JP6276750B2 - レーザ装置 - Google Patents
レーザ装置 Download PDFInfo
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- JP6276750B2 JP6276750B2 JP2015504422A JP2015504422A JP6276750B2 JP 6276750 B2 JP6276750 B2 JP 6276750B2 JP 2015504422 A JP2015504422 A JP 2015504422A JP 2015504422 A JP2015504422 A JP 2015504422A JP 6276750 B2 JP6276750 B2 JP 6276750B2
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- refractive index
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- laser
- photonic crystal
- crystal layer
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- 239000004038 photonic crystal Substances 0.000 claims description 92
- 238000005253 cladding Methods 0.000 claims description 21
- 230000005484 gravity Effects 0.000 claims description 16
- 239000000470 constituent Substances 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 225
- 238000009826 distribution Methods 0.000 description 52
- 238000010586 diagram Methods 0.000 description 39
- 230000005684 electric field Effects 0.000 description 32
- 230000010287 polarization Effects 0.000 description 26
- 239000000758 substrate Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 18
- 239000013598 vector Substances 0.000 description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 239000012535 impurity Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007850 degeneration Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Description
この場合、偏光板を通過した後のレーザ光の強度Iは、以下の通りとなる。
Claims (2)
- レーザ光の入射されるフォトニック結晶層を備えたレーザ素子と、
前記レーザ素子の光出射面に対向配置された偏光板と、
を備えたレーザ装置において、
前記レーザ素子の前記フォトニック結晶層は、
第1屈折率媒質からなる基本層と、
前記第1屈折率媒質とは屈折率の異なる第2屈折率媒質からなり前記基本層内に存在する複数の異屈折率領域と、
を備え、
複数の前記異屈折率領域は、
平面形状が概略三角形、扁平率が0でない概略楕円形、又は、非回転対称形であり、
単位構成領域が、1つの前記異屈折率領域からなることとし、
前記単位構成領域内における、前記異屈折率領域の重心位置に対する前記平面形状の輪郭上の1つの点の回転角度をφとし、
X軸及びY軸を含むXY平面内において、複数の前記単位構成領域が二次元的に配置され、前記異屈折率領域は、正方格子の格子点位置に配置されており、
それぞれの前記単位構成領域のXY座標をぞれぞれの前記異屈折率領域の重心位置で与えられることとし、
前記単位構成領域のXY座標が(X,Y)の場合には、回転角度φが座標により異なっており、前記フォトニック結晶層の全体の中で、少なくとも3以上の異なる回転角度φを含み、
前記偏光板の透過軸方向θと、座標により異なる回転角度φにおける偏光の向きに応じて、場所毎に強度の異なる平面波が出射光として得られる、
ことを特徴とするレーザ装置。 - 前記レーザ光を発生する活性層と、
前記活性層を挟む上部及び下部クラッド層と、
前記上部又は下部クラッド層と前記活性層との間に設けられた前記フォトニック結晶層と、
を備えることを特徴とする請求項1に記載のレーザ装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013045824 | 2013-03-07 | ||
JP2013045824 | 2013-03-07 | ||
PCT/JP2014/056029 WO2014136955A1 (ja) | 2013-03-07 | 2014-03-07 | レーザ素子及びレーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2014136955A1 JPWO2014136955A1 (ja) | 2017-02-16 |
JP6276750B2 true JP6276750B2 (ja) | 2018-02-07 |
Family
ID=51491462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015504422A Active JP6276750B2 (ja) | 2013-03-07 | 2014-03-07 | レーザ装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9614352B2 (ja) |
JP (1) | JP6276750B2 (ja) |
DE (1) | DE112014001152T5 (ja) |
WO (1) | WO2014136955A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10879669B2 (en) | 2017-02-28 | 2020-12-29 | Kyoto University | Photonic crystal laser |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6788574B2 (ja) * | 2015-03-13 | 2020-11-25 | 浜松ホトニクス株式会社 | 半導体発光素子 |
US9991669B2 (en) * | 2016-07-25 | 2018-06-05 | Hamamatsu Photonics K.K. | Semiconductor light-emitting device and manufacturing method for the same |
JP6747910B2 (ja) | 2016-08-10 | 2020-08-26 | 浜松ホトニクス株式会社 | 発光装置 |
US11031751B2 (en) | 2016-08-10 | 2021-06-08 | Hamamatsu Photonics K.K. | Light-emitting device |
JP6747922B2 (ja) * | 2016-09-07 | 2020-08-26 | 浜松ホトニクス株式会社 | 半導体発光素子及び発光装置 |
US10734786B2 (en) | 2016-09-07 | 2020-08-04 | Hamamatsu Photonics K.K. | Semiconductor light emitting element and light emitting device including same |
DE112018001611T5 (de) * | 2017-03-27 | 2020-01-16 | Hamamatsu Photonics K.K. | Lichtemittierendes halbleiterelement und verfahren zur herstellung eines lichtemittierenden halbleiterelements |
US11646546B2 (en) | 2017-03-27 | 2023-05-09 | Hamamatsu Photonics K.K. | Semiconductor light emitting array with phase modulation regions for generating beam projection patterns |
US11637409B2 (en) | 2017-03-27 | 2023-04-25 | Hamamatsu Photonics K.K. | Semiconductor light-emitting module and control method therefor |
JP7081906B2 (ja) | 2017-06-02 | 2022-06-07 | 浜松ホトニクス株式会社 | 半導体発光素子及び半導体発光素子の位相変調層設計方法 |
JP6959042B2 (ja) | 2017-06-15 | 2021-11-02 | 浜松ホトニクス株式会社 | 発光装置 |
JP7036567B2 (ja) | 2017-10-20 | 2022-03-15 | 浜松ホトニクス株式会社 | 半導体発光素子 |
WO2019111787A1 (ja) | 2017-12-08 | 2019-06-13 | 浜松ホトニクス株式会社 | 発光装置およびその製造方法 |
JP7125867B2 (ja) * | 2018-06-20 | 2022-08-25 | 浜松ホトニクス株式会社 | 発光素子 |
WO2020045453A1 (ja) * | 2018-08-27 | 2020-03-05 | 浜松ホトニクス株式会社 | 発光装置 |
FR3099654B1 (fr) * | 2019-07-29 | 2021-08-06 | Commissariat Energie Atomique | source laser hybride comportant un guide d’onde integre a réseau de Bragg intercalaire |
CN114868074A (zh) * | 2019-12-27 | 2022-08-05 | 浜松光子学株式会社 | 空间光调制器和发光装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3561244B2 (ja) | 2001-07-05 | 2004-09-02 | 独立行政法人 科学技術振興機構 | 二次元フォトニック結晶面発光レーザ |
JP4445292B2 (ja) | 2002-02-08 | 2010-04-07 | パナソニック株式会社 | 半導体発光素子 |
JP2007258260A (ja) * | 2006-03-20 | 2007-10-04 | Kyoto Univ | 2次元フォトニック結晶面発光レーザ |
JP5104070B2 (ja) * | 2007-06-29 | 2012-12-19 | コニカミノルタホールディングス株式会社 | 2次元フォトニック結晶面発光レーザ |
JP5070161B2 (ja) | 2007-08-31 | 2012-11-07 | 独立行政法人科学技術振興機構 | フォトニック結晶レーザ |
JP5303221B2 (ja) * | 2008-08-29 | 2013-10-02 | 独立行政法人科学技術振興機構 | 2次元フォトニック結晶レーザ |
WO2011108510A1 (ja) * | 2010-03-01 | 2011-09-09 | 国立大学法人京都大学 | フォトニック結晶レーザ |
US8576890B2 (en) * | 2010-04-26 | 2013-11-05 | Hewlett-Packard Development Company, L.P. | Vertical-cavity surface-emitting laser |
JP5523291B2 (ja) * | 2010-12-03 | 2014-06-18 | キヤノン株式会社 | レーザアレイ及び露光用光源 |
JP5794687B2 (ja) * | 2011-08-12 | 2015-10-14 | 国立大学法人京都大学 | フォトニック結晶面発光レーザ |
-
2014
- 2014-03-07 WO PCT/JP2014/056029 patent/WO2014136955A1/ja active Application Filing
- 2014-03-07 JP JP2015504422A patent/JP6276750B2/ja active Active
- 2014-03-07 US US14/772,532 patent/US9614352B2/en active Active
- 2014-03-07 DE DE112014001152.5T patent/DE112014001152T5/de active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10879669B2 (en) | 2017-02-28 | 2020-12-29 | Kyoto University | Photonic crystal laser |
Also Published As
Publication number | Publication date |
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JPWO2014136955A1 (ja) | 2017-02-16 |
US9614352B2 (en) | 2017-04-04 |
WO2014136955A1 (ja) | 2014-09-12 |
US20160036201A1 (en) | 2016-02-04 |
DE112014001152T5 (de) | 2015-11-19 |
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