JPWO2010026990A1 - 高周波回路パッケージおよびセンサモジュール - Google Patents
高周波回路パッケージおよびセンサモジュール Download PDFInfo
- Publication number
- JPWO2010026990A1 JPWO2010026990A1 JP2010527796A JP2010527796A JPWO2010026990A1 JP WO2010026990 A1 JPWO2010026990 A1 JP WO2010026990A1 JP 2010527796 A JP2010527796 A JP 2010527796A JP 2010527796 A JP2010527796 A JP 2010527796A JP WO2010026990 A1 JPWO2010026990 A1 JP WO2010026990A1
- Authority
- JP
- Japan
- Prior art keywords
- frequency circuit
- frequency
- dielectric substrate
- conductor
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 137
- 239000004020 conductor Substances 0.000 claims abstract description 128
- 239000002344 surface layer Substances 0.000 claims abstract description 63
- 229910000679 solder Inorganic materials 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 21
- 238000003475 lamination Methods 0.000 claims 1
- 239000011347 resin Substances 0.000 description 55
- 229920005989 resin Polymers 0.000 description 55
- 230000005540 biological transmission Effects 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 18
- 238000002955 isolation Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
- H01P3/081—Microstriplines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
- H05K1/0219—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/0243—Printed circuits associated with mounted high frequency components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
- H01L2223/6622—Coaxial feed-throughs in active or passive substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0652—Bump or bump-like direct electrical connections from substrate to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1903—Structure including wave guides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1903—Structure including wave guides
- H01L2924/19032—Structure including wave guides being a microstrip line type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
- H05K1/0219—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
- H05K1/0222—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors for shielding around a single via or around a group of vias, e.g. coaxial vias or vias surrounded by a grounded via fence
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09618—Via fence, i.e. one-dimensional array of vias
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10151—Sensor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10734—Ball grid array [BGA]; Bump grid array
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Waveguide Connection Structure (AREA)
- Waveguides (AREA)
- Combinations Of Printed Boards (AREA)
- Wire Bonding (AREA)
Abstract
Description
1)高周波半導体チップ22と制御アンテナ基板1に搭載された制御回路とのDCバイアス、信号接続のためのインタフェース
2)制御アンテナ基板1に形成されたトリプレート線路6との高周波信号(LOCAL信号)の接続
3)個別回路(ミキサ、電力分配器など)の動作安定のためのキャビティ形成
4)複数のチャネル間の空間アイソレーションの確保
5)受信回路全体の電磁シールド(蓋体の代わり)
6)不要波の漏洩防止
2 樹脂アンテナ基板
3 マザー制御基板
4 送信導波管
5 受信導波管
6 トリプレート線路
10 BGAボール
20 高周波回路搭載基板(高周波樹脂基板)
21 高周波回路
22 高周波半導体チップ
30 BGAボール
30G、30G1、30G2、30G3 BGAボール(接地接続)
30S、30S1、30S2 BGAボール(信号用)
40、43 信号ビア
41 導体パッド
42 信号線路
50 導波管−マイクロストリップ変換器
51 BGA導波管
52 導波管開口
53 バックショート
54 先端開放プローブ
55 誘電体が露出された部分
60 誘電体
65 導体ランド(接地接続)
66 導体ランド(信号接続)
70 マイクロストリップ線路
75 電力分配器
76 チップ抵抗器
80 ミキサ
81 APDP
90 高周波回路搭載基板
91 送信系の高周波回路
92 送信用の高周波半導体チップ
100 Auバンプ
GB 接地導体ビア
GP 接地導体パターン
RX 受信回路パッケージ
TX 送信回路パッケージ
Claims (11)
- 高周波回路が裏面表層に設けられ、該裏面表層に前記高周波回路の接地導体と同電位で、かつ前記高周波回路を囲むように第1の接地導体が形成される第1の誘電体基板と、
前記高周波回路を挟むように前記第1の誘電体基板を搭載し、前記高周波回路を駆動する信号を供給する線路が形成され、前記高周波回路に対向する部位に第2の接地導体が形成された第2の誘電体基板と、
を備え、前記第1の誘電体基板の第1の接地導体上に前記高周波回路を囲むように複数の第1のランドを設け、前記第2の誘電体基板の表層の前記複数の第1のランドに対向する位置に前記第2の接地導体に電気的に接続される複数の第2のランドを設け、
第1のランドおよび第2のランド間を接続する複数の導電性接続部材を備え、
前記高周波回路を前記複数の導電性接続部材と第1および第2の接地導体と前記高周波回路の接地導体とによって囲まれた擬似遮蔽キャビティ内に収納することを特徴とする高周波回路パッケージ。 - 上記導電性接続部材は、半田ボールであることを特徴とする請求項1に記載の高周波回路パッケージ。
- 裏面表層に高周波回路を形成、配設し、該裏面表層に前記高周波回路の接地導体と同電位で、かつ前記高周波回路を囲むように第1の接地導体を形成した第1の誘電体基板と、
前記高周波回路を挟むように前記第1の誘電体基板を搭載し、前記高周波回路に対向する部位に第2の接地導体を形成した第2の誘電体基板と、
前記第1および第2の接地導体の相互に対向する位置で、かつ前記高周波回路を囲むように、高周波回路の動作信号波長の1/4未満の間隔で形成された複数の導体ランドとを接続する半田ボールと、
を備え、
前記半田ボールにより、前記第1および第2の誘電体基板と相対接続することにより形成される、前記複数の半田ボールと前記高周波回路の接地導体と、第1および第2の接地導体と、前記高周波回路の接地導体とから成る擬似遮蔽キャビティ内に前記高周波回路を収納する高周波回路パッケージであって、
前記第1の誘電体基板は、
前記高周波回路に接続され、裏面表層に形成されたマイクロストリップ線路と、
前記マイクロストリップ線路の先端開放部の周囲を取り囲むように、前記第1の接地導体の一部を抜いて形成した導波管開口と、
前記導波管開口に電気的に接続され、前記導波管開口から基板積層方向に高周波信号の基板内実効伝搬波長の略1/4の長さを有する先端短絡誘電体導波管と、
を備え、
前記第2の誘電体基板は、
前記導波管開口部に対向する位置に基板積層方向に形成された導波管、
を備え、
前記第1および第2の接地導体に、各々互いに対向する位置に、前記導波管開口および前記導波管を囲むように、高周波信号の自由空間伝搬波長の1/4以下の間隔で配列された複数の導波管用導体ランドを、半田ボールによって相互に接続することにより、前記高周波回路の入出力信号を、前記第2の誘電体基板の導波管から取り出すことを特徴とする高周波回路パッケージ。 - 裏面表層に高周波回路を形成、配設し、該裏面表層に前記高周波回路の接地導体と同電位で、かつ前記高周波回路を囲むように第1の接地導体を形成した第1の誘電体基板と、
前記高周波回路を挟むように前記第1の誘電体基板を搭載し、前記高周波回路に対向する部位に第2の接地導体を形成した第2の誘電体基板と、
前記第1および第2の接地導体の相互に対向する位置で、かつ前記高周波回路を囲むように、高周波回路の動作信号波長の1/4未満の間隔で形成された複数の導体ランドとを接続する半田ボールと、
を備え、
前記半田ボールにより、前記第1および第2の誘電体基板と相対接続することにより形成される、前記複数の半田ボールと前記高周波回路の地導体と、第1および第2の接地導体と、前記高周波回路の接地導体とから成る擬似遮蔽キャビティ内に前記高周波回路を収納する高周波回路パッケージであって、
前記第1の誘電体基板は、裏面表層に
前記高周波回路に接続され、高周波回路を駆動するためのDCバイアス、制御信号を伝送する第1の配線パターンと、
前記配線パターンに接続される第1の信号用ランドと、
を備え、
前記第2の誘電体基板は、
前記高周波回路を駆動するためのDC電源および制御回路を搭載し、
前記第1の誘電体基板搭載面に、
前記DC電源および制御回路からの信号を伝送する第2の配線パターンと、
前記第2の配線パターンに接続され、前記第1の信号ランドに対向する位置に配置された複数の第2の信号用ランドと、
を備え、
対向する前記第1および第2の信号用ランドを半田ボールによって、相互に接続することにより、前記第2の誘電体基板上のDC電源および制御回路によって、前記第1の誘電体基板上の高周波回路を駆動することを特徴とする高周波回路パッケージ。 - 高周波回路を収納する高周波回路パッケージにおいて、
裏面表層に形成された前記高周波回路に接続され、裏面表層に形成されたマイクロストリップ線路と、
前記マイクロストリップ線路の先端開放部の周囲を取り囲むように形成された導波管開口であって、裏面表層に形成された第1の接地導体の抜きとしての導波管開口と、
前記導波管開口から基板積層方向に高周波信号の基板内実効伝搬波長の略1/4の長さを有する先端短絡誘電体導波管と、
前記第1の接地導体上に前記導波管開口を囲むように、高周波信号の自由空間伝搬波長の1/4以下の間隔で配列された第1の半田ボール搭載用導体ランド群と、
前記高周波回路の周囲に配置された第2の接地導体と、
前記高周波回路および前記マイクロストリップ線路のリターン導体として機能し、かつ基板内層に形成された第3の接地導体と、
前記第2の接地導体上に前記高周波回路を囲むように、高周波信号の自由空間伝搬波長の1/4以下の間隔で配列された第2の半田ボール搭載用導体ランド群と、
前記高周波回路を駆動するDCバイアス、制御信号を伝送するための第3の半田ボール搭載用導体ランド群と、
を有する高周波回路搭載基板と、
前記高周波回路搭載基板の高周波回路に対向する部位に形成された第4の接地導体と、
該第3の接地導体と電気的に接続され、前記第1、第2および第3の半田ボール搭載用導体ランド群の対向位置に形成される複数の第4の導体ランド群と、
前記高周波回路搭載基板の導波管開口部に対向する位置に基板積層方向に形成された導波管と、
前記高周波回路を駆動するDCバイアス、制御信号を伝送するための線路と、
を有し、前記高周波回路を挟むように前記高周波回路搭載基板を搭載するマザー制御基板と、
前記第1〜第3の半田ボール搭載用導体ランド群と、前記複数の第4の導体ランド群とを接続する半田ボール群と、
を備え、第2の半田ボール搭載用導体ランド群に接続される半田ボールおよび前記第2〜第4の接地導体によって形成された擬似遮蔽キャビティに前記高周波回路を収納することを特徴とする高周波回路パッケージ。 - 前記第2の誘電体基板に形成された第2の接地導体は、前記高周波回路を囲むように、高周波回路の動作信号の1/4未満の間隔で形成された複数の導体ランドに電気的に接続され、かつ前記第2の誘電体基板の表層または内層に形成されることを特徴とする請求項3または4に記載の高周波回路パッケージ。
- 前記第1および第2の接地導体の相互に対向する位置で、かつ前記高周波回路を囲むように、所定の(高周波回路の動作信号波長の1/4未満の)間隔で形成された複数の導体ランドとを接続する半田ボールによって囲まれた領域の縦横寸法は、高周波信号の自由空間伝搬波長の1/2未満であるか、あるいは1/2となる長さを避けたことを特徴とする請求項1〜4のいずれか一つに記載の高周波回路パッケージ。
- 前記第1の誘電体基板の裏面表層には、複数の前記高周波回路が形成、配設され、
前記所定の(高周波回路の動作信号波長の1/4未満の)間隔で形成された複数の導体ランドおよび複数の半田ボールは、複数の高周波回路をそれぞれ別個に囲むように配設され、
各々、別個に区画された擬似遮蔽キャビティに収納されたことを特徴とする、請求項1〜4のいずれか一つに記載の高周波回路パッケージ。 - 前記第1の誘電体基板の裏面表層には、複数の前記高周波回路が形成、配設され、
前記第1の誘電体基板は、前記複数の高周波回路に各々接続される複数の前記マイクロストリップ線路と、複数の前記導波管開口と、複数の前記先端短絡導波管とを備え、
前記第2の誘電体基板は、
前記複数の導波管開口部に対向する位置に基板積層方向に形成された複数の前記導波管を備え、
前記第1および第2の接地導体に、各々互いに対向する位置に、前記複数の導波管開口および前記複数の導波管を囲むように、各々、高周波信号の自由空間伝搬波長の1/4以下の間隔で配列された複数の導波管用導体ランドを、各々、半田ボールによって相互に接続することにより、前記複数の各々の高周波回路の入出力信号を、前記第2の誘電体基板の複数の各々の導波管から取り出すことを特徴とする、請求項3に記載の高周波回路パッケージ。 - 前記高周波回路は、前記第1の誘電体基板と前記第2の誘電体基板の間で非気密に収容されたことを特徴とする請求項1〜9のいずれか一つに記載の高周波回路パッケージ。
- 請求項1〜10の何れか一つに記載の高周波回路パッケージと、前記第2の誘電体基板の前記第1の誘電体基板の搭載面と反対側に配置され、前記導波管に接続されたアンテナを備えたことを特徴とするセンサモジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010527796A JP5371997B2 (ja) | 2008-09-05 | 2009-09-02 | 高周波回路パッケージおよびセンサモジュール |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008228835 | 2008-09-05 | ||
JP2008228835 | 2008-09-05 | ||
JP2010527796A JP5371997B2 (ja) | 2008-09-05 | 2009-09-02 | 高周波回路パッケージおよびセンサモジュール |
PCT/JP2009/065345 WO2010026990A1 (ja) | 2008-09-05 | 2009-09-02 | 高周波回路パッケージおよびセンサモジュール |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011065740A Division JP5517982B2 (ja) | 2008-09-05 | 2011-03-24 | 高周波回路パッケージおよびセンサモジュール |
JP2013033467A Division JP5519815B2 (ja) | 2008-09-05 | 2013-02-22 | 高周波回路パッケージおよびセンサモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010026990A1 true JPWO2010026990A1 (ja) | 2012-02-02 |
JP5371997B2 JP5371997B2 (ja) | 2013-12-18 |
Family
ID=41797156
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010527796A Active JP5371997B2 (ja) | 2008-09-05 | 2009-09-02 | 高周波回路パッケージおよびセンサモジュール |
JP2011065740A Active JP5517982B2 (ja) | 2008-09-05 | 2011-03-24 | 高周波回路パッケージおよびセンサモジュール |
JP2013033467A Active JP5519815B2 (ja) | 2008-09-05 | 2013-02-22 | 高周波回路パッケージおよびセンサモジュール |
JP2014077118A Active JP5775194B2 (ja) | 2008-09-05 | 2014-04-03 | 高周波回路パッケージおよびセンサモジュール |
JP2015133661A Expired - Fee Related JP5960886B2 (ja) | 2008-09-05 | 2015-07-02 | 高周波回路パッケージおよびセンサモジュール |
JP2016124203A Expired - Fee Related JP6180592B2 (ja) | 2008-09-05 | 2016-06-23 | 高周波回路パッケージおよびセンサモジュール |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011065740A Active JP5517982B2 (ja) | 2008-09-05 | 2011-03-24 | 高周波回路パッケージおよびセンサモジュール |
JP2013033467A Active JP5519815B2 (ja) | 2008-09-05 | 2013-02-22 | 高周波回路パッケージおよびセンサモジュール |
JP2014077118A Active JP5775194B2 (ja) | 2008-09-05 | 2014-04-03 | 高周波回路パッケージおよびセンサモジュール |
JP2015133661A Expired - Fee Related JP5960886B2 (ja) | 2008-09-05 | 2015-07-02 | 高周波回路パッケージおよびセンサモジュール |
JP2016124203A Expired - Fee Related JP6180592B2 (ja) | 2008-09-05 | 2016-06-23 | 高周波回路パッケージおよびセンサモジュール |
Country Status (5)
Country | Link |
---|---|
US (3) | US9070961B2 (ja) |
EP (2) | EP2333828B1 (ja) |
JP (6) | JP5371997B2 (ja) |
CN (1) | CN102144289B (ja) |
WO (1) | WO2010026990A1 (ja) |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2333828B1 (en) * | 2008-09-05 | 2019-11-20 | Mitsubishi Electric Corporation | High-frequency circuit package, and sensor module |
US8723616B2 (en) | 2009-02-27 | 2014-05-13 | Mitsubishi Electric Corporation | Waveguide-microstrip line converter having connection conductors spaced apart by different distances |
US8624775B2 (en) | 2009-04-23 | 2014-01-07 | Mitsubishi Electric Corporation | Radar apparatus and antenna device |
US8531023B2 (en) | 2009-07-17 | 2013-09-10 | Nec Corporation | Substrate for semiconductor package and method of manufacturing thereof |
US8169060B2 (en) | 2010-03-29 | 2012-05-01 | Infineon Technologies Ag | Integrated circuit package assembly including wave guide |
JP5724214B2 (ja) * | 2010-05-24 | 2015-05-27 | 日本電気株式会社 | 通信モジュール |
JP5172925B2 (ja) * | 2010-09-24 | 2013-03-27 | 株式会社東芝 | 無線装置 |
US9693492B2 (en) | 2011-04-14 | 2017-06-27 | Mitsubishi Electric Corporation | High-frequency package |
WO2013080560A1 (ja) * | 2011-12-02 | 2013-06-06 | パナソニック株式会社 | 無線モジュール |
TWI593334B (zh) * | 2011-12-07 | 2017-07-21 | Panasonic Ip Man Co Ltd | Wireless module |
US8866291B2 (en) * | 2012-02-10 | 2014-10-21 | Raytheon Company | Flip-chip mounted microstrip monolithic microwave integrated circuits (MMICs) |
CN103650234A (zh) * | 2012-02-15 | 2014-03-19 | 松下电器产业株式会社 | 无线模块 |
US9577314B2 (en) * | 2012-09-12 | 2017-02-21 | International Business Machines Corporation | Hybrid on-chip and package antenna |
JP6020054B2 (ja) | 2012-11-05 | 2016-11-02 | 株式会社デンソー | 高周波モジュール |
CN105590902B (zh) * | 2013-02-08 | 2019-02-19 | 日月光半导体制造股份有限公司 | 天线封装模块及其制造方法 |
JP5974956B2 (ja) * | 2013-03-29 | 2016-08-23 | 三菱電機株式会社 | 高周波パッケージ |
JP6045436B2 (ja) | 2013-05-02 | 2016-12-14 | ルネサスエレクトロニクス株式会社 | 電子装置 |
KR101531098B1 (ko) * | 2013-08-22 | 2015-06-23 | 삼성전기주식회사 | 통신 패키지 모듈 |
US9337522B2 (en) * | 2013-10-30 | 2016-05-10 | Infineon Technologies Ag | Millimeter-wave system including a waveguide transition connected to a transmission line and surrounded by a plurality of vias |
JP6135485B2 (ja) * | 2013-12-05 | 2017-05-31 | 三菱電機株式会社 | 高周波モジュール |
US9651585B2 (en) * | 2013-12-18 | 2017-05-16 | National Instruments Corporation | Via layout techniques for improved low current measurements |
CN105144481A (zh) * | 2014-03-03 | 2015-12-09 | 株式会社藤仓 | 天线模块及其安装方法 |
WO2015136629A1 (ja) * | 2014-03-11 | 2015-09-17 | 三菱電機株式会社 | 高周波パッケージ |
US9652649B2 (en) * | 2014-07-02 | 2017-05-16 | Auden Techno Corp. | Chip-type antenna device and chip structure |
JP6385740B2 (ja) | 2014-07-04 | 2018-09-05 | ルネサスエレクトロニクス株式会社 | 電子装置およびその製造方法 |
JP6364315B2 (ja) | 2014-07-04 | 2018-07-25 | ルネサスエレクトロニクス株式会社 | 電子装置 |
WO2016006676A1 (ja) * | 2014-07-10 | 2016-01-14 | 株式会社村田製作所 | 高周波モジュール |
JP2016036124A (ja) * | 2014-08-05 | 2016-03-17 | 新日本無線株式会社 | 導波管−マイクロストリップ線路変換器 |
DE102014218339A1 (de) * | 2014-09-12 | 2016-03-17 | Robert Bosch Gmbh | Einrichtung zur Übertragung von Millimeterwellensignalen |
KR20160098016A (ko) | 2015-02-09 | 2016-08-18 | 한국전자통신연구원 | 미세 임피던스 변화량 감지를 위한 마이크로스트립, 슬롯 센서 장치 |
US9691694B2 (en) * | 2015-02-18 | 2017-06-27 | Qualcomm Incorporated | Substrate comprising stacks of interconnects, interconnect on solder resist layer and interconnect on side portion of substrate |
KR101551145B1 (ko) | 2015-02-26 | 2015-09-07 | 삼성전기주식회사 | 통신 패키지 모듈 |
US9443810B1 (en) | 2015-09-14 | 2016-09-13 | Qualcomm Incorporated | Flip-chip employing integrated cavity filter, and related components, systems, and methods |
US10033076B2 (en) * | 2016-01-07 | 2018-07-24 | Raytheon Company | Stacked filters |
WO2017138121A1 (ja) * | 2016-02-10 | 2017-08-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2018065059A1 (en) * | 2016-10-06 | 2018-04-12 | Telefonaktiebolaget Lm Ericsson (Publ) | A waveguide feed |
US10782388B2 (en) * | 2017-02-16 | 2020-09-22 | Magna Electronics Inc. | Vehicle radar system with copper PCB |
KR102639101B1 (ko) * | 2017-02-24 | 2024-02-22 | 에스케이하이닉스 주식회사 | 전자기간섭 차폐 구조를 갖는 반도체 패키지 |
EP3370487A1 (en) * | 2017-03-02 | 2018-09-05 | Nxp B.V. | Packaged rf circuits and radio unit |
JP6311822B2 (ja) * | 2017-04-25 | 2018-04-18 | 三菱電機株式会社 | 高周波モジュール |
JP2019016716A (ja) * | 2017-07-07 | 2019-01-31 | 国立大学法人 鹿児島大学 | 積層基板及び金属ボールの実装方法 |
US10867938B2 (en) * | 2017-09-25 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure |
KR102540353B1 (ko) * | 2017-09-29 | 2023-06-07 | 삼성전자주식회사 | 인쇄 회로 기판 및 상기 인쇄 회로 기판을 포함하는 장치 |
KR102362243B1 (ko) * | 2017-10-18 | 2022-02-11 | 삼성전자주식회사 | Rf 패키지 모듈 및 rf 패키지 모듈을 포함하는 전자 장치 |
DE102017223689A1 (de) * | 2017-12-22 | 2019-06-27 | Infineon Technologies Ag | Halbleitervorrichtungen mit Hochfrequenzleitungselementen und zugehörige Herstellungsverfahren |
JP7076347B2 (ja) * | 2018-09-18 | 2022-05-27 | 日本特殊陶業株式会社 | 導波管 |
EP3860325A4 (en) * | 2018-09-28 | 2022-06-22 | Sony Interactive Entertainment Inc. | ELECTRONIC DEVICE |
DE102019200902A1 (de) | 2019-01-24 | 2020-07-30 | Audi Ag | Radarsensor, Kraftfahrzeug und Verfahren zum Herstellen eines Radarsensors |
US20200243484A1 (en) * | 2019-01-30 | 2020-07-30 | Avago Technologies International Sales Pte. Limited | Radio frequency (rf) switch device including rf switch integrated circuit (ic) divided between sides of pcb |
DE102019102784A1 (de) * | 2019-02-05 | 2020-08-06 | Infineon Technologies Ag | Halbleitervorrichtungen mit Radar-Halbleiterchip und zugehörige Herstellungsverfahren |
US11128023B2 (en) * | 2019-02-22 | 2021-09-21 | Texas Instruments Incorporated | Substrate design for efficient coupling between a package and a dielectric waveguide |
CN111613862B (zh) * | 2019-02-22 | 2023-01-10 | 德克萨斯仪器股份有限公司 | 基板和通信系统 |
KR102031203B1 (ko) * | 2019-03-20 | 2019-10-11 | 동우 화인켐 주식회사 | 안테나 적층체 및 이를 포함하는 화상 표시 장치 |
US11605603B2 (en) | 2019-03-22 | 2023-03-14 | Intel Corporation | Microelectronic package with radio frequency (RF) chiplet |
US11527808B2 (en) * | 2019-04-29 | 2022-12-13 | Aptiv Technologies Limited | Waveguide launcher |
US11196146B2 (en) * | 2019-05-14 | 2021-12-07 | Texas Instruments Incorporated | Grounded BGA wave-guiding interface between an on-package signal launch and an external waveguide |
EP3979308A4 (en) | 2019-05-31 | 2023-08-16 | Kyocera Corporation | PRINTED CARD AND METHOD OF MAKING A PRINTED CARD |
JPWO2021029194A1 (ja) * | 2019-08-09 | 2021-02-18 | ||
WO2021054197A1 (ja) * | 2019-09-19 | 2021-03-25 | 積水化学工業株式会社 | 接着剤及びアンテナ装置 |
WO2021054196A1 (ja) * | 2019-09-19 | 2021-03-25 | 積水化学工業株式会社 | 接着剤及びアンテナ装置 |
JPWO2021054195A1 (ja) * | 2019-09-19 | 2021-03-25 | ||
WO2021054194A1 (ja) * | 2019-09-19 | 2021-03-25 | 積水化学工業株式会社 | 接着剤及びアンテナ装置 |
WO2021094506A1 (en) * | 2019-11-14 | 2021-05-20 | Uhland Goebel | Microwave system and apparatus |
DE102020101293A1 (de) | 2020-01-21 | 2021-07-22 | Infineon Technologies Ag | Hochfrequenz-vorrichtung mit halbleitervorrichtung und wellenleiter-bauteil |
CN114158256A (zh) * | 2020-06-17 | 2022-03-08 | 株式会社藤仓 | 无线模块 |
US11212912B1 (en) * | 2020-06-30 | 2021-12-28 | Microsoft Technology Licensing, Llc | Printed circuit board mesh routing to reduce solder ball joint failure during reflow |
CN112131817B (zh) * | 2020-09-28 | 2023-10-31 | 北京国联万众半导体科技有限公司 | 毫米波单片一体化设计方法 |
US20220406737A1 (en) * | 2021-06-16 | 2022-12-22 | Intel Corporation | Die to die high-speed communication without discrete amplifiers between a mixer and transmission line |
US11869858B2 (en) * | 2022-01-05 | 2024-01-09 | Marki Microwave, Inc. | Packaging high-frequency microwave circuits using hot via die attach with interposer |
US20240022001A1 (en) * | 2022-07-15 | 2024-01-18 | Aptiv Technologies Limited | Solderable Waveguide Antenna |
WO2024023870A1 (ja) * | 2022-07-25 | 2024-02-01 | 三菱電機株式会社 | 導波管-マイクロストリップ線路変換器、アンテナ装置、及びレーダ装置 |
US20240121897A1 (en) * | 2022-10-05 | 2024-04-11 | Nxp B.V. | Vertical launcher for a printed circuit board |
WO2024084556A1 (ja) * | 2022-10-18 | 2024-04-25 | 三菱電機株式会社 | 高周波半導体パッケージ |
CN115692350B (zh) * | 2023-01-03 | 2023-03-21 | 成都天成电科科技有限公司 | 一种抑制高次模的芯片封装结构 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2674417B2 (ja) | 1992-04-01 | 1997-11-12 | 日本電気株式会社 | 超高周波用パッケージ |
JPH08250913A (ja) | 1995-03-15 | 1996-09-27 | Honda Motor Co Ltd | Mmicパッケージ組立 |
JPH08330696A (ja) * | 1995-05-26 | 1996-12-13 | Japan Radio Co Ltd | 高放熱効果のコプレーナ型mmic回路 |
JPH10308478A (ja) * | 1997-03-05 | 1998-11-17 | Toshiba Corp | 半導体モジュール |
US6130483A (en) | 1997-03-05 | 2000-10-10 | Kabushiki Kaisha Toshiba | MMIC module using flip-chip mounting |
JP3462062B2 (ja) * | 1997-12-22 | 2003-11-05 | 京セラ株式会社 | 高周波用伝送線路の接続構造および配線基板 |
TW473882B (en) * | 1998-07-06 | 2002-01-21 | Hitachi Ltd | Semiconductor device |
US6297551B1 (en) | 1999-09-22 | 2001-10-02 | Agere Systems Guardian Corp. | Integrated circuit packages with improved EMI characteristics |
JP3617633B2 (ja) | 2000-10-06 | 2005-02-09 | 三菱電機株式会社 | 導波管接続部 |
JP4008004B2 (ja) * | 2000-10-06 | 2007-11-14 | 三菱電機株式会社 | 導波管接続部 |
JP2002164465A (ja) * | 2000-11-28 | 2002-06-07 | Kyocera Corp | 配線基板、配線ボード、それらの実装構造、ならびにマルチチップモジュール |
US6754407B2 (en) * | 2001-06-26 | 2004-06-22 | Intel Corporation | Flip-chip package integrating optical and electrical devices and coupling to a waveguide on a board |
US7276987B2 (en) | 2002-10-29 | 2007-10-02 | Kyocera Corporation | High frequency line-to-waveguide converter and high frequency package |
JP3969321B2 (ja) | 2003-02-20 | 2007-09-05 | 三菱電機株式会社 | 高周波送受信モジュール |
DE602004027622D1 (de) | 2003-05-26 | 2010-07-22 | Omron Tateisi Electronics Co | Informationsträger, informationsaufzeichnungsmedium, sensor, güterverwaltungsverfahren |
EP1729340B1 (en) | 2004-03-26 | 2017-09-06 | Mitsubishi Denki Kabushiki Kaisha | High frequency package, transmitting and receiving module and wireless equipment |
JP4634836B2 (ja) * | 2004-03-26 | 2011-02-16 | 三菱電機株式会社 | 高周波パッケージ、送受信モジュールおよび無線装置 |
JP4448461B2 (ja) * | 2005-02-18 | 2010-04-07 | 富士通株式会社 | 半導体パッケージの作製方法 |
US20060226928A1 (en) * | 2005-04-08 | 2006-10-12 | Henning Larry C | Ball coax interconnect |
US7405477B1 (en) | 2005-12-01 | 2008-07-29 | Altera Corporation | Ball grid array package-to-board interconnect co-design apparatus |
JP2006287962A (ja) * | 2006-05-19 | 2006-10-19 | Mitsubishi Electric Corp | 高周波送受信モジュール |
EP2178151B1 (en) * | 2007-08-02 | 2015-03-04 | Mitsubishi Electric Corporation | Waveguide connection structure |
EP2333828B1 (en) * | 2008-09-05 | 2019-11-20 | Mitsubishi Electric Corporation | High-frequency circuit package, and sensor module |
JP2011151367A (ja) * | 2009-12-25 | 2011-08-04 | Sony Corp | 回路基板積層モジュール及び電子機器 |
US9693492B2 (en) | 2011-04-14 | 2017-06-27 | Mitsubishi Electric Corporation | High-frequency package |
-
2009
- 2009-09-02 EP EP09811515.7A patent/EP2333828B1/en active Active
- 2009-09-02 WO PCT/JP2009/065345 patent/WO2010026990A1/ja active Application Filing
- 2009-09-02 US US13/062,349 patent/US9070961B2/en active Active
- 2009-09-02 EP EP19197339.5A patent/EP3598484B1/en active Active
- 2009-09-02 CN CN200980135948.5A patent/CN102144289B/zh active Active
- 2009-09-02 JP JP2010527796A patent/JP5371997B2/ja active Active
-
2011
- 2011-03-24 JP JP2011065740A patent/JP5517982B2/ja active Active
- 2011-03-30 US US13/075,779 patent/US9433080B2/en active Active
-
2013
- 2013-02-22 JP JP2013033467A patent/JP5519815B2/ja active Active
-
2014
- 2014-04-03 JP JP2014077118A patent/JP5775194B2/ja active Active
-
2015
- 2015-05-22 US US14/720,229 patent/US9648725B2/en active Active
- 2015-07-02 JP JP2015133661A patent/JP5960886B2/ja not_active Expired - Fee Related
-
2016
- 2016-06-23 JP JP2016124203A patent/JP6180592B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2016197882A (ja) | 2016-11-24 |
US20110163919A1 (en) | 2011-07-07 |
EP3598484B1 (en) | 2021-05-05 |
JP5775194B2 (ja) | 2015-09-09 |
EP2333828A1 (en) | 2011-06-15 |
US9433080B2 (en) | 2016-08-30 |
US9070961B2 (en) | 2015-06-30 |
JP2011155287A (ja) | 2011-08-11 |
JP5519815B2 (ja) | 2014-06-11 |
EP2333828B1 (en) | 2019-11-20 |
CN102144289B (zh) | 2015-08-05 |
EP3598484A1 (en) | 2020-01-22 |
CN102144289A (zh) | 2011-08-03 |
JP2013165273A (ja) | 2013-08-22 |
US20110175793A1 (en) | 2011-07-21 |
WO2010026990A1 (ja) | 2010-03-11 |
JP2014187369A (ja) | 2014-10-02 |
EP2333828A4 (en) | 2012-07-18 |
JP2015167422A (ja) | 2015-09-24 |
JP6180592B2 (ja) | 2017-08-16 |
US20150257254A1 (en) | 2015-09-10 |
JP5371997B2 (ja) | 2013-12-18 |
JP5960886B2 (ja) | 2016-08-02 |
JP5517982B2 (ja) | 2014-06-11 |
US9648725B2 (en) | 2017-05-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6180592B2 (ja) | 高周波回路パッケージおよびセンサモジュール | |
EP2463952B1 (en) | Transmission line substrate and semiconductor package | |
JP3734807B2 (ja) | 電子部品モジュール | |
JP4634836B2 (ja) | 高周波パッケージ、送受信モジュールおよび無線装置 | |
US20050122255A1 (en) | Rf system concept for vehicular radar having several beams | |
JP4634837B2 (ja) | 高周波パッケージ、送受信モジュールおよび無線装置 | |
JP4516101B2 (ja) | 伝送線路基板および半導体パッケージ | |
US6914787B2 (en) | Electronic component module | |
WO2022126754A1 (zh) | 芯片封装结构、芯片封装方法及电子设备 | |
JP3556470B2 (ja) | 高周波用モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130702 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130726 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130820 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130917 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5371997 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |