JPWO2011145455A1 - セラミック体およびその製造方法 - Google Patents
セラミック体およびその製造方法 Download PDFInfo
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- JPWO2011145455A1 JPWO2011145455A1 JP2012515811A JP2012515811A JPWO2011145455A1 JP WO2011145455 A1 JPWO2011145455 A1 JP WO2011145455A1 JP 2012515811 A JP2012515811 A JP 2012515811A JP 2012515811 A JP2012515811 A JP 2012515811A JP WO2011145455 A1 JPWO2011145455 A1 JP WO2011145455A1
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- ceramic
- ceramic body
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- conductor
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- 239000000919 ceramic Substances 0.000 title claims abstract description 155
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000004020 conductor Substances 0.000 claims abstract description 42
- 239000000178 monomer Substances 0.000 claims abstract description 30
- 239000012530 fluid Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 20
- 229920000642 polymer Polymers 0.000 claims abstract description 17
- 230000000379 polymerizing effect Effects 0.000 claims abstract description 10
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 52
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 26
- 239000001569 carbon dioxide Substances 0.000 claims description 26
- 239000004642 Polyimide Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 238000007747 plating Methods 0.000 description 22
- 239000003985 ceramic capacitor Substances 0.000 description 21
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 18
- 230000007547 defect Effects 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920005575 poly(amic acid) Polymers 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 231100000956 nontoxicity Toxicity 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000003505 polymerization initiator Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
- H10N30/053—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by integrally sintering piezoelectric or electrostrictive bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/872—Connection electrodes of multilayer piezoelectric or electrostrictive devices, e.g. external electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
Abstract
Description
Claims (6)
- 内部に導電体を含むセラミック体であって、
導電体とセラミック体の間の空隙にポリマーが充填されている、セラミック体。 - 内部に導電体を含むセラミック体の製造方法であって、
導電体とセラミック体の間の空隙に、モノマーを含む超臨界流体を浸入させるステップと、
前記モノマーを重合させることにより、前記導電体と前記セラミック体の間の空隙にポリマーを充填するステップとを備えた、セラミック体の製造方法。 - 前記超臨界流体は、超臨界状態の二酸化炭素である、請求項2に記載のセラミック体の製造方法。
- 前記セラミック体は、積層された複数のセラミック層と、この複数のセラミック層の間に介在した導電体層とを含むセラミック積層体である、請求項2または請求項3に記載のセラミック体の製造方法。
- 前記セラミック積層体において、前記導電体層と前記セラミック層の間の界面が露出している、請求項4に記載のセラミック体の製造方法。
- 前記モノマーを重合させることにより得られたポリマーが、ポリイミドである、請求項2から請求項5までのいずれか1項に記載のセラミック体の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012515811A JP5565462B2 (ja) | 2010-05-21 | 2011-05-02 | セラミック体およびその製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010117499 | 2010-05-21 | ||
JP2010117499 | 2010-05-21 | ||
PCT/JP2011/060511 WO2011145455A1 (ja) | 2010-05-21 | 2011-05-02 | セラミック体およびその製造方法 |
JP2012515811A JP5565462B2 (ja) | 2010-05-21 | 2011-05-02 | セラミック体およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011145455A1 true JPWO2011145455A1 (ja) | 2013-07-22 |
JP5565462B2 JP5565462B2 (ja) | 2014-08-06 |
Family
ID=44991566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012515811A Active JP5565462B2 (ja) | 2010-05-21 | 2011-05-02 | セラミック体およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20130076203A1 (ja) |
JP (1) | JP5565462B2 (ja) |
CN (1) | CN102893349B (ja) |
WO (1) | WO2011145455A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016032029A1 (ko) * | 2014-08-29 | 2016-03-03 | 주식회사 와이솔 | 적층형 압전 세라믹 소자 |
KR101580411B1 (ko) * | 2014-09-22 | 2015-12-23 | 삼성전기주식회사 | 칩 전자부품 및 칩 전자부품의 실장 기판 |
EP3345228B1 (en) * | 2015-09-02 | 2018-12-26 | Koninklijke Philips N.V. | Actuator device based on an electroactive or photoactive polymer |
US10770230B2 (en) | 2017-07-04 | 2020-09-08 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic capacitor and method of manufacturing the same |
JP7426771B2 (ja) * | 2018-04-11 | 2024-02-02 | 太陽誘電株式会社 | 積層セラミックコンデンサの製造方法 |
KR102560377B1 (ko) * | 2018-04-25 | 2023-07-27 | 삼성전기주식회사 | 인덕터 |
KR102603410B1 (ko) * | 2019-06-28 | 2023-11-17 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층형 전자부품 및 적층형 전자부품의 제조 방법 |
KR102262902B1 (ko) * | 2019-08-23 | 2021-06-09 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 그 제조 방법 |
KR20220098620A (ko) * | 2021-01-04 | 2022-07-12 | 삼성전기주식회사 | 적층형 전자 부품 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3635759A (en) * | 1969-04-04 | 1972-01-18 | Gulton Ind Inc | Method of eliminating voids in ceramic bodies |
US4552786A (en) * | 1984-10-09 | 1985-11-12 | The Babcock & Wilcox Company | Method for densification of ceramic materials |
JPH02148789A (ja) * | 1988-03-11 | 1990-06-07 | Internatl Business Mach Corp <Ibm> | 電子回路基板 |
JPH0793236B2 (ja) * | 1988-11-16 | 1995-10-09 | 松下電器産業株式会社 | フイルムコンデンサおよびその製造方法 |
JPH02301113A (ja) * | 1989-05-16 | 1990-12-13 | Tdk Corp | 積層セラミック電子部品およびその製造法 |
JPH07123097B2 (ja) * | 1990-06-22 | 1995-12-25 | 株式会社村田製作所 | 積層コンデンサの製造方法 |
KR940010559B1 (ko) * | 1991-09-11 | 1994-10-24 | 한국과학기술연구원 | 적층 세라믹 캐패시터의 제조방법 |
US5559198A (en) * | 1994-07-08 | 1996-09-24 | Minnesota Mining And Manufacturing Company | Process for preparing poly(vinyl trifluoroacetate) and poly(vinyltrifluoroacetate/vinyl ester) copolymers in supercritical Co.sub. |
JPH10208907A (ja) * | 1997-01-28 | 1998-08-07 | Matsushita Electric Ind Co Ltd | 電子部品とその製造方法 |
EP0934819A4 (en) * | 1997-08-27 | 2000-06-07 | Toyoda Chuo Kenkyusho Kk | COATED OBJECT AND METHOD FOR MANUFACTURING THE OBJECT |
JP2000188228A (ja) * | 1998-12-21 | 2000-07-04 | Murata Mfg Co Ltd | チップ型電子部品 |
JP3927789B2 (ja) * | 2000-11-13 | 2007-06-13 | 松下電器産業株式会社 | 焼結体の製造方法 |
JP2005101547A (ja) * | 2003-08-26 | 2005-04-14 | Tdk Corp | 電子部品の製造方法および電子部品 |
JP2006093532A (ja) * | 2004-09-27 | 2006-04-06 | Matsushita Electric Ind Co Ltd | 電子部品 |
US7500397B2 (en) * | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
JP4767197B2 (ja) * | 2007-02-27 | 2011-09-07 | 三洋電機株式会社 | 固体電解コンデンサの製造方法 |
CN101202163B (zh) * | 2007-11-16 | 2010-06-16 | 东莞市易利嘉电子有限公司 | 一种陶瓷电容器的防潮生产工艺 |
-
2011
- 2011-05-02 WO PCT/JP2011/060511 patent/WO2011145455A1/ja active Application Filing
- 2011-05-02 JP JP2012515811A patent/JP5565462B2/ja active Active
- 2011-05-02 CN CN201180024697.0A patent/CN102893349B/zh active Active
-
2012
- 2012-11-16 US US13/678,683 patent/US20130076203A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20130076203A1 (en) | 2013-03-28 |
WO2011145455A1 (ja) | 2011-11-24 |
CN102893349B (zh) | 2016-01-20 |
JP5565462B2 (ja) | 2014-08-06 |
CN102893349A (zh) | 2013-01-23 |
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