KR20070059099A - 기판 처리 장치 - Google Patents
기판 처리 장치 Download PDFInfo
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- KR20070059099A KR20070059099A KR1020077005924A KR20077005924A KR20070059099A KR 20070059099 A KR20070059099 A KR 20070059099A KR 1020077005924 A KR1020077005924 A KR 1020077005924A KR 20077005924 A KR20077005924 A KR 20077005924A KR 20070059099 A KR20070059099 A KR 20070059099A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (11)
- 기판을 수용하는 처리실과,상기 처리실을 외부로부터 둘러싸도록 배치된 가열부와,상기 처리실 내에 처리 가스를 공급하는 가스 공급부와,상기 처리실 내에서 처리 가스를 배출하는 가스 배출부와,상기 가열부의 내측에 설치되고, 상기 처리 가스를 플라즈마 여기시키기 위한 적어도 한쌍의 전극과,상기 전극을 기밀하게 수용하는 유전체로 이루어지는 보호 용기와,상기 전극에 전기적으로 접속되고, 상기 보호 용기에 수용되는 수전부(受電部)와,고주파 전력이 인가되는 급전부(給電部)로서, 적어도 상기 보호 용기의 벽을 상기 수전부와의 사이에 개재시킨 상태에서 상기 수전부에 근접하여 설치되는 상기 급전부를 구비하고,상기 급전부로부터 상기 수전부로의 전력 공급이 전자기 결합에 의해 이루어지는, 기판 처리 장치.
- 청구항 1에 있어서, 상기 처리 가스를 플라즈마 여기시키기 위한 플라즈마 발생 영역이 상기 보호 용기의 외측에 형성되는, 기판 처리 장치.
- 청구항 1에 있어서, 상기 처리실은 석영으로 이루어지는 반응관의 내측에 형성되고, 상기 보호 용기가 상기 반응관의 내측에 수용되는, 기판 처리 장치.
- 청구항 3에 있어서,상기 보호 용기의 적어도 일부의 벽은 상기 반응관의 벽의 일부로 구성되는, 기판 처리 장치.
- 청구항 1에 있어서,상기 보호 용기내에는 불활성 가스가 충전되고, 상기 보호 용기 내의 압력을 100Torr 이상으로 하는, 기판 처리 장치.
- 청구항 5에 있어서,상기 보호 용기 내의 압력을 대기압 이상으로 하는, 기판 처리 장치.
- 청구항 1에 있어서,상기 수전부는 상기 한쌍의 전극사이에 접속된 결합 코일이고, 상기 급전부는 상기 결합 코일과 유전 결합되는 유전 코일인, 기판 처리 장치.
- 청구항 7에 있어서,상기 한쌍의 전극간에는 공진용의 콘덴서부가 더 설치되는, 기판 처리 장치.
- 청구항 8에 있어서,상기 공진용 콘덴서부는 석영판을 금속판으로 끼워 형성되는 콘덴서인, 기판 처리 장치.
- 청구항 9에 있어서,상기 석영판을 상기 금속판으로 끼워 형성되는 상기 콘덴서를 복수층 설치한, 기판 처리 장치.
- 청구항 1에 있어서,상기 수전부는 상기 한쌍의 전극의 각각에 접속된 정전 결합판으로서, 상기 각각의 정전 결합판은 물리적으로 분리되어 설치되고,상기 급전부는 상기 각각의 정전 결합판에 대향하는 전력 공급판으로서, 상기 각각의 전력 공급판은 물리적으로 분리되어 설치되는, 기판 처리 장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2004379002 | 2004-12-28 | ||
JPJP-P-2004-00379002 | 2004-12-28 | ||
PCT/JP2005/024046 WO2006077735A1 (ja) | 2004-12-28 | 2005-12-28 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
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KR20070059099A true KR20070059099A (ko) | 2007-06-11 |
KR100876050B1 KR100876050B1 (ko) | 2008-12-26 |
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KR1020077005924A KR100876050B1 (ko) | 2004-12-28 | 2005-12-28 | 기판 처리 장치 |
Country Status (4)
Country | Link |
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US (1) | US8453600B2 (ko) |
JP (2) | JP4526540B2 (ko) |
KR (1) | KR100876050B1 (ko) |
WO (1) | WO2006077735A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102090579B1 (ko) | 2019-07-10 | 2020-03-18 | 노청담 | 선박용 히팅 케이블의 마감 처리방법 및 그 방법에 의해 제조된 선박용 히팅 케이블 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030164143A1 (en) | 2002-01-10 | 2003-09-04 | Hitachi Kokusai Electric Inc. | Batch-type remote plasma processing apparatus |
KR100829327B1 (ko) * | 2002-04-05 | 2008-05-13 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반응 용기 |
US8251012B2 (en) * | 2005-03-01 | 2012-08-28 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device producing method |
JP5136574B2 (ja) | 2009-05-01 | 2013-02-06 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5787284B2 (ja) | 2010-06-30 | 2015-09-30 | 国立大学法人名古屋大学 | 反応種供給装置および表面等処理装置 |
JP5805461B2 (ja) * | 2010-10-29 | 2015-11-04 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP5815967B2 (ja) * | 2011-03-31 | 2015-11-17 | 東京エレクトロン株式会社 | 基板洗浄装置及び真空処理システム |
KR101427726B1 (ko) * | 2011-12-27 | 2014-08-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
JP5793103B2 (ja) * | 2012-04-13 | 2015-10-14 | 岩谷産業株式会社 | 混合気体の供給方法及び供給装置 |
JP6336719B2 (ja) * | 2013-07-16 | 2018-06-06 | 株式会社ディスコ | プラズマエッチング装置 |
JP6415215B2 (ja) * | 2014-09-26 | 2018-10-31 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
WO2016147296A1 (ja) * | 2015-03-16 | 2016-09-22 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
JP2017183392A (ja) | 2016-03-29 | 2017-10-05 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
JP6780557B2 (ja) * | 2017-03-21 | 2020-11-04 | 東京エレクトロン株式会社 | ガス供給部材及びガス処理装置 |
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KR102090579B1 (ko) | 2019-07-10 | 2020-03-18 | 노청담 | 선박용 히팅 케이블의 마감 처리방법 및 그 방법에 의해 제조된 선박용 히팅 케이블 |
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