JPWO2011016097A1 - ウエハトレイおよび試験装置 - Google Patents
ウエハトレイおよび試験装置 Download PDFInfo
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- JPWO2011016097A1 JPWO2011016097A1 JP2009534384A JP2009534384A JPWO2011016097A1 JP WO2011016097 A1 JPWO2011016097 A1 JP WO2011016097A1 JP 2009534384 A JP2009534384 A JP 2009534384A JP 2009534384 A JP2009534384 A JP 2009534384A JP WO2011016097 A1 JPWO2011016097 A1 JP WO2011016097A1
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- wafer
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- 238000012360 testing method Methods 0.000 title claims abstract description 206
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000000523 sample Substances 0.000 claims description 114
- 239000012528 membrane Substances 0.000 claims description 19
- 239000003507 refrigerant Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 4
- 238000004904 shortening Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 180
- 239000003351 stiffener Substances 0.000 description 35
- 239000000758 substrate Substances 0.000 description 29
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000011295 pitch Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000003014 reinforcing effect Effects 0.000 description 6
- 238000003825 pressing Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000006837 decompression Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2893—Handling, conveying or loading, e.g. belts, boats, vacuum fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
Claims (8)
- 半導体ウエハ上に形成された複数の被試験デバイスを試験する試験装置に装着して用いられるウエハトレイであって、
前記半導体ウエハを真空吸着により前記ウエハトレイに固定するための第1流路と、
前記ウエハトレイを真空吸着により前記試験装置に固定するための第2流路と、
少なくとも前記半導体ウエハを載置する載置面を加熱するためのヒータとを有するウエハトレイ。 - 少なくとも前記載置面を冷却するための冷媒または温媒を循環させる第3流路を更に有する請求項1に記載のウエハトレイ。
- 前記第1流路と前記第2流路は連結されている請求項1または2に記載のウエハトレイ。
- 前記試験装置は、前記第1流路に接続される第1排気装置と前記第2流路に接続される第2排気装置を有し、
前記第1流路の真空度を前記第2流路の真空度よりも高くなるように、前記第1排気装置および前記第2排気装置の駆動を制御する制御部を更に有する、請求項1または2に記載のウエハトレイを用いる試験装置。 - 前記試験装置は、前記半導体ウエハに重ね合わされる接触面において前記複数の被試験デバイスの電気接点にそれぞれ接続される電気接点が配されたプローブカードを有し、
前記ウエハトレイは、前記プローブカードとの間で形成される密封空間を利用した真空吸着により前記試験装置に固定される、請求項1から3のいずれかに記載のウエハトレイを用いる試験装置。 - 前記プローブカードは、少なくとも、ハード基板である配線基板と、弾性シートに前記電気接点が配されたメンブレンユニットとから構成され、
前記密封空間は、前記メンブレンユニットに設けられた貫通穴を介して、前記ウエハトレイと前記配線基板との間に形成される請求項5に記載の試験装置。 - 前記プローブカードは前記試験装置に対して着脱可能であり、
前記密封空間における真空吸着を維持したまま、前記プローブカード、前記ウエハ及び前記ウエハトレイを一体的に移動することができる請求項5または6に記載の試験装置。 - 前記半導体ウエハが前記ウエハトレイに載置されていないときには、前記ウエハトレイは、ダミーウエハを載置して前記試験装置に固定される請求項5から7のいずれか1項に記載の試験装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2009/003831 WO2011016097A1 (ja) | 2009-08-07 | 2009-08-07 | ウエハトレイおよび試験装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4457180B1 JP4457180B1 (ja) | 2010-04-28 |
JPWO2011016097A1 true JPWO2011016097A1 (ja) | 2013-01-10 |
Family
ID=42260268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009534384A Active JP4457180B1 (ja) | 2009-08-07 | 2009-08-07 | ウエハトレイおよび試験装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8513962B2 (ja) |
JP (1) | JP4457180B1 (ja) |
KR (1) | KR100990198B1 (ja) |
TW (1) | TW201117320A (ja) |
WO (1) | WO2011016097A1 (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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US9176186B2 (en) * | 2009-08-25 | 2015-11-03 | Translarity, Inc. | Maintaining a wafer/wafer translator pair in an attached state free of a gasket disposed |
KR101784024B1 (ko) * | 2010-01-08 | 2017-10-10 | 포톤 다이나믹스, 인코포레이티드 | 자동 프로브 설정 스테이션 및 그에 따른 방법 |
US8643394B2 (en) * | 2010-04-16 | 2014-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Non-reflow probe card structure |
JP2011242338A (ja) * | 2010-05-20 | 2011-12-01 | Advantest Corp | 試験装置 |
SG189154A1 (en) * | 2010-09-28 | 2013-05-31 | Advanced Inquiry Systems Inc | Wafer testing systems and associated methods of use and manufacture |
US8860448B2 (en) * | 2011-07-15 | 2014-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Test schemes and apparatus for passive interposers |
JP2013053991A (ja) * | 2011-09-06 | 2013-03-21 | Seiko Epson Corp | ハンドラー及び部品検査装置 |
JP5789206B2 (ja) * | 2011-12-08 | 2015-10-07 | 東京エレクトロン株式会社 | ウエハ検査用インターフェース及びウエハ検査装置 |
US11931740B2 (en) | 2012-02-13 | 2024-03-19 | Neumodx Molecular, Inc. | System and method for processing and detecting nucleic acids |
US9604213B2 (en) | 2012-02-13 | 2017-03-28 | Neumodx Molecular, Inc. | System and method for processing and detecting nucleic acids |
US11485968B2 (en) | 2012-02-13 | 2022-11-01 | Neumodx Molecular, Inc. | Microfluidic cartridge for processing and detecting nucleic acids |
US9637775B2 (en) | 2012-02-13 | 2017-05-02 | Neumodx Molecular, Inc. | System and method for processing biological samples |
WO2013123035A1 (en) | 2012-02-13 | 2013-08-22 | Molecular Systems Corporation | System and method for processing and detecting nucleic acids |
KR102000950B1 (ko) * | 2012-02-29 | 2019-07-17 | (주)제이티 | 소자검사장치 |
JP6072638B2 (ja) * | 2013-07-29 | 2017-02-01 | 東京エレクトロン株式会社 | プローブ装置 |
KR101549849B1 (ko) * | 2014-02-18 | 2015-09-03 | (주)솔리드메카 | 가혹조건 조성구조가 구비된 메모리 패키지 테스트용 고정지그 |
SG11201707468QA (en) * | 2015-05-26 | 2017-10-30 | Rasco Gmbh | A boat, assembly & method for handling electronic components |
JP6827385B2 (ja) * | 2017-08-03 | 2021-02-10 | 東京エレクトロン株式会社 | 検査システム |
JP7281250B2 (ja) | 2018-05-11 | 2023-05-25 | 株式会社アドバンテスト | 試験用キャリア |
CN108919007A (zh) * | 2018-07-16 | 2018-11-30 | 常州信息职业技术学院 | 微电子测试系统 |
JP7134569B2 (ja) * | 2018-12-10 | 2022-09-12 | 株式会社ディスコ | 試験装置 |
JP7464848B2 (ja) | 2020-10-12 | 2024-04-10 | 山一電機株式会社 | プローブカード及びその設置方法 |
WO2022235005A1 (ko) * | 2021-05-06 | 2022-11-10 | 화인인스트루먼트 (주) | 프로브 어레이 그리퍼 및 이를 포함하는 프로브 어레이 본딩 장비 |
TWI821694B (zh) * | 2021-06-22 | 2023-11-11 | 萬潤科技股份有限公司 | 電子元件測試裝置及測試方法 |
CN114545188A (zh) * | 2022-03-02 | 2022-05-27 | 深圳市卓晶微智能机器人科技有限公司 | 一种适用性强的半导体测试设备 |
CN114487789A (zh) * | 2022-04-02 | 2022-05-13 | 浙江清华柔性电子技术研究院 | 一种晶圆检测探头和晶圆检测系统 |
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JP4145293B2 (ja) | 2004-12-28 | 2008-09-03 | 株式会社ルネサステクノロジ | 半導体検査装置および半導体装置の製造方法 |
JP2009099630A (ja) * | 2007-10-12 | 2009-05-07 | Japan Electronic Materials Corp | 半導体検査装置 |
-
2009
- 2009-08-07 JP JP2009534384A patent/JP4457180B1/ja active Active
- 2009-08-07 WO PCT/JP2009/003831 patent/WO2011016097A1/ja active Application Filing
- 2009-08-07 KR KR1020107017897A patent/KR100990198B1/ko active IP Right Grant
-
2010
- 2010-08-05 TW TW099126126A patent/TW201117320A/zh unknown
- 2010-09-13 US US12/881,137 patent/US8513962B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20110043237A1 (en) | 2011-02-24 |
TW201117320A (en) | 2011-05-16 |
US8513962B2 (en) | 2013-08-20 |
KR100990198B1 (ko) | 2010-10-29 |
WO2011016097A1 (ja) | 2011-02-10 |
JP4457180B1 (ja) | 2010-04-28 |
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