JP2011114259A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP2011114259A JP2011114259A JP2009271258A JP2009271258A JP2011114259A JP 2011114259 A JP2011114259 A JP 2011114259A JP 2009271258 A JP2009271258 A JP 2009271258A JP 2009271258 A JP2009271258 A JP 2009271258A JP 2011114259 A JP2011114259 A JP 2011114259A
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- Prior art keywords
- semiconductor device
- wiring board
- metal
- electronic component
- conductive paste
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- 229910001111 Fine metal Inorganic materials 0.000 description 1
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Abstract
【解決手段】積層された上層側配線基板20および下層側配線基板10の電気的接続に金属ペーストを使用することで、Cuコア入り半田ボールを使用した接続方法に比べ接続ピッチL4を小さくし、低温での接続を実現する。また、金属ペーストを印刷塗布もしくはディスペンス塗布することで、製造工程を簡略化し、製造コストを低減する。
【選択図】図1
Description
少なくとも2枚の配線基板間に電子部品が搭載され、前記2枚の配線基板の内の少なくとも1枚の前記配線基板と前記電子部品とが電気的に接続されており、前記2枚の配線基板同士が電気的に接続され、かつ、前記電子部品を含む前記2枚の配線基板間が樹脂封止され、前記2枚の配線基板同士の電気的接続に導電性材料が用いられている半導体装置である。
2 高周波パワーアンプチップ
3 フリップチップバンプ
4 アンテナスイッチ
5 フィルタ
6 有機金属柱
6a 有機金属ペースト
7 印刷マスク
8 開口部
9 空間
10 下層側配線基板
11 金型
12 ボンディングパッド
13 マイコンチップ
14 バンプ
15 メモリチップ
16 回路部品
20 上層側配線基板
30 電子部品(半導体素子)
32 電極
40 半田ボール
42 Cuコア
44 半田
45 封止樹脂
46 ボンディングワイヤ
47 樹脂
48 電子部品内蔵基板
L1 直径
L2、L4 接続ピッチ
L3 高さ
Claims (20)
- 少なくとも2枚の配線基板間に電子部品が搭載され、前記2枚の配線基板の内の少なくとも1枚の前記配線基板と前記電子部品とが電気的に接続されており、前記2枚の配線基板同士が電気的に接続され、かつ、前記電子部品を含む前記2枚の配線基板間が樹脂封止され、前記2枚の配線基板同士の電気的接続に導電性材料が用いられている半導体装置であって、
前記導電性材料は複数の金属粒子を含み、前記複数の金属粒子のそれぞれの表面同士が部分的に溶着していることを特徴とする半導体装置。 - 少なくとも2枚の前記配線基板のそれぞれに電子部品が搭載されていることを特徴とする請求項1記載の半導体装置。
- 前記金属粒子は、少なくともAgまたはCuのいずれかの粒子を含むことを特徴とする請求項1記載の半導体装置。
- 前記導電性材料は、前記金属粒子よりも直径の大きい金属粉からなる骨材を含むものであることを特徴とする請求項1記載の半導体装置。
- 前記金属粉は、少なくともAgまたはCuのいずれかを含むことを特徴とする請求項4記載の半導体装置。
- 前記導電性材料は、柱状の形状を有していることを特徴とする請求項1記載の半導体装置。
- 前記導電性材料はその側面にテーパが設けられ、上面の面積よりも下面の面積の方が広く形成されていることを特徴とする請求項6記載の半導体装置。
- 前記導電性材料は、直径が10nmより小さい前記金属粒子を含むことを特徴とする請求項1記載の半導体装置。
- 少なくとも2枚の配線基板間に電子部品が搭載され、前記2枚の配線基板の内の少なくとも1枚の前記配線基板と前記電子部品とが電気的に接続されており、前記2枚の配線基板同士が電気的に接続され、かつ、前記電子部品を含む前記2枚の配線基板間が樹脂封止され、前記2枚の配線基板同士の電気的接続に導電性材料が用いられている半導体装置であって、
前記導電性材料は、導電性ペーストが硬化したものであることを特徴とする半導体装置。 - 少なくとも2枚の前記配線基板のそれぞれに電子部品が搭載されていることを特徴とする請求項9記載の半導体装置。
- 前記導電性材料は、柱状の形状を有していることを特徴とする請求項9記載の半導体装置。
- 前記導電性材料はその側面にテーパが設けられ、上面の面積よりも下面の面積の方が広く形成されていることを特徴とする請求項11記載の半導体装置。
- 前記導電性ペーストは、複数のAg粒子、Cu粒子またはAu粒子にフェノール樹脂またはポリエステル樹脂を混合したものであることを特徴とする請求項9記載の半導体装置。
- それぞれの表面に電子部品を搭載した複数の配線基板を積層し、上下に積層された前記複数の配線基板同士を電気的に接続した半導体装置の製造方法であって、
(a)第1電子部品を搭載した第1配線基板を用意する工程と、
(b)前記(a)工程の後、前記第1配線基板上に導電性ペーストを配置する工程と、
(c)前記(b)工程の後、前記第1配線基板上に前記導電性ペーストを介して第2電子部品を搭載した第2配線基板を搭載する工程と、
(d)前記(c)工程の後、前記導電性ペーストを硬化させ、前記導電性ペーストからなる金属柱を形成し、前記金属柱を介して前記第1配線基板および前記第2配線基板を電気的に接続する工程と、
(e)前記(d)工程の後、前記第1配線基板と前記第2配線基板との間を樹脂封止する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記(b)工程では、開口部を有する印刷マスクを前記第1配線基板上に載せ、前記開口部内に導電性ペーストを充填した後、前記印刷マスクを前記第1配線基板上から取り外すことにより、前記第1配線基板上に導電性ペーストを配置することを特徴とする請求項14記載の半導体装置の製造方法。
- 前記(d)工程では、前記第1配線基板および前記第2配線基板の間に形成された前記導電性ペーストを加熱することで、前記導電性ペーストを硬化させ、前記導電性ペーストからなる前記金属柱を形成し、前記金属柱を介して前記第1配線基板および前記第2配線基板を電気的に接続することを特徴とする請求項14記載の半導体装置の製造方法。
- 前記導電性ペーストは、金属粒子、分散材および分散補足材を有することを特徴とする請求項16記載の半導体装置の製造方法。
- 前記金属粒子は、直径が10nm以下であることを特徴とする請求項17記載の半導体装置の製造方法。
- 前記導電性ペーストは複数の金属粒子を含み、
前記(d)工程では、前記複数の金属粒子のそれぞれの表面同士が部分的に溶着することを特徴とする請求項14記載の半導体装置の製造方法。 - 前記導電性ペーストは、Ag、CuまたはAuを含むことを特徴とする請求項14記載の半導体装置の製造方法。
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US20110128713A1 (en) | 2011-06-02 |
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