JPWO2018193759A1 - 抵抗変化素子の製造方法及び抵抗変化素子 - Google Patents
抵抗変化素子の製造方法及び抵抗変化素子 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 79
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 78
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000007789 gas Substances 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 225
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 33
- 239000001301 oxygen Substances 0.000 description 26
- 229910052760 oxygen Inorganic materials 0.000 description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 24
- 238000000034 method Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 13
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 229910001936 tantalum oxide Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 229910000510 noble metal Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/08—Oxides
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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Abstract
Description
このような抵抗変化素子の製造方法によれば、上記基板にバイアス電圧を印加しながら、上記第2金属酸化物層の上に高密度の第2窒化チタン電極層が形成されるので、低コストで電気特性に優れた抵抗変化素子が形成される。
このような抵抗変化素子の製造方法によれば、上記基板に0.03W/cm2以上0.62W/cm2以下のバイアス電圧を印加しながら、上記第2金属酸化物層の上に高密度の第2窒化チタン電極層が形成されるので、低コストで電気特性に優れた抵抗変化素子が形成される。
このような抵抗変化素子の製造方法によれば、上記第2金属酸化物層が3nm以上11nm以下の膜厚で形成されるので、低コストで電気特性に優れた抵抗変化素子が形成される。
このような抵抗変化素子の製造方法によれば、上記基板にバイアス電圧を印加しながら、上記混合ガスの全流量に対する上記窒素ガスの流量が10%以上100%以下に調整され、上記第2金属酸化物層の上に高密度の第2窒化チタン電極層が形成されるので、低コストで電気特性に優れた抵抗変化素子が形成される。
このような抵抗変化素子の製造方法によれば、上記基板にバイアス電圧を印加しながら、上記基板の温度が20℃以上320℃以下に調整されるので、上記第2金属酸化物層の上に高密度の第2窒化チタン電極層が形成されるので、低コストで電気特性に優れた抵抗変化素子が形成される。
このような抵抗変化素子の製造方法によれば、上記基板にバイアス電圧を印加しながら、上記混合ガスの圧力が0.1Pa以上1Pa以下に調整され、上記第2金属酸化物層の上に高密度の第2窒化チタン電極層が形成されるので、低コストで電気特性に優れた抵抗変化素子が形成される。
このような抵抗変化素子の製造方法によれば、上記第2金属酸化物層の上に高密度の第2窒化チタン電極層が形成されるので、低コストで電気特性に優れた抵抗変化素子が形成される。
限られず、ガラス基板等の絶縁性セラミックス基板が用いられてもよい。
ガス流量:50[sccm]
チタンターゲット投入電力:2[W/cm2]
RF周波数:13.56[MHz]
ガス流量:50[sccm]
チタンターゲット投入電力:2[W/cm2]
パルスDC周波数:20[kHz]
2…基板
3…下部電極層
4…酸化物半導体層
41…第1金属酸化物層
42…第2金属酸化物層
5…上部電極
Claims (7)
- 基板上に第1窒化チタン電極層を形成し、
前記第1窒化チタン電極層の上に、第1抵抗率を有する第1金属酸化物層を形成し、
前記第1金属酸化物層の上に、前記第1抵抗率とは異なる第2抵抗率を有する第2金属酸化物層を形成し、
前記基板にバイアス電圧を印加しながら、前記第2金属酸化物層の上に第2窒化チタン電極層をスパッタリング法によって形成する
抵抗変化素子の製造方法。 - 請求項1に記載の抵抗変化素子の製造方法であって、
前記第2窒化チタン電極層を形成する工程は、前記基板に0.03W/cm2以上0.62W/cm2以下のバイアス電力を印加することを含む
抵抗変化素子の製造方法。 - 請求項1または2に記載の抵抗変化素子の製造方法であって、
前記第2窒化チタン電極層を形成する工程は、前記第2金属酸化物層を3nm以上11nm以下の膜厚で形成する工程を含む
抵抗変化素子の製造方法。 - 請求項1〜3のいずれか1つに記載の抵抗変化素子の製造方法であって、
前記第2窒化チタン電極層を形成する工程は、スパッタリングガスとして希ガスと窒素ガスとの混合ガスを用い、前記混合ガスの全流量に対する前記窒素ガスの流量は、10%以上100%以下であることを含む
抵抗変化素子の製造方法。 - 請求項1〜4のいずれか1つに記載の抵抗変化素子の製造方法であって、
前記第2窒化チタン電極層を形成する工程は、前記基板の温度を20℃以上320℃以下に調整することを含む
抵抗変化素子の製造方法。 - 請求項4または5に記載の抵抗変化素子の製造方法であって、
前記混合ガスの圧力を0.1Pa以上1Pa以下に調整することを含む
抵抗変化素子の製造方法。 - 第1窒化チタン電極層と、
第2窒化チタン電極層と、
前記第1窒化チタン電極層と前記第2窒化チタン電極層との間に設けられ、第1抵抗率を有する第1金属酸化物層と、前記第1金属酸化物層と前記第2窒化チタン電極層との間に設けられ、前記第1抵抗率とは異なる第2抵抗率を有する第2金属酸化物層とを有する酸化物半導体層と
を具備し、
前記第2窒化チタン電極層は、4.8g/cm3以上5.5g/cm3以下の密度を有する抵抗変化素子。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008177469A (ja) * | 2007-01-22 | 2008-07-31 | Fujitsu Ltd | 抵抗変化型素子および抵抗変化型素子製造方法 |
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