JP5517982B2 - 高周波回路パッケージおよびセンサモジュール - Google Patents
高周波回路パッケージおよびセンサモジュール Download PDFInfo
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- JP5517982B2 JP5517982B2 JP2011065740A JP2011065740A JP5517982B2 JP 5517982 B2 JP5517982 B2 JP 5517982B2 JP 2011065740 A JP2011065740 A JP 2011065740A JP 2011065740 A JP2011065740 A JP 2011065740A JP 5517982 B2 JP5517982 B2 JP 5517982B2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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Description
1)高周波半導体チップ22と制御アンテナ基板1に搭載された制御回路とのDCバイアス、信号接続のためのインタフェース
2)制御アンテナ基板1に形成されたトリプレート線路6との高周波信号(LOCAL信号)の接続
3)個別回路(ミキサ、電力分配器など)の動作安定のためのキャビティ形成
4)複数のチャネル間の空間アイソレーションの確保
5)受信回路全体の電磁シールド(蓋体の代わり)
6)不要波の漏洩防止
2 樹脂アンテナ基板
3 マザー制御基板
4 送信導波管
5 受信導波管
6 トリプレート線路
10 BGAボール
20 高周波回路搭載基板(高周波樹脂基板)
21 高周波回路
22 高周波半導体チップ
30 BGAボール
30G、30G1、30G2、30G3 BGAボール(接地接続)
30S、30S1、30S2 BGAボール(信号用)
40、43 信号ビア
41 導体パッド
42 信号線路
50 導波管−マイクロストリップ変換器
51 BGA導波管
52 導波管開口
53 バックショート
54 先端開放プローブ
55 誘電体が露出された部分
60 誘電体
65 導体ランド(接地接続)
66 導体ランド(信号接続)
70 マイクロストリップ線路
75 電力分配器
76 チップ抵抗器
80 ミキサ
81 APDP
90 高周波回路搭載基板
91 送信系の高周波回路
92 送信用の高周波半導体チップ
100 Auバンプ
GB 接地導体ビア
GP 接地導体パターン
RX 受信回路パッケージ
TX 送信回路パッケージ
Claims (6)
- 複数の高周波回路が裏面表層に設けられ、前記高周波回路を囲むように第1の接地導体が前記高周波回路の実装面である裏面表層に形成される第1の樹脂基板と、
前記高周波回路を挟むように前記第1の樹脂基板を搭載し、前記高周波回路に対向する部位に第2の接地導体が形成される第2の樹脂基板と、
を備え、
前記第1の樹脂基板の第1の接地導体上に前記複数の高周波回路をそれぞれ別個に囲むように、高周波信号の自由空間伝搬波長の1/4以下の間隔で配列された複数の第1のランドを形成し、前記第2の樹脂基板の表層の前記複数の第1のランドに対向する位置に前記第2の接地導体に電気的に接続される複数の第2のランドを設け、
第1のランドおよび第2のランド間を接続する複数の導電性接続部材を備え、
前記第2の接地導体が形成される第2の樹脂基板の表層と、前記第2のランドが設けられる前記第2の樹脂基板の表層とは同一面であり、
前記複数の高周波回路を各々、前記複数の導電性接続部材と第1および第2の接地導体とによって別個に区画された擬似遮蔽キャビティ内に収納したことを特徴とする高周波回路パッケージ。 - 前記第1の樹脂基板は、
前記複数の高周波回路にそれぞれ接続され、裏面表層に形成された複数のマイクロストリップ線路と、
前記複数のマイクロストリップ線路の各々の先端開放部が前記第1の接地導体に囲まれて形成された複数の導波管開口と、
を備え、
前記第2の樹脂基板は、
前記複数の導波管開口部にそれぞれ対向する位置に基板積層方向に形成された複数の導波管、
を備え、
前記第1および第2の接地導体に、各々互いに対向する位置に、前記各導波管開口および前記各導波管をそれぞれ囲むように、高周波信号の自由空間伝搬波長の1/4以下の間隔で配列された複数の導波管用導体ランドを、導電性接続部材によって相互に接続することを特徴とする請求項1に記載の高周波回路パッケージ。 - 前記高周波回路は、前記第1の誘電体基板と前記第2の誘電体基板の間で非気密に収容されたことを特徴とする請求項1に記載の高周波回路パッケージ。
- 前記複数の導波管開口から基板積層方向に高周波信号の基板内実効伝搬波長の略1/4の長さを有する複数の先端短絡誘電体導波管を備えた請求項2に記載の高周波回路パッケージ。
- 前記高周波回路は、高周波半導体チップを有したことを特徴とする請求項1から請求項4のいずれか一つに記載の高周波回路パッケージ。
- 前記請求項2または請求項4に記載の第1、第2の樹脂基板と、
前記第2の樹脂基板における第1の樹脂基板を搭載する面の裏面に、前記第2の樹脂基板に形成された導波管に接続されるアンテナとを備えたことを特徴とするセンサモジュール。
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US9648725B2 (en) | 2017-05-09 |
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