JPWO2016125674A1 - 半導体モジュールおよび半導体モジュールの製造方法 - Google Patents
半導体モジュールおよび半導体モジュールの製造方法 Download PDFInfo
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- JPWO2016125674A1 JPWO2016125674A1 JP2016573313A JP2016573313A JPWO2016125674A1 JP WO2016125674 A1 JPWO2016125674 A1 JP WO2016125674A1 JP 2016573313 A JP2016573313 A JP 2016573313A JP 2016573313 A JP2016573313 A JP 2016573313A JP WO2016125674 A1 JPWO2016125674 A1 JP WO2016125674A1
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- internal wiring
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Abstract
Description
図1(A)、図1(B)、図2、図3に、本発明の第1実施形態にかかる半導体モジュール100を示す。
(B)においては、封止樹脂8の図示を省略し、その部分を破線で示している。図2は、半導体モジュール100の分解斜視図である。なお、図2においても、封止樹脂8の図示を省略している。図3は、半導体モジュール100の等価回路図である。
いる。また、絶縁基材6bの一方の主面には、対向する2つの辺6b-x、6b-yの一方の辺6b-xに沿って、その辺6b-xと直行する方向に、3本の、I字形状で、板状の内部配線リード端子52a、52b、52cが形成され、他方の辺6b-yに沿って、その辺6b-yと直行する方向に、3本の、I字形状で、板状の内部配線リード端子52d、52e、52fが形成されている。内部配線リード端子52a、52b、52cの幅は、内部配線リード端子52d、52e、52fの幅よりも大きい。内部配線リード端子52a、52b、52cは、それぞれ、開口6b-hを跨ぐように形成されており、内部配線リード端子52a、52b、52cは、開口6b-h部分において、絶縁基材6bの他方の主面側に露出している。
成された内部配線リード端子52aに接合されている。
成された内部配線リード端子52bに接合されている。
成された内部配線リード端子52cに接合されている。
外部導出リード端子151a〜153dは、それぞれ、はんだ(図示せず)により、内部配線リード端子51a〜53dに接合されている。
が固定された絶縁基材6a〜6cと、半導体スイッチング素子1a〜1fと、金属ブロック2a〜2fと、ワイヤー3a〜3fとが一体化される。
第2実施形態にかかる半導体モジュール200を、図15(A)、(B)に示す。ただし、図15(A)は、半導体モジュール200の断面図である。図15(B)は、半導体モジュール200の等価回路図である。
具体的には、半導体モジュール200は、図15(A)に示すように、シャント抵抗素子10が追加されている。
そして、底面に1対の電極パッドが形成されたシャント抵抗素子10を用意し、はんだ4により、一方の電極パッドが内部配線リード端子52gに、他方の電極パッドが内部配線リード端子52hに接合している。
第3実施形態にかかる半導体モジュール300を、図16に示す。ただし、図16は、半導体モジュール300の斜視図である。
第4実施形態にかかる半導体モジュール400を、図17に示す。ただし、図17は、半導体モジュール400の斜視図である。
第5実施形態にかかる半導体モジュール500は、第1実施形態にかかる半導体モジュール100の構成要素の材質に一部変更を加えた。構造そのものには変更がないので、半導体モジュール100を説明した図1、図2を援用して半導体モジュール500を説明する。
、回路を構成するようにしても良い。
2a、2b、2c、2d、2e、2f・・・金属ブロック
3a、3b、3c、3d、3e、3f・・・ワイヤー
4・・・はんだ
51a、52a、52b、52c、52d、52e、52f、53a、53b、53c、53d・・・内部配線リード端子
151a、152a、152b、152c、152d、152e、152f、153a、153b、153c、153d、252d、252e、252f、253b、253c、253d・・・外部導出リード端子
6a、6b、6c・・・絶縁基材
7a、7b・・・放熱板
8・・・封止樹脂
10・・・シャント抵抗素子
100、200、300、400、500・・・半導体モジュール
Claims (13)
- 少なくとも、複数の半導体スイッチング素子と、複数のリード端子と、複数の絶縁基材とが、封止樹脂に封止された半導体モジュールであって、
前記リード端子は、前記絶縁基材に固定された内部配線リード端子と、封止樹脂から外部に導出された外部導出リード端子と、を備え、
前記内部配線リード端子が固定された前記絶縁基材は、上下方向に間隔を開けて、少なくとも3層に分けて配置され、
前記半導体スイッチング素子の電極は、前記内部配線リード端子に、直接または間接に接合されるか、あるいは、ワイヤーボンディングにより接続され、
各前記外部導出リード端子は、一端が、前記絶縁基材に固定された前記内部配線リード端子に接合され、他端が、前記封止樹脂から導出され、
前記外部導出リード端子の少なくとも一部のものは、それぞれ、複数の屈曲部を有し、
全ての前記外部導出リード端子は、前記封止樹脂の側面の同じ高さ部分から外部に導出されている半導体モジュール。 - 前記封止樹脂および前記外部導出リード端子を平面視した場合に、前記外部導出リード端子と前記外部導出リード端子との間の間隔のうち、少なくとも一部の間隔が、前記封止樹脂から前記外部導出リード端子の前記他端の先端方向に向かって、平面方向に広がっている、請求項1に記載された半導体モジュール。
- 前記封止樹脂に、さらに受動部品が封止されている、請求項1または2に記載された半導体モジュール。
- 前記半導体スイッチング素子の電極が、金属ブロックを介して、前記内部配線リード端子に接合されている、請求項1ないし3のいずれか1項に記載された半導体モジュール。
- 少なくとも3層に分けて配置された、前記内部配線リード端子が固定された前記絶縁基材のうち、中間の層に配置されたものに、両主面間を貫通した開口が形成されている、請求項1ないし4のいずれか1項に記載された半導体モジュール。
- 全ての前記外部導出リード端子が、前記封止樹脂の外部で、同一方向に屈曲されている、請求項1ないし5のいずれか1項に記載された半導体モジュール。
- 前記絶縁基材がセラミックスからなり、前記リード端子が、少なくとも、前記セラミックスの構成成分と反応する活性な金属と、Agと、Cuとを含む合金を介して、前記絶縁基板に固定された、請求項1ないし6のいずれか1項に記載された半導体モジュール。
- 前記半導体モジュールがインバータである、請求項1ないし7のいずれか1項に記載された半導体モジュール。
- 複数の絶縁基材を準備する工程と、
複数の内部配線リード端子を準備する工程と、
各前記絶縁基材に、前記内部配線リード端子を固定する工程と、
複数の半導体スイッチング素子を準備する工程と、
前記半導体スイッチング素子の電極を、前記絶縁基材に固定されたいずれかの前記内部配線リード端子に、直接または間接に接合するか、あるいは、ワイヤーボンディングにより接続することにより、前記半導体スイッチング素子を介して、前記絶縁基材を少なくとも3層に重ねて一体化する工程と、
複数の外部導出リード端子を準備する工程と、
前記外部導出リード端子の少なくとも一部のものに、それぞれ、複数の屈曲部を形成する工程と、
各前記外部導出リード端子の一端を、前記絶縁基材に固定されたいずれかの前記内部配線リード端子に接合する工程と、
一体化された、複数の前記半導体スイッチング素子と、複数の前記絶縁基材と、複数の前記内部配線リード端子と、複数の前記外部導出リード端子とを、各前記外部導出リード端子の他端を外部に導出させて樹脂封止する工程と、を備え、
全ての前記外部導出リード端子が、前記封止樹脂の側面の同じ高さ部分から外部に導出されている半導体モジュールの製造方法。 - 少なくとも、
複数の前記外部導出リード端子を準備する工程と、
前記外部導出リード端子の少なくとも一部のものに屈曲部を形成する工程と、
各前記外部導出リード端子の一端を、前記絶縁基材に固定されたいずれかの前記内部配線リード端子に接合する工程を、
複数の前記外部導出リード端子が、1つの環状のリードフレームに一体化された状態で行う、請求項9に記載された半導体モジュールの製造方法。 - 前記リードフレームに固定された各前記外部導出リード端子の一端を、前記絶縁基材に固定されたいずれかの前記内部配線端子に接合する工程において、前記外部導出リード端子が一体化された前記リードフレームと、前記内部配線リード端子が固定された前記絶縁基材とを、これらに対して垂直方向から見た場合、
前記外部導出リード端子の一端と、前記内部配線リード端子との、接合される部分のみが重なっている、請求項10に記載された半導体モジュールの製造方法。 - 前記樹脂封止する工程の後に、
さらに、前記封止樹脂から導出された前記外部導出リード端子から、不要な前記リードフレームを切り離す工程を備えた、請求項10または11に記載された半導体モジュールの製造方法。 - さらに、前記封止樹脂から導出された全ての前記外部導出リード端子を、同一方向に屈曲する工程を備えた、請求項9ないし12のいずれか1項に記載された半導体モジュールの製造方法。
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