JPWO2014136962A1 - レーザ素子及びレーザ装置 - Google Patents
レーザ素子及びレーザ装置 Download PDFInfo
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- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
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- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4075—Beam steering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/20—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
この場合、偏光板を通過した後のレーザ光の強度Iは、以下の通りとなる。
Claims (3)
- レーザ光の入射されるフォトニック結晶層を備えたレーザ素子において、
前記フォトニック結晶層は、
第1屈折率媒質からなる基本層と、
前記第1屈折率媒質とは屈折率の異なる第2屈折率媒質からなり前記基本層内に存在する複数の異屈折率領域と、を備え、
複数の前記異屈折率領域は、
平面形状が概略円形又は概略正方形又は90°の回転対称性を有する概略多角形であり、厚み方向に垂直な第1面積を有する第1異屈折率領域と、
厚み方向に垂直な第2面積を有する第2異屈折率領域と、
を備え、
前記第2面積は、前記第1面積よりも小さく、
単位構成領域が、1つの前記第1異屈折率領域と、この周囲に設けられた1つの前記第2異屈折率領域とからなることとし、
前記単位構成領域内における、前記第1異屈折率領域に対する前記第2異屈折率領域の回転角度をφとし、
X軸及びY軸を含むXY平面内において、複数の前記単位構成領域が二次元的に配置されており、
それぞれの前記単位構成領域のXY座標をぞれぞれの前記第1異屈折率領域の重心位置で与えられることとし、
前記単位構成領域のXY座標が(X,Y)の場合には、回転角度φが座標により異なっており、前記フォトニック結晶層の全体の中で、少なくとも3以上の異なる回転角度φを含むことを特徴とするレーザ素子。 - 前記レーザ光を発生する活性層と、
前記活性層を挟む上部及び下部クラッド層と、
前記上部又は下部クラッド層と前記活性層との間に設けられた前記フォトニック結晶層と、
を備えることを特徴とする請求項1に記載のレーザ素子。 - 請求項1又は2に記載のレーザ素子と、
前記レーザ素子の光出射面に対向配置された偏光板と、
を備えることを特徴とするレーザ装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013045826 | 2013-03-07 | ||
JP2013045826 | 2013-03-07 | ||
PCT/JP2014/056045 WO2014136962A1 (ja) | 2013-03-07 | 2014-03-07 | レーザ素子及びレーザ装置 |
Related Child Applications (1)
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JP2018084337A Division JP6557753B2 (ja) | 2013-03-07 | 2018-04-25 | レーザ素子及びレーザ装置 |
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JPWO2014136962A1 true JPWO2014136962A1 (ja) | 2017-02-16 |
JP6333804B2 JP6333804B2 (ja) | 2018-05-30 |
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JP2015504455A Active JP6333804B2 (ja) | 2013-03-07 | 2014-03-07 | レーザ素子及びレーザ装置 |
JP2018084337A Active JP6557753B2 (ja) | 2013-03-07 | 2018-04-25 | レーザ素子及びレーザ装置 |
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Country Status (4)
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US (1) | US9748737B2 (ja) |
JP (2) | JP6333804B2 (ja) |
DE (1) | DE112014001143B4 (ja) |
WO (1) | WO2014136962A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6788574B2 (ja) * | 2015-03-13 | 2020-11-25 | 浜松ホトニクス株式会社 | 半導体発光素子 |
JP6860175B2 (ja) * | 2016-02-29 | 2021-04-14 | 国立大学法人京都大学 | 2次元フォトニック結晶面発光レーザ及びその製造方法 |
US9991669B2 (en) | 2016-07-25 | 2018-06-05 | Hamamatsu Photonics K.K. | Semiconductor light-emitting device and manufacturing method for the same |
US11031751B2 (en) | 2016-08-10 | 2021-06-08 | Hamamatsu Photonics K.K. | Light-emitting device |
JP6747910B2 (ja) * | 2016-08-10 | 2020-08-26 | 浜松ホトニクス株式会社 | 発光装置 |
JP6747922B2 (ja) * | 2016-09-07 | 2020-08-26 | 浜松ホトニクス株式会社 | 半導体発光素子及び発光装置 |
US10734786B2 (en) | 2016-09-07 | 2020-08-04 | Hamamatsu Photonics K.K. | Semiconductor light emitting element and light emitting device including same |
JP7057949B2 (ja) * | 2017-02-28 | 2022-04-21 | 国立大学法人京都大学 | フォトニック結晶レーザ |
DE112018001611T5 (de) * | 2017-03-27 | 2020-01-16 | Hamamatsu Photonics K.K. | Lichtemittierendes halbleiterelement und verfahren zur herstellung eines lichtemittierenden halbleiterelements |
US11646546B2 (en) | 2017-03-27 | 2023-05-09 | Hamamatsu Photonics K.K. | Semiconductor light emitting array with phase modulation regions for generating beam projection patterns |
US11637409B2 (en) * | 2017-03-27 | 2023-04-25 | Hamamatsu Photonics K.K. | Semiconductor light-emitting module and control method therefor |
JP2018164049A (ja) * | 2017-03-27 | 2018-10-18 | 浜松ホトニクス株式会社 | 半導体発光装置 |
JP7081906B2 (ja) * | 2017-06-02 | 2022-06-07 | 浜松ホトニクス株式会社 | 半導体発光素子及び半導体発光素子の位相変調層設計方法 |
JP6959042B2 (ja) | 2017-06-15 | 2021-11-02 | 浜松ホトニクス株式会社 | 発光装置 |
JP7036567B2 (ja) * | 2017-10-20 | 2022-03-15 | 浜松ホトニクス株式会社 | 半導体発光素子 |
US11894658B2 (en) | 2017-11-29 | 2024-02-06 | Vixar, Inc. | Power monitoring approach for VCSELS and VCSEL arrays |
JP7015684B2 (ja) * | 2017-12-08 | 2022-02-03 | 浜松ホトニクス株式会社 | 位相変調層設計方法 |
JP7109179B2 (ja) * | 2017-12-08 | 2022-07-29 | 浜松ホトニクス株式会社 | 発光装置 |
CN111448726B (zh) * | 2017-12-08 | 2023-04-04 | 浜松光子学株式会社 | 发光装置及其制造方法 |
US11626709B2 (en) | 2017-12-08 | 2023-04-11 | Hamamatsu Photonics K.K. | Light-emitting device and production method for same |
JP7103817B2 (ja) * | 2018-03-29 | 2022-07-20 | 浜松ホトニクス株式会社 | 半導体発光素子 |
JP7227060B2 (ja) | 2018-04-13 | 2023-02-21 | 浜松ホトニクス株式会社 | 半導体発光素子 |
CN112272906B (zh) * | 2018-06-08 | 2024-03-15 | 浜松光子学株式会社 | 发光元件 |
JP7485284B2 (ja) * | 2020-07-14 | 2024-05-16 | 国立大学法人京都大学 | フォトニック結晶面発光レーザ素子 |
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US9748737B2 (en) | 2017-08-29 |
US20160020580A1 (en) | 2016-01-21 |
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