business Machines Corporation | Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region |
| JP2004152790A (ja) | 2002-10-28 | 2004-05-27 | Toshiba Corp | 半導体装置、及び、半導体装置の製造方法 |
| US6673683B1 (en) | 2002-11-07 | 2004-01-06 | Taiwan Semiconductor Manufacturing Co., Ltd | Damascene gate electrode method for fabricating field effect transistor (FET) device with ion implanted lightly doped extension regions |
| JP2009147161A (ja) * | 2007-12-14 | 2009-07-02 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| US8659015B2 (en) | 2011-03-04 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8809854B2 (en) | 2011-04-22 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102113160B1 (ko) | 2012-06-15 | 2020-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9865743B2 (en) | 2012-10-24 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide layer surrounding oxide semiconductor layer |
| US9318618B2 (en) * | 2013-12-27 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6674269B2 (ja) * | 2015-02-09 | 2020-04-01 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| JP2016154225A (ja) | 2015-02-12 | 2016-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP6736321B2 (ja) | 2015-03-27 | 2020-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| WO2017006207A1 (en) | 2015-07-08 | 2017-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9773919B2 (en) * | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US20170062192A1 (en) | 2015-08-28 | 2017-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Film forming apparatus |
| JP6864456B2 (ja) | 2015-10-15 | 2021-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6853663B2 (ja) | 2015-12-28 | 2021-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI739796B (zh) | 2016-02-12 | 2021-09-21 | 日商半導體能源硏究所股份有限公司 | 半導體裝置及電子裝置及半導體晶圓 |
| US10147681B2 (en) | 2016-12-09 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US11069816B2 (en) | 2017-09-01 | 2021-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| CN107507841B (zh) * | 2017-09-22 | 2021-01-22 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
| TWI852333B (zh) | 2017-12-07 | 2024-08-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
-
2019
- 2019-04-18 US US17/047,710 patent/US11545578B2/en active Active
- 2019-04-18 KR KR1020207031895A patent/KR102848703B1/ko active Active
- 2019-04-18 JP JP2020515314A patent/JP7330950B2/ja active Active
- 2019-04-18 WO PCT/IB2019/053205 patent/WO2019207429A1/ja not_active Ceased
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