JPWO2008078478A1 - 導電性バンプとその形成方法および半導体装置とその製造方法 - Google Patents
導電性バンプとその形成方法および半導体装置とその製造方法 Download PDFInfo
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- JPWO2008078478A1 JPWO2008078478A1 JP2008550997A JP2008550997A JPWO2008078478A1 JP WO2008078478 A1 JPWO2008078478 A1 JP WO2008078478A1 JP 2008550997 A JP2008550997 A JP 2008550997A JP 2008550997 A JP2008550997 A JP 2008550997A JP WO2008078478 A1 JPWO2008078478 A1 JP WO2008078478A1
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- Prior art keywords
- conductive
- cured
- conductive bump
- electrode terminal
- circuit board
- Prior art date
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Abstract
Description
12,32,42 半導体ウェハー(電子部品)
13,43 開口部
14,44 印刷マスク
15,45 導電性ペースト
16,46 スキージ
17,37,47,57 導電性バンプ
17a,37a,47a,57a 第1硬化部
17b,37b,47b,57b 第2硬化部
17c,47c 導電性バンプ前駆体
18,48 液晶マスク(露光マスク)
19,49 光透過部
52 半導体素子
60 回路基板
62 封止樹脂
図1Aは、本発明の実施の形態1における導電性バンプの構造を概念的に説明する斜視図で、図1Bは図1Aの1B−1B線断面図である。なお、図1Aと図1Bにおいては、導電性バンプを形成する電子部品は省略している。
以下に、本発明の実施の形態2における導電性バンプの構造について図4A〜図4Cを用いて説明する。
以下に、本発明の実施の形態3における導電性バンプの形成方法について、図5A〜図5Eを用いて説明する。図5A〜図5Eは、本発明の実施の形態3における導電性バンプを形成方法を説明する断面図である。なお、実施の形態1の場合と同様に、導電性バンプを形成する電子部品として多数の半導体素子が形成された半導体ウェハーを用いた例で説明する。また、露光マスクとして、液晶マスクを用いた例で説明するが、金属マスクなどでもよい。
以下に、本発明の実施の形態4における半導体装置の製造方法について、図6A〜図6Cを用いて説明する。図6A〜図6Cは、本発明の実施の形態4における半導体装置の製造方法を説明する断面図である。なお、半導体装置は、上記各実施の形態で形成した導電性バンプを備える半導体素子を回路基板上にフリップチップ実装した構成を有するものである。
図1Aは、本発明の実施の形態1における導電性バンプの構造を概念的に説明する斜視図で、図1Bは図1Aの1B−1B線断面図である。なお、図1Aと図1Bにおいては、導電性バンプを形成する電子部品は省略している。
以下に、本発明の実施の形態2における導電性バンプの構造について図4A〜図4Cを用いて説明する。
以下に、本発明の実施の形態3における導電性バンプの形成方法について、図5A〜図5Eを用いて説明する。図5A〜図5Eは、本発明の実施の形態3における導電性バンプを形成方法を説明する断面図である。なお、実施の形態1の場合と同様に、導電性バンプを形成する電子部品として多数の半導体素子が形成された半導体ウェハーを用いた例で説明する。また、露光マスクとして、液晶マスクを用いた例で説明するが、金属マスクなどでもよい。
以下に、本発明の実施の形態4における半導体装置の製造方法について、図6A〜図6Cを用いて説明する。図6A〜図6Cは、本発明の実施の形態4における半導体装置の製造方法を説明する断面図である。なお、半導体装置は、上記各実施の形態で形成した導電性バンプを備える半導体素子を回路基板上にフリップチップ実装した構成を有するものである。
12,32,42 半導体ウェハー(電子部品)
13,43 開口部
14,44 印刷マスク
15,45 導電性ペースト
16,46 スキージ
17,37,47,57 導電性バンプ
17a,37a,47a,57a 第1硬化部
17b,37b,47b,57b 第2硬化部
17c,47c 導電性バンプ前駆体
18,48 液晶マスク(露光マスク)
19,49 光透過部
52 半導体素子
60 回路基板
62 封止樹脂
Claims (12)
- 電子部品の電極端子面に形成される導電性バンプであって、
前記導電性バンプは、少なくとも導電性フィラーの密度が異なる複数の樹脂硬化物で構成されていることを特徴とする導電性バンプ。 - 前記電子部品が、半導体素子または回路基板であることを特徴とする請求項1に記載の導電性バンプ。
- 前記導電性バンプは、少なくとも中心部に形成された前記樹脂硬化物の前記導電性フィラーの密度が、外周部に形成された前記樹脂硬化物の前記導電性フィラーの密度より小さいことを特徴とする請求項1に記載の導電性バンプ。
- 前記導電性バンプは、少なくとも中心部に形成された前記樹脂硬化物の前記導電性フィラーの密度が、外周部に形成された前記樹脂硬化物の前記導電性フィラーの密度より大きいことを特徴とする請求項1に記載の導電性バンプ。
- 前記導電性フィラーを含む前記複数の樹脂硬化物は、少なくとも光硬化法と熱硬化法により硬化される第1硬化部および前記熱硬化法により硬化される第2硬化部とにより構成されていることを特徴とする請求項1に記載の導電性バンプ。
- 前記導電性バンプの前記樹脂硬化物の樹脂成分として、少なくとも光硬化樹脂成分および熱硬化樹脂成分を含んでいることを特徴とする請求項1に記載の導電性バンプ。
- 電子部品の電極端子上に印刷マスクの開口部を位置合わせし、前記開口部を介して導電性ペーストを前記電極端子上に塗布するステップと、
前記印刷マスクを取り外したのち、露光マスクを介して前記電極端子上の導電性ペーストの一部に、紫外光または可視光を照射し、前記導電性ペーストの一部を硬化させて第1硬化部を形成するステップと、
前記電子部品を加熱し、前記第1硬化部以外の部分に第2硬化部を形成するステップと、
を含むことを特徴とする導電性バンプの形成方法。 - 電子部品の電極端子上に印刷マスクの開口部を位置合わせし、前記開口部を介して導電性ペーストを前記電極端子上に印刷するステップと、
前記印刷マスクの上面に露光マスクを配置し、印刷された前記導電性ペーストの一部に前記露光マスクを介して紫外光または可視光を照射し、前記導電性ペーストの一部を硬化させて第1硬化部を形成するステップと、
前記電子部品を加熱し、前記第1硬化部以外の部分に第2硬化部を形成するステップと、
前記露光マスクおよび印刷マスクを取り外すステップと、
を含むことを特徴とする導電性バンプの形成方法。 - 前記露光マスクが液晶マスクであることを特徴とする請求項7または請求項8のいずれか1項に記載の導電性バンプの形成方法。
- 前記導電性ペーストが、光硬化樹脂および熱硬化樹脂を含んでいることを特徴とする請求項7または請求項8のいずれか1項に記載の導電性バンプの形成方法。
- 請求項1に記載の導電性バンプを用いて、回路基板の電極端子と半導体素子の電極端子とを電気的に接続したことを特徴とする半導体装置。
- 請求項7または請求項8のいずれか1項に記載の導電性バンプの形成方法によって導電性バンプが形成された半導体ウェハーを個々の半導体素子に切断するステップと、
前記半導体素子を反転させ、回路基板上の電極端子上に前記導電性バンプを位置合わせして実装するステップと、
前記半導体素子と前記回路基板とを加圧、加熱することにより、少なくとも前記導電性バンプの第2硬化部を硬化させて前記半導体素子と前記回路基板とを接合するステップと、
前記半導体素子と前記回路基板との間隙に封止樹脂を注入し、硬化させるステップと、
を含むことを特徴とする半導体装置の製造方法。
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- 2007-11-20 KR KR1020097009613A patent/KR101155709B1/ko not_active IP Right Cessation
- 2007-11-20 US US12/514,649 patent/US7928566B2/en not_active Expired - Fee Related
- 2007-11-20 JP JP2008550997A patent/JP5003689B2/ja not_active Expired - Fee Related
- 2007-11-20 WO PCT/JP2007/072423 patent/WO2008078478A1/ja active Application Filing
- 2007-11-20 CN CN2007800424492A patent/CN101578694B/zh not_active Expired - Fee Related
- 2007-11-28 TW TW96145169A patent/TWI469232B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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CN101578694A (zh) | 2009-11-11 |
TW200834771A (en) | 2008-08-16 |
CN101578694B (zh) | 2011-07-13 |
US7928566B2 (en) | 2011-04-19 |
US20100029044A1 (en) | 2010-02-04 |
WO2008078478A1 (ja) | 2008-07-03 |
TWI469232B (zh) | 2015-01-11 |
JP5003689B2 (ja) | 2012-08-15 |
KR20090067202A (ko) | 2009-06-24 |
KR101155709B1 (ko) | 2012-06-12 |
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