JPWO2014050464A1 - 基板処理装置、基板処理方法、及び半導体装置の製造方法 - Google Patents
基板処理装置、基板処理方法、及び半導体装置の製造方法 Download PDFInfo
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- JPWO2014050464A1 JPWO2014050464A1 JP2014538326A JP2014538326A JPWO2014050464A1 JP WO2014050464 A1 JPWO2014050464 A1 JP WO2014050464A1 JP 2014538326 A JP2014538326 A JP 2014538326A JP 2014538326 A JP2014538326 A JP 2014538326A JP WO2014050464 A1 JPWO2014050464 A1 JP WO2014050464A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 175
- 238000012545 processing Methods 0.000 title claims abstract description 172
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- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000003672 processing method Methods 0.000 title claims description 11
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67376—Closed carriers characterised by sealing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (3)
- 基板を処理する処理室と、 前記処理室に対し基板を搬送する搬送室と、 を備える基板処理装置であって、 前記搬送室は、 当該搬送室の筺体を形成する複数の壁体と、 前記複数の壁体が接合する接合部と、 当該搬送室と隔離された隔離空間を形成するように、前記接合部を覆う隔離空間形成部材と、を備え、 前記隔離空間を排気する排気部を備える基板処理装置。
- 基板を処理する処理室と、 前記処理室に対し基板を搬送する搬送室と、を備え、 前記搬送室は、 当該搬送室の筺体を形成する複数の壁体と、 前記複数の壁体が接合する接合部と、 当該搬送室と隔離された隔離空間を形成するように、前記接合部を覆う隔離空間形成部材と、 を備える基板処理装置を用いる基板処理方法であって、 前記搬送室から前記処理室へ基板を搬入する工程と、 前記隔離空間を排気する工程と、 前記処理室に搬入された基板を処理する工程と、 を備える基板処理方法。
- 基板を処理する処理室と、 記処理室に対し基板を搬送する搬送室と、を備え、 前記搬送室は、 当該搬送室の筺体を形成する複数の壁体と、 前記複数の壁体が接合する接合部と、 当該搬送室と隔離された隔離空間を形成するように、前記接合部を覆う隔離空間形成部材と、 を備える基板処理装置を用いる半導体装置の製造方法であって、 前記搬送室から前記処理室へ基板を搬入する工程と、 前記隔離空間を排気する工程と、 前記処理室に搬入された基板を処理する工程と、 を備える半導体装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2012214231 | 2012-09-27 | ||
JP2012214231 | 2012-09-27 | ||
PCT/JP2013/073742 WO2014050464A1 (ja) | 2012-09-27 | 2013-09-04 | 基板処理装置、基板処理方法、及び半導体装置の製造方法 |
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JPWO2014050464A1 true JPWO2014050464A1 (ja) | 2016-08-22 |
JP6016931B2 JP6016931B2 (ja) | 2016-10-26 |
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JP2014538326A Active JP6016931B2 (ja) | 2012-09-27 | 2013-09-04 | 基板処理装置、基板処理方法、及び半導体装置の製造方法 |
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US (1) | US9548229B2 (ja) |
JP (1) | JP6016931B2 (ja) |
KR (1) | KR101740613B1 (ja) |
WO (1) | WO2014050464A1 (ja) |
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TWI709163B (zh) | 2017-09-26 | 2020-11-01 | 日商國際電氣股份有限公司 | 基板處理裝置、半導體裝置之製造方法及程式 |
JP6906559B2 (ja) * | 2019-03-14 | 2021-07-21 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JP6900412B2 (ja) | 2019-03-20 | 2021-07-07 | 株式会社Kokusai Electric | 基板処理装置及び半導体装置の製造方法及びプログラム |
CN111235541B (zh) * | 2020-03-16 | 2022-10-14 | 湖南六方晶科技有限责任公司 | 一种pvd法制备金属氧化物涂层的刀具转架 |
CN117660922A (zh) * | 2023-11-29 | 2024-03-08 | 江苏协鑫特种材料科技有限公司 | 一种碳化硅涂层生产用气相沉积炉 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004273603A (ja) * | 2003-03-06 | 2004-09-30 | Tdk Corp | シール部材およびシール構造 |
JP2011044633A (ja) * | 2009-08-24 | 2011-03-03 | Hitachi Kokusai Electric Inc | 基板処理装置 |
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US3042158A (en) * | 1961-06-26 | 1962-07-03 | Michaels Art Bronze Company In | Display case construction |
NL8301917A (nl) * | 1983-05-31 | 1984-12-17 | Philips Nv | Werkwijze voor het meten van de snelheid en/of de lengte van voorwerpen en inrichting voor het uitvoeren van de werkwijze. |
JPH09209150A (ja) * | 1996-02-06 | 1997-08-12 | Tokyo Electron Ltd | 真空チャンバ及びその製造方法 |
AUPO380296A0 (en) * | 1996-11-25 | 1996-12-19 | Concrete Form Hire Pty Ltd | Clamping device for formwork panels |
JP3167970B2 (ja) | 1997-10-13 | 2001-05-21 | ティーディーケイ株式会社 | クリーンボックス、クリーン搬送方法及び装置 |
JP3484150B2 (ja) * | 2000-09-06 | 2004-01-06 | スガツネ工業株式会社 | 直交状角材の連結固定装置 |
JP2005026513A (ja) | 2003-07-03 | 2005-01-27 | Tokyo Electron Ltd | 処理装置 |
JP4486843B2 (ja) * | 2004-03-31 | 2010-06-23 | スガツネ工業株式会社 | 構造材の固定装置 |
US20070209593A1 (en) * | 2006-03-07 | 2007-09-13 | Ravinder Aggarwal | Semiconductor wafer cooling device |
JP4926530B2 (ja) | 2006-04-27 | 2012-05-09 | 東京エレクトロン株式会社 | シール部材、減圧容器、減圧処理装置、減圧容器のシール機構、および減圧容器の製造方法 |
JP2008294248A (ja) | 2007-05-25 | 2008-12-04 | Tokyo Electron Ltd | 基板搬送システム |
JP4684310B2 (ja) | 2007-08-14 | 2011-05-18 | 株式会社日立国際電気 | 基板処理装置 |
JP5654796B2 (ja) | 2010-07-20 | 2015-01-14 | 光洋サーモシステム株式会社 | 連続拡散処理装置 |
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2013
- 2013-09-04 US US14/431,678 patent/US9548229B2/en active Active
- 2013-09-04 JP JP2014538326A patent/JP6016931B2/ja active Active
- 2013-09-04 KR KR1020157004094A patent/KR101740613B1/ko active IP Right Grant
- 2013-09-04 WO PCT/JP2013/073742 patent/WO2014050464A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004273603A (ja) * | 2003-03-06 | 2004-09-30 | Tdk Corp | シール部材およびシール構造 |
JP2011044633A (ja) * | 2009-08-24 | 2011-03-03 | Hitachi Kokusai Electric Inc | 基板処理装置 |
Also Published As
Publication number | Publication date |
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US9548229B2 (en) | 2017-01-17 |
JP6016931B2 (ja) | 2016-10-26 |
US20150279712A1 (en) | 2015-10-01 |
KR20150036670A (ko) | 2015-04-07 |
KR101740613B1 (ko) | 2017-05-26 |
WO2014050464A1 (ja) | 2014-04-03 |
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