JP6965363B2 - 紫外線発光装置、紫外線発光装置の製造方法及び紫外線発光モジュールの製造方法 - Google Patents
紫外線発光装置、紫外線発光装置の製造方法及び紫外線発光モジュールの製造方法 Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F14/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F14/18—Monomers containing fluorine
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Description
前記第4工程において、前記レンズを構成する前記非晶質フッ素樹脂をガラス転移温度以上まで加熱するとともに35MPa以上の圧力を加え、当該圧力を加えた状態で前記ガラス転移温度より30℃以上低い温度まで冷却することを特徴とする紫外線発光モジュールの製造方法を提供する。
まず、本発明の実施形態に係る紫外線発光装置が備える窒化物半導体紫外線発光素子の一例について、図面を参照して説明する。図1は、本発明の実施形態に係る紫外線発光装置が備える窒化物半導体紫外線発光素子の素子構造の一例を模式的に示す断面図であり、図2は、図1に示す窒化物半導体紫外線発光素子の平面視形状を模式的に示す平面図である。
次に、本発明の実施形態に係る紫外線発光装置について、図3及び図4を参照して説明する。図3は、本発明の実施形態に係る紫外線発光装置の一例を模式的に示す断面図である。図4は、図3に示す紫外線発光装置で使用されるサブマウントの平面視形状と断面形状を模式的に示す平面図と断面図である。
次に、本発明の実施形態に係る紫外線発光装置の製造方法について説明する。
次に、本発明の実施形態に係る紫外線発光装置1を備えた紫外線発光モジュールの一例について図面を参照して説明する。図5は、本発明の実施形態に係る紫外線発光モジュールの一例を模式的に示す断面図である。
本発明の実施形態に係る窒化物半導体紫外線発光素子10が備えるレンズ41を構成する非晶質フッ素樹脂の高密度化について、以下図面を参照して説明する。
図10では、高密度化装置60が、複数の紫外線発光装置1のそれぞれが備える複数のレンズ41を同時に成形及び高密度化する場合について例示しているが、1つの紫外線発光装置1が備えるレンズ41だけを成形及び高密度化してもよい。同様に、図11では、高密度化装置70が、複数の紫外線発光装置1のそれぞれが備える複数のレンズ41を同時に高密度化する場合について例示しているが、1つの紫外線発光装置1が備えるレンズ41だけを高密度化してもよい。
10: 窒化物半導体紫外線発光素子
11: サファイア基板
12: 半導体積層部
13: n電極
14: p電極
20: AlN層
21: AlGaN層
22: n型クラッド層(n型AlGaN)
23: 活性層
24: 電子ブロック層(p型AlGaN)
25: p型クラッド層(p型AlGaN)
26: p型コンタクト層(p型GaN)
30: サブマウント(基台)
30X: 基台板
31: 基材
32: 第1金属電極配線
320: 第1電極パッド
321: 第1配線部
33: 第2金属電極配線
330: 第2電極パッド
331: 第2配線部
34,35:リード端子
40: 被覆樹脂
41: レンズ
50: 紫外線発光モジュール
51: 被実装部
511,512:ランド
60: 高密度化装置
61: 上部
611: レンズ型
612: ヒータ
613: 凸部
62: 下部
621: ヒータ
622: 凹部
70: 高密度化装置
71: 筐体
72: ヒータ
73: 加圧板
B1,B2:ボンディング材料
T1,T2:対象物
Claims (7)
- 基台と、前記基台上にフリップチップ実装された窒化物半導体紫外線発光素子と、前記窒化物半導体紫外線発光素子を封止して当該窒化物半導体紫外線発光素子から出射される光を集束または拡散させるレンズと、を備えてなる紫外線発光装置であって、
前記レンズは、重合体または共重合体の構造単位が、含フッ素脂肪族環構造を有し、かつ、末端官能基がパーフルオロアルキル基である非晶質フッ素樹脂で構成され、当該非晶質フッ素樹脂の密度が2.11g/cm3よりも大きいことを特徴とする紫外線発光装置。 - 前記レンズを構成する前記非晶質フッ素樹脂の密度が2.21g/cm3よりも大きいことを特徴とする請求項1に記載の紫外線発光装置。
- 前記レンズの表面の一部が、球面または凸状の曲面であることを特徴とする請求項1または2に記載の紫外線発光装置。
- 前記窒化物半導体紫外線発光素子の発光中心波長が200nm以上かつ365nm以下の範囲内にあることを特徴とする請求項1〜3のいずれか1項に記載の紫外線発光装置。
- 基台にフリップチップ実装された窒化物半導体紫外線発光素子を封止して当該窒化物半導体紫外線発光素子から出射される光を集束または拡散させるレンズを形成する第1工程を備え、
前記レンズは、重合体または共重合体の構造単位が、含フッ素脂肪族環構造を有し、かつ、末端官能基がパーフルオロアルキル基である非晶質フッ素樹脂で構成され、
前記第1工程またはその後の工程において、前記レンズを構成する前記非晶質フッ素樹脂をガラス転移温度以上まで加熱するとともに35MPa以上の圧力を加え、当該圧力を加えた状態で前記ガラス転移温度より30℃以上低い温度まで冷却することで、当該非晶質フッ素樹脂を高密度化処理することを特徴とする紫外線発光装置の製造方法。 - 前記第1工程において、複数の前記基台が一体化されてなる基台板上にフリップチップ実装された複数の前記窒化物半導体紫外線発光素子のそれぞれを封止する前記レンズを同時に形成し、
前記レンズを構成する前記非晶質フッ素樹脂の前記高密度化処理後に、前記レンズで封止された前記窒化物半導体紫外線発光素子が1つ以上含まれるように、前記基台板を分割する第2工程を、さらに備えることを特徴とする請求項5に記載の紫外線発光装置の製造方法。 - 基台にフリップチップ実装されるとともにレンズで封止された窒化物半導体紫外線発光素子を有する1または複数の紫外線発光装置を、被実装部に実装する第3工程と、
前記第3工程の後に、非晶質フッ素樹脂を高密度化処理する第4工程と、を備え、
前記レンズは、重合体または共重合体の構造単位が、含フッ素脂肪族環構造を有し、かつ、末端官能基がパーフルオロアルキル基である前記非晶質フッ素樹脂で構成され、
前記第4工程において、前記レンズを構成する前記非晶質フッ素樹脂をガラス転移温度以上まで加熱するとともに35MPa以上の圧力を加え、当該圧力を加えた状態で前記ガラス転移温度より30℃以上低い温度まで冷却することを特徴とする紫外線発光モジュールの製造方法。
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US20030230977A1 (en) | 2002-06-12 | 2003-12-18 | Epstein Howard C. | Semiconductor light emitting device with fluoropolymer lens |
US6921929B2 (en) | 2003-06-27 | 2005-07-26 | Lockheed Martin Corporation | Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens |
US20060138443A1 (en) | 2004-12-23 | 2006-06-29 | Iii-N Technology, Inc. | Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes |
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JP2009280711A (ja) * | 2008-05-22 | 2009-12-03 | Kureha Corp | 高透明フッ素樹脂および該樹脂の用途 |
US9450157B2 (en) * | 2013-04-30 | 2016-09-20 | Soko Kagaku Co., Ltd. | Ultraviolet light emitting device using metal non-bondable amorphous fluororesin molding compound |
US9972758B2 (en) | 2013-09-12 | 2018-05-15 | Soko Kagaku Co., Ltd. | Ultraviolet light emitting device |
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