JPWO2014178288A1 - 紫外線発光装置 - Google Patents
紫外線発光装置 Download PDFInfo
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- JPWO2014178288A1 JPWO2014178288A1 JP2014541442A JP2014541442A JPWO2014178288A1 JP WO2014178288 A1 JPWO2014178288 A1 JP WO2014178288A1 JP 2014541442 A JP2014541442 A JP 2014541442A JP 2014541442 A JP2014541442 A JP 2014541442A JP WO2014178288 A1 JPWO2014178288 A1 JP WO2014178288A1
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- Prior art keywords
- ultraviolet light
- light emitting
- amorphous fluororesin
- emitting element
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81909—Post-treatment of the bump connector or bonding area
- H01L2224/8192—Applying permanent coating, e.g. protective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Chemical & Material Sciences (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Health & Medical Sciences (AREA)
- Wire Bonding (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
Abstract
Description
CF2=CFOCF(CF3)CF=CF2、
CF2=CFOCF2CF2CF=CF2、
CF2=CFOCF2CF(CF3)CF=CF2、
CF2=CFOCF(CF3)CF2CF=CF2、
CF2=CFOCFClCF2CF=CF2、
CF2=CFOCCl2CF2CF=CF2、
CF2=CFOCF2OCF=CF2、
CF2=CFOC(CF3)2OCF=CF2、
CF2=CFOCF2CF(OCF3)CF=CF2、
CF2=CFCF2CF=CF2、
CF2=CFCF2CF2CF=CF2、
CF2=CFCF2OCF2CF=CF2。
上記実施形態では、本発明装置の好適な実施形態の一例を詳細に説明した。本発明装置の構成は、上記実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内において種々の変形実施が可能である。以下に、本発明装置の別の態様につき説明する。
2: 紫外線発光素子
3: 封止樹脂
3a,3b: 樹脂膜
4: 集光レンズ
5: バンプ材料
6: 塗工液
10: 基材
11: 第1金属電極配線
12: 第2金属電極配線
12a: 第2金属電極配線の凸部
13: 側壁部
14,15: リード端子
16,17: パッド電極
18: 間隙
20: サファイア基板
21: AlN層
22: AlGaN層
23: n型クラッド層(n型AlGaN)
24: 活性層
25: 電子ブロック層(p型AlGaN)
26: p型クラッド層(p型AlGaN)
27: pコンタクト層(p型GaN)
28: p電極
29: n電極
30: 保護絶縁膜
A1: 第1領域
A2: 第2領域
Claims (9)
- 窒化物半導体からなる紫外線発光素子と前記紫外線発光素子を被覆する紫外線透過性の封止樹脂を備えてなる紫外線発光装置であって、
前記封止樹脂の内の少なくとも前記紫外線発光素子のパッド電極と接触する特定部分が、第1タイプの非晶質フッ素樹脂であり、
前記第1タイプの非晶質フッ素樹脂を構成する重合体または共重合体の末端官能基が、前記パッド電極を構成する金属に対して結合性を呈しない非反応性の末端官能基であることを特徴とする紫外線発光装置。 - 前記重合体または前記共重合体を構成する構造単位が、含フッ素脂肪族環構造を有することを特徴とする請求項1に記載の紫外線発光装置。
- 金属電極配線が基材の表面の一部に形成された基台を備え、
前記紫外線発光素子が前記基台上に載置され、
前記紫外線発光素子の前記パッド電極が前記金属電極配線と電気的に接続されていることを特徴とする請求項1または2に記載の紫外線発光装置。 - 前記パッド電極と前記金属電極配線が互いに対向し、バンプ材料を介して電気的且つ物理的に接続しており、
前記紫外線発光素子の前記パッド電極が形成されている側と前記基台の上面との間の空隙に、前記第1タイプの非晶質フッ素樹脂が充填されていることを特徴とする請求項3に記載の紫外線発光装置。 - 前記封止樹脂の内の前記金属電極配線と接触する部分が、前記第1タイプの非晶質フッ素樹脂であることを特徴とする請求項3または4に記載の紫外線発光装置。
- 前記紫外線発光素子の発光中心波長が290nmより短いことを特徴とする請求項1〜5の何れか1項に記載の紫外線発光装置。
- 前記末端官能基がパーフルオロアルキル基であることを特徴とする請求項1〜6の何れか1項に記載の紫外線発光装置。
- 前記末端官能基がCF3であることを特徴とする請求項7に記載の紫外線発光装置。
- 前記封止樹脂の内の前記特定部分以外の部分が、前記第1タイプの非晶質フッ素樹脂、または、前記第1タイプの非晶質フッ素樹脂とは異なる末端官能基を備えた第2タイプの非晶質フッ素樹脂であることを特徴とする請求項1〜8の何れか1項に記載の紫外線発光装置。
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