JPWO2006101171A1 - 真空部品の製造方法、樹脂被膜形成装置及び真空成膜システム - Google Patents
真空部品の製造方法、樹脂被膜形成装置及び真空成膜システム Download PDFInfo
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- 229920005989 resin Polymers 0.000 title claims abstract description 78
- 239000011347 resin Substances 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000178 monomer Substances 0.000 claims abstract description 82
- 239000002994 raw material Substances 0.000 claims description 61
- 229920002396 Polyurea Polymers 0.000 claims description 48
- 239000006200 vaporizer Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- 238000001704 evaporation Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 229920001721 polyimide Polymers 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 8
- 238000006116 polymerization reaction Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 5
- 150000004985 diamines Chemical class 0.000 claims 1
- 125000005442 diisocyanate group Chemical group 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000007246 mechanism Effects 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 136
- 239000007789 gas Substances 0.000 description 78
- 238000006243 chemical reaction Methods 0.000 description 19
- 239000007788 liquid Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 10
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000012159 carrier gas Substances 0.000 description 8
- 229920003002 synthetic resin Polymers 0.000 description 7
- 239000000057 synthetic resin Substances 0.000 description 7
- 230000032258 transport Effects 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 125000002524 organometallic group Chemical group 0.000 description 6
- 230000008016 vaporization Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000003405 preventing effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- KOFZWWMCDUHEEM-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound [CH2]N1CCCC1 KOFZWWMCDUHEEM-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910000086 alane Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 238000006358 imidation reaction Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- -1 spraying Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/22—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to internal surfaces, e.g. of tubes
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Abstract
Description
17 原料ガス供給配管
21 樹脂被膜形成装置
22A,22B 真空部品
23 供給部
24 真空排気ライン
24c 接続部
25a,25b 蒸発源
26 混合槽
31 温度調整機構(部品温度調整部)
40 真空成膜システム
41 温度調整機構
図1は本発明の第1の実施の形態による樹脂被膜形成装置21の構成を示している。本実施の形態の樹脂被膜形成装置21は、真空部品(図1の例では真空バルブ)22Aの内部流路上に樹脂被膜を形成するためのものである。
続いて、図3は本発明の第2の実施の形態を示している。本実施の形態では、図5を参照して説明した従来のMOCVD装置に本発明に係る樹脂被膜形成装置21を組み込んだ真空成膜システム40について説明する。なお、図において図5と対応する部分については同一の符号を付する。
SUS316Lのベアサンプルでは、表面の結晶粒界に沿ってMPAの付着が見られた(図6参照)。
電解研磨処理したSUS316L−EPチップは、SUS316Lのベアサンプルに比べてMPAの付着量は低減できるものの、研磨処理した表面の傷に沿ってMPAの付着が確認された。
なお、TiN(2μm)をコーティング処理したサンプルについては、SUS316Lのベアサンプルよりもかなり多いMPAの付着が認められた。
Claims (17)
- 内部流路を有する真空部品の製造方法であって、
前記内部流路を真空排気ラインに接続した後、モノマー蒸気を前記真空排気ラインを介して前記内部流路へ供給し、この内部流路上に樹脂被膜を形成することを特徴とする真空部品の製造方法。 - 前記モノマー蒸気は、蒸着重合用の少なくとも2種のモノマー混合蒸気である請求の範囲第1項に記載の真空部品の製造方法。
- 前記樹脂被膜は、ジイソシアネートとジアミンとの重合反応によって形成されたポリ尿素膜である請求の範囲第1項に記載の真空部品の製造方法。
- 前記ポリ尿素膜の厚さは、100nm以上1000nm以下である請求の範囲第3項に記載の真空部品の製造方法。
- 前記真空部品は、配管、バルブ又は気化器である請求の範囲第1項に記載の真空部品の製造方法。
- 前記配管は、コイル形状である請求の範囲第5項に記載の真空部品の製造方法。
- 前記真空排気ラインに沿って複数の真空部品を接続し、これら複数の真空部品の内部流路上にそれぞれ前記樹脂被膜を一括的に形成する
ことを特徴とする請求の範囲第1項に記載の真空部品の製造方法。 - 前記内部流路上に既に形成されている樹脂被膜を分解除去する工程と、
前記内部流路に新しく樹脂被膜を形成する工程とを経て、
前記内部流路上の樹脂被膜を再生する請求の範囲第1項に記載の真空部品の製造方法。 - 真空部品の内部流路上に樹脂被膜を形成するための樹脂被膜形成装置であって、
モノマー蒸気の供給部と、
前記モノマー蒸気を輸送する真空排気ラインと、
前記真空排気ラインの一部に設けられ前記真空部品の内部流路と接続可能な接続部と、
前記接続部に接続された真空部品の内部流路上に前記モノマー蒸気を付着させて樹脂被膜を形成する部品温度調整部とを備えたことを特徴とする樹脂被膜形成装置。 - 前記供給部は、蒸着重合用の複数種の樹脂原料モノマーを蒸発させる複数の蒸発源と、これら複数種のモノマー蒸気を混合させる混合槽とを有する請求の範囲第9項に記載の樹脂被膜形成装置。
- 前記樹脂被膜は、ポリ尿素膜又はポリイミド膜である請求の範囲第9項に記載の樹脂被膜形成装置。
- 前記真空部品は、配管、バルブ又は気化器である請求の範囲第9項に記載の樹脂被膜形成装置
- 真空排気可能な成膜室と、この成膜室へ原料ガスを供給する原料ガス供給ラインと、この原料ガス供給ラインを構成する複数の真空部品の内部流路上に樹脂被膜を形成する樹脂被膜形成装置とを有し、
前記樹脂被膜形成装置は、
モノマー蒸気の供給部と、
前記供給部と前記原料ガス供給ラインとの間に接続され前記モノマー蒸気を輸送するモノマー蒸気輸送ラインと、
前記真空部品の内部流路上に前記モノマー蒸気を付着させて樹脂被膜を形成する部品温度調整部とを備えたことを特徴とする真空成膜システム。 - 前記供給部は、蒸着重合用の複数種の樹脂原料モノマーを蒸発させる複数の蒸発源と、これら複数種のモノマー蒸気を混合させる混合槽とを有する請求の範囲第13項に記載の真空成膜システム。
- 前記樹脂被膜は、ポリ尿素膜又はポリイミド膜である請求の範囲第13項に記載の真空成膜システム。
- 前記真空部品は、配管、バルブ又は気化器である請求の範囲第13項に記載の真空成膜システム。
- 前記原料ガスは、MOCVD用の有機金属材料の気化ガスである請求の範囲第13項に記載の真空成膜システム。
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PCT/JP2006/305832 WO2006101171A1 (ja) | 2005-03-24 | 2006-03-23 | 真空部品の製造方法、樹脂被膜形成装置及び真空成膜システム |
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US (1) | US8252113B2 (ja) |
JP (1) | JP4986845B2 (ja) |
KR (2) | KR101063788B1 (ja) |
CN (1) | CN101115860B (ja) |
TW (1) | TWI363102B (ja) |
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Families Citing this family (15)
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US8252113B2 (en) * | 2005-03-24 | 2012-08-28 | Ulvac, Inc. | Method for producing component for vacuum apparatus, resin coating forming apparatus and vacuum film forming system |
CN101631889B (zh) * | 2007-04-16 | 2011-12-28 | 株式会社爱发科 | 聚脲膜及其成膜方法 |
US7883745B2 (en) * | 2007-07-30 | 2011-02-08 | Micron Technology, Inc. | Chemical vaporizer for material deposition systems and associated methods |
US20110045182A1 (en) * | 2009-03-13 | 2011-02-24 | Tokyo Electron Limited | Substrate processing apparatus, trap device, control method for substrate processing apparatus, and control method for trap device |
JP5359642B2 (ja) * | 2009-07-22 | 2013-12-04 | 東京エレクトロン株式会社 | 成膜方法 |
DE102011103737A1 (de) * | 2011-05-31 | 2012-12-06 | Heinz Busch | Verfahren zum Beschichten von inneren Oberflächen langgestreckter Gegenstände |
JP5966618B2 (ja) * | 2012-05-28 | 2016-08-10 | 東京エレクトロン株式会社 | 成膜方法 |
JP5837869B2 (ja) * | 2012-12-06 | 2015-12-24 | 株式会社フジキン | 原料気化供給装置 |
CN105296932B (zh) * | 2015-10-30 | 2018-04-20 | 武汉华星光电技术有限公司 | 一种蒸镀机 |
JP6809315B2 (ja) * | 2017-03-15 | 2021-01-06 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び真空処理装置 |
JP6799550B2 (ja) * | 2018-01-16 | 2020-12-16 | 東京エレクトロン株式会社 | プラズマ処理装置の部品をクリーニングする方法 |
JP7093667B2 (ja) * | 2018-04-11 | 2022-06-30 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP7058545B2 (ja) * | 2018-04-25 | 2022-04-22 | 東京エレクトロン株式会社 | ガス供給管のクリーニング方法および処理システム |
US20200203127A1 (en) * | 2018-12-20 | 2020-06-25 | L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude | Systems and methods for storage and supply of f3no-free fno gases and f3no-free fno gas mixtures for semiconductor processes |
EP3786321A3 (de) * | 2019-08-27 | 2021-03-17 | Albert-Ludwigs-Universität Freiburg | Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat |
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DE3571772D1 (en) * | 1984-03-21 | 1989-08-31 | Ulvac Corp | Improvements in or relating to the covering of substrates with synthetic resin films |
US4663201A (en) * | 1986-04-25 | 1987-05-05 | Uop Inc. | Polyurea coatings for objects of metal glass wood or plastic |
JPH0668151B2 (ja) * | 1988-06-30 | 1994-08-31 | 日本真空技術株式会社 | 真空用部材内部の真空接触面処理方法 |
JPH0445259A (ja) * | 1990-06-11 | 1992-02-14 | Ulvac Japan Ltd | 成膜装置 |
JP3585633B2 (ja) * | 1996-03-19 | 2004-11-04 | 株式会社アルバック | 蒸着重合装置 |
JP3623848B2 (ja) * | 1996-04-05 | 2005-02-23 | 株式会社アルバック | 有機化合物用蒸発源及びこれを用いた蒸着重合装置 |
JP3582437B2 (ja) * | 1999-12-24 | 2004-10-27 | 株式会社村田製作所 | 薄膜製造方法及びそれに用いる薄膜製造装置 |
EP1174234A3 (de) * | 2000-07-18 | 2003-05-14 | Kalenborn Kalprotect - Dr. Mauritz GmbH & Co. KG | Verfahren und Vorrichtung zum Einbringen einer Beschichtung in Rohre |
JP2003013234A (ja) * | 2000-12-01 | 2003-01-15 | Japan Pionics Co Ltd | 気化器及び気化供給装置 |
EP1211333A3 (en) * | 2000-12-01 | 2003-07-30 | Japan Pionics Co., Ltd. | Vaporizer for CVD apparatus |
JP4421180B2 (ja) * | 2002-09-27 | 2010-02-24 | 株式会社アルバック | 表面処理方法及び真空容器類 |
JP4399517B2 (ja) * | 2004-01-05 | 2010-01-20 | 株式会社堀場製作所 | 成膜装置と成膜方法 |
US8252113B2 (en) * | 2005-03-24 | 2012-08-28 | Ulvac, Inc. | Method for producing component for vacuum apparatus, resin coating forming apparatus and vacuum film forming system |
US8790785B2 (en) * | 2006-07-21 | 2014-07-29 | Renesas Electronics Corporation | Method of forming a porous insulation film |
JP2008274365A (ja) * | 2007-05-01 | 2008-11-13 | Shin Etsu Chem Co Ltd | Si含有膜形成材料、Si含有膜及びその製造方法、並びに半導体デバイス |
-
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JP4986845B2 (ja) | 2012-07-25 |
KR100949298B1 (ko) | 2010-03-23 |
CN101115860A (zh) | 2008-01-30 |
KR20070101272A (ko) | 2007-10-16 |
US20090238968A1 (en) | 2009-09-24 |
TW200643195A (en) | 2006-12-16 |
WO2006101171A1 (ja) | 2006-09-28 |
US8252113B2 (en) | 2012-08-28 |
TWI363102B (en) | 2012-05-01 |
KR101063788B1 (ko) | 2011-09-08 |
KR20090116830A (ko) | 2009-11-11 |
CN101115860B (zh) | 2011-08-24 |
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