JPWO2006077735A1 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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Abstract
Description
なお、先行技術としては、上記以外にも、可撓性の電極(編み込み電極)を用いるもの(日本国特許出願2004−055446号(国際出願PCT/JP2005/002306))や、トランスを介して高周波電力を供給するもの(日本国特許出願2003−056772号(国際出願PCT/JP2004/002735、国際公開WO2004/079813)がある。
基板を収容する処理室と、
前記処理室を外部から囲うように配置された加熱部と、
前記処理室内に処理ガスを供給するガス供給部と、
前記処理室内から処理ガスを排出するガス排出部と、
前記加熱部の内側に設けられ、前記処理ガスをプラズマ励起させるための少なくとも一対の電極と、
前記電極を気密に収容する誘電体から成る保護容器と、
前記電極に電気的に接続され、前記保護容器に収容される受電部と、
高周波電力が印加される給電部であって、少なくとも前記保護容器の壁を前記受電部との間に介在させた状態で前記受電部に近接して設けられる前記給電部と、
を備え、
前記給電部から前記受電部への電力供給が電磁気結合により成される基板処理装置が提供される。
本発明の好ましい実施例では、積載された基板を処理する縦型の反応管と、処理用の複数のガスを基板に供給するためのガス供給系と、ガス供給系から基板に供給されるガスを一旦蓄えて、積載された基板にガスを均一に供給するバッファ室と、バッファ室の中にプラズマを生成するための一対の容量結合性電極を設けた装置において、プラズマを生成するための電極をバッファ室内に設置した絶縁体からなる電極保護管内に封入している。そして、バッファ室に設置した電極保護管内に封入した電極に対して、誘導結合により、放電電力を供給する。
ステップ1では、プラズマ励起の必要なNH3ガスと、プラズマ励起の必要のないDCSガスとを併行して流す。まずガス供給管232aに設けたバルブ243a、及びガス排気管231に設けたバルブ243dを共に開けて、ガス供給管232aからマスフローコントローラ243aにより流量調整されたNH3ガスをノズル233のガス供給孔248bからバッファ室237へ噴出し、放電電極269間に高周波電源273から整合器272、誘導コイル312、結合コイル311を介して高周波電力を印加してNH3をプラズマ励起し、活性種として処理室201に供給しつつガス排気管231から排気する。NH3ガスをプラズマ励起することにより活性種として流すときは、バルブ243dを適正に調整して処理室201内圧力を10〜100Paとする。マスフローコントローラ241aで制御するNH3の供給流量は1000〜10000sccmである。NH3をプラズマ励起することにより得られた活性種にウエハ200を晒す時間は2〜120秒間である。このときのヒータ207の温度はウエハが500〜600℃になるよう設定してある。NH3は反応温度が高いため、上記ウエハ温度では反応しないので、プラズマ励起することにより活性種としてから流すようにしており、このためウエハ温度は設定した低い温度範囲のままで行える。
ステップ2では、ガス供給管232aのバルブ243aを閉めて、NH3の供給を止めるが、引続きガス溜め247へ供給を継続する。ガス溜め247に所定圧、所定量のDCSが溜まったら上流側のバルブ243bも閉めて、ガス溜め247にDCSを閉じ込めておく。また、ガス排気管231のバルブ243dは開いたままにし真空ポンプ246により、処理室201を20Pa以下に排気し、残留NH3を処理室201から排除する。また、この時にはN2等の不活性ガスを処理室201に供給すると、更に残留NH3を排除する効果が高まる。ガス溜め247内には、圧力が20000Pa以上になるようにDCSを溜める。また、ガス溜め247と処理室201との間のコンダクタンスが1.5×10−3m3/s以上になるように装置を構成する。また、反応管203の容積とこれに対する必要なガス溜め247の容積との比として考えると、反応管203の容積1001(リットル)の場合においては、100〜300ccであることが好ましく、容積比としてはガス溜め247は反応室容積の1/1000〜3/1000倍とすることが好ましい。
ステップ3では、処理室201の排気が終わったらガス排気管231のバルブ243cを閉じて排気を止める。ガス供給管232bの下流側のバルブ243cを開く。これによりガス溜め247に溜められたDCSが処理室201に一気に供給される。このときガス排気管231のバルブ243dが閉じられているので、処理室201内の圧力は急激に上昇して約931Pa(7Torr)まで昇圧される。DCSを供給するための時間は2〜4秒設定し、その後上昇した圧力雰囲気中に晒す時間を2〜4秒に設定し、合計6秒とした。このときのウエハ温度はNH3の供給時と同じく、500〜600℃である。DCSの供給により、下地膜上のNH3とDCSとが表面反応して、ウエハ200上にSiN膜が成膜される。成膜後、バルブ243cを閉じ、バルブ243dを開けて処理室201を真空排気し、残留するDCSの成膜に寄与した後のガスを排除する。また、この時にはN2等の不活性ガスを処理室201に供給すると、更に残留するDCSの成膜に寄与した後のガスを処理室201から排除する効果が高まる。またバルブ243bを開いてガス溜め247へのDCSの供給を開始する。
その結果、本発明は、処理ガスをプラズマ励起させて基板を処理する基板処理装置に特に好適に利用できる。
Claims (11)
- 基板を収容する処理室と、
前記処理室を外部から囲うように配置された加熱部と、
前記処理室内に処理ガスを供給するガス供給部と、
前記処理室内から処理ガスを排出するガス排出部と、
前記加熱部の内側に設けられ、前記処理ガスをプラズマ励起させるための少なくとも一対の電極と、
前記電極を気密に収容する誘電体から成る保護容器と、
前記電極に電気的に接続され、前記保護容器に収容される受電部と、
高周波電力が印加される給電部であって、少なくとも前記保護容器の壁を前記受電部との間に介在させた状態で前記受電部に近接して設けられる前記給電部と、
を備え、
前記給電部から前記受電部への電力供給が電磁気結合により成される基板処理装置。 - 前記処理ガスをプラズマ励起させるためのプラズマ発生領域が前記保護容器の外側に形成される請求項1記載の基板処理装置。
- 前記処理室は石英から成る反応管の内側に形成され、前記保護容器が前記反応管の内側に収容される請求項1記載の基板処理装置。
- 前記保護容器の少なくとも一部の壁は、前記反応管の壁の一部から構成される請求項3記載の基板処理装置。
- 前記保護容器内には不活性ガスが充填され、前記保護容器内の圧力を100Torr以上とする請求項1記載の基板処理装置。
- 前記保護容器内の圧力を大気圧以上とする請求項5記載の基板処理装置。
- 前記受電部は前記一対の電極間に接続された結合コイルで、前記給電部は前記結合コイルと誘電結合される誘電コイルである請求項1記載の基板処理装置。
- 前記一対の電極間には共振用のコンデンサ部が更に設けられる請求項7記載の基板処理装置。
- 前記共振用のコンデンサ部は、石英板を金属板で挟んで形成されるコンデンサである請求項8記載の基板処理装置。
- 前記石英板を前記金属板で挟んで形成される前記コンデンサを複数層設けた請求項9記載の基板処理装置。
- 前記受電部は前記一対の電極のそれぞれに接続された静電結合板であって、前記それぞれの静電結合板は物理的に分離して設けられ、
前記給電部は前記それぞれの静電結合板に対向する電力供給板であって、前記それぞれの電力供給板は物理的に分離して設けられる請求項1記載の基板処理装置。
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