JPWO2006070473A1 - 半導体装置及びその動作制御方法 - Google Patents
半導体装置及びその動作制御方法 Download PDFInfo
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- JPWO2006070473A1 JPWO2006070473A1 JP2006550539A JP2006550539A JPWO2006070473A1 JP WO2006070473 A1 JPWO2006070473 A1 JP WO2006070473A1 JP 2006550539 A JP2006550539 A JP 2006550539A JP 2006550539 A JP2006550539 A JP 2006550539A JP WO2006070473 A1 JPWO2006070473 A1 JP WO2006070473A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims description 12
- 230000015654 memory Effects 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000000694 effects Effects 0.000 claims abstract description 16
- 239000000872 buffer Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000002784 hot electron Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0491—Virtual ground arrays
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
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Abstract
Description
Claims (23)
- 半導体基板と、
ワード線と、
グローバルビット線と、
前記半導体基板にローカルビット線となる反転層を形成して該反転層を前記グローバルビット線に電気的に接続する反転ゲートと、
前記反転層をソース及びドレインとして用いるメモリセルと
を含む半導体装置。 - 前記反転層は、金属配線を介して前記グローバルビット線に接続される請求項1に記載の半導体装置。
- 前記メモリセルは、隣接する前記反転ゲート間に形成される請求項1に記載の半導体装置。
- 前記反転ゲートに所定の電圧を供給して書込み又は消去を行うメモリセルを選択する選択回路を更に含む請求項1に記載の半導体装置。
- 前記反転ゲートは、前記ソースとなる反転層を形成する第1の反転ゲートと、前記ドレインとなる反転層を形成する第2の反転ゲートと、該第1の反転ゲートと該第2の反転ゲート間に設けられた第3の反転ゲートとを含み、
書込み時、前記第1乃至第3の反転ゲートに所定の電圧を供給して書込みを行うメモリセルを選択する選択回路を更に含む請求項1に記載の半導体装置。 - 前記選択回路は、書込み時、前記第3の反転ゲートに、前記半導体基板中のソース及びドレイン間に形成されるチャネル領域のうち該第3の反転ゲート下のチャネル領域を小さく形成するための電圧を供給する請求項5に記載の半導体装置。
- 前記反転ゲートは更に、前記第1の反転ゲートから見て第3の反転ゲートとは反対側の位置に設けられた第4の反転ゲートを含み、
前記選択回路は、書込み時、前記第4の反転ゲートに半導体基板中に形成されるチャネルをカットするための電圧を供給する請求項5に記載の半導体装置。 - 書込み時、前記反転層に書込み電圧を供給する書込電圧供給回路を更に含む請求項1から請求項7のいずれか一項に記載の半導体装置。
- 消去時、前記メモリセルに注入された電子をFNトンネル効果を用いて前記半導体基板側に引き抜くための電圧を前記ワード線に供給する電圧供給回路を更に含む請求項1から請求項4のいずれか一項に記載の半導体装置。
- 消去時、前記メモリセルに注入された電子をFNトンネル効果を用いてワード線側に引き抜くための電圧を該ワード線に供給する電圧供給回路を更に含む請求項1から請求項4のいずれか一項に記載の半導体装置。
- 消去時、前記メモリセルに注入された電子をFNトンネル効果を用いて引き抜くための電圧を前記反転ゲートに供給する電圧供給回路を更に含む請求項1から請求項4のいずれか一項に記載の半導体装置。
- 複数本の前記グローバルビット線からなるコラムセットを複数有し、共通の選択信号によって該コラムセット内の所定のグローバルビット線をそれぞれに対応するページバッファに接続するデコーダを更に含む請求項1に記載の半導体装置。
- 前記反転層は、複数のメモリセルで共有される請求項1に記載の半導体装置。
- 前記メモリセルは、前記反転ゲート間の絶縁膜の両端に1ビットづつ記憶させることによって1セル当たり2ビットを記憶する請求項1から13のいずれか一項に記載の半導体装置。
- 前記メモリセルは、SONOS型である請求項1から請求項14のいずれか一項に記載の半導体装置。
- 前記半導体装置は、半導体記憶装置である請求項1から請求項15のいずれか一項に記載の半導体装置。
- 反転ゲートに所定の電圧を供給してローカルビット線となる反転層を半導体基板に形成することにより該反転層をグローバルビット線に電気的に接続する第1のステップと、
ワード線を選択する第2のステップとを含む方法。 - 前記反転ゲートは、ソースとなる反転層を形成する第1の反転ゲートと、ドレインとなる反転層を形成する第2の反転ゲートと、該第1の反転ゲートと該第2の反転ゲート間に設けられた第3の反転ゲートとを含み、
前記第1のステップは、書込み時、所定の電圧を前記第1乃至第3の反転ゲートに供給する請求項17に記載の方法。 - 前記第1のステップは、前記第3の反転ゲートに、前記半導体基板中のソース及びドレイン間に形成されるチャネル領域のうち該第3の反転ゲート下のチャネル領域を小さく形成するための電圧を供給するステップを含む請求項18に記載の方法。
- 前記反転ゲートは更に、前記第1の反転ゲートから見て第3の反転ゲートとは反対の位置に設けられた第4の反転ゲートを含み、
前記第1のステップは、書込み時、前記半導体基板に形成されるチャネルをカットするための電圧を前記第4の反転ゲートに供給するステップを更に含む請求項18に記載の方法。 - 前記反転ゲートは、ソースとなる反転層を形成する第1の反転ゲートと、ドレインとなる反転層を形成する第2の反転ゲートと、該第1の反転ゲートと該第2の反転ゲート間に設けられた第3の反転ゲートとを含み、
書込み時、前記第3の反転ゲートの両端の絶縁膜に1ビットづつ記憶させるステップを含む請求項17に記載の方法。 - 書込み時、前記グローバルビット線を介して、書込み電圧を前記反転層に供給するステップを更に含む請求項17から請求項21のいずれか一項に記載の方法。
- 消去時、メモリセルに注入された電子をFNトンネル効果を用いて前記半導体基板側に引き抜くための電圧を前記ワード線に供給するステップを更に含む請求項17に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/019645 WO2006070473A1 (ja) | 2004-12-28 | 2004-12-28 | 半導体装置及びその動作制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2006070473A1 true JPWO2006070473A1 (ja) | 2008-06-12 |
JP5392985B2 JP5392985B2 (ja) | 2014-01-22 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006550539A Expired - Fee Related JP5392985B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体装置及びその動作制御方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7321511B2 (ja) |
EP (1) | EP1833091A4 (ja) |
JP (1) | JP5392985B2 (ja) |
CN (1) | CN101091252B (ja) |
TW (1) | TWI420649B (ja) |
WO (1) | WO2006070473A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
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US8448102B2 (en) | 2006-03-09 | 2013-05-21 | Tela Innovations, Inc. | Optimizing layout of irregular structures in regular layout context |
US7763534B2 (en) | 2007-10-26 | 2010-07-27 | Tela Innovations, Inc. | Methods, structures and designs for self-aligning local interconnects used in integrated circuits |
US8658542B2 (en) | 2006-03-09 | 2014-02-25 | Tela Innovations, Inc. | Coarse grid design methods and structures |
US8653857B2 (en) | 2006-03-09 | 2014-02-18 | Tela Innovations, Inc. | Circuitry and layouts for XOR and XNOR logic |
US9563733B2 (en) | 2009-05-06 | 2017-02-07 | Tela Innovations, Inc. | Cell circuit and layout with linear finfet structures |
US9009641B2 (en) | 2006-03-09 | 2015-04-14 | Tela Innovations, Inc. | Circuits with linear finfet structures |
US9230910B2 (en) | 2006-03-09 | 2016-01-05 | Tela Innovations, Inc. | Oversized contacts and vias in layout defined by linearly constrained topology |
US9035359B2 (en) | 2006-03-09 | 2015-05-19 | Tela Innovations, Inc. | Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods |
US8541879B2 (en) | 2007-12-13 | 2013-09-24 | Tela Innovations, Inc. | Super-self-aligned contacts and method for making the same |
US7956421B2 (en) | 2008-03-13 | 2011-06-07 | Tela Innovations, Inc. | Cross-coupled transistor layouts in restricted gate level layout architecture |
US7446352B2 (en) | 2006-03-09 | 2008-11-04 | Tela Innovations, Inc. | Dynamic array architecture |
US8839175B2 (en) | 2006-03-09 | 2014-09-16 | Tela Innovations, Inc. | Scalable meta-data objects |
US7917879B2 (en) | 2007-08-02 | 2011-03-29 | Tela Innovations, Inc. | Semiconductor device with dynamic array section |
JP2007281137A (ja) * | 2006-04-05 | 2007-10-25 | Sharp Corp | 不揮発性半導体記憶装置およびその製造方法、前記不揮発性半導体記憶装置を備えてなる携帯電子機器 |
US7838920B2 (en) * | 2006-12-04 | 2010-11-23 | Micron Technology, Inc. | Trench memory structures and operation |
US8667443B2 (en) | 2007-03-05 | 2014-03-04 | Tela Innovations, Inc. | Integrated circuit cell library for multiple patterning |
US8453094B2 (en) | 2008-01-31 | 2013-05-28 | Tela Innovations, Inc. | Enforcement of semiconductor structure regularity for localized transistors and interconnect |
US7939443B2 (en) | 2008-03-27 | 2011-05-10 | Tela Innovations, Inc. | Methods for multi-wire routing and apparatus implementing same |
SG10201608214SA (en) | 2008-07-16 | 2016-11-29 | Tela Innovations Inc | Methods for cell phasing and placement in dynamic array architecture and implementation of the same |
US9122832B2 (en) | 2008-08-01 | 2015-09-01 | Tela Innovations, Inc. | Methods for controlling microloading variation in semiconductor wafer layout and fabrication |
US8661392B2 (en) | 2009-10-13 | 2014-02-25 | Tela Innovations, Inc. | Methods for cell boundary encroachment and layouts implementing the Same |
US9159627B2 (en) | 2010-11-12 | 2015-10-13 | Tela Innovations, Inc. | Methods for linewidth modification and apparatus implementing the same |
US8363491B2 (en) * | 2011-01-28 | 2013-01-29 | Freescale Semiconductor, Inc. | Programming a non-volatile memory |
US11041764B2 (en) * | 2016-02-29 | 2021-06-22 | Washington University | Self-powered sensors for long-term monitoring |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001156275A (ja) * | 1999-09-17 | 2001-06-08 | Hitachi Ltd | 半導体集積回路 |
JP2004152977A (ja) * | 2002-10-30 | 2004-05-27 | Renesas Technology Corp | 半導体記憶装置 |
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KR0167874B1 (ko) * | 1993-06-29 | 1999-01-15 | 사토 후미오 | 반도체 기억장치 |
KR20010006135A (ko) * | 1997-04-11 | 2001-01-26 | 프로그래머블 실리콘 솔루션즈 | 전기적 소거가능 비휘발성 메모리 |
JPH11110967A (ja) * | 1997-10-01 | 1999-04-23 | Nec Corp | 半導体メモリ装置 |
JPH11328957A (ja) * | 1998-05-19 | 1999-11-30 | Oki Micro Design:Kk | 半導体記憶装置 |
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US6809949B2 (en) * | 2002-05-06 | 2004-10-26 | Symetrix Corporation | Ferroelectric memory |
JP2005056889A (ja) * | 2003-08-04 | 2005-03-03 | Renesas Technology Corp | 半導体記憶装置およびその製造方法 |
JP2005191542A (ja) * | 2003-12-01 | 2005-07-14 | Renesas Technology Corp | 半導体記憶装置 |
JP2006060030A (ja) * | 2004-08-20 | 2006-03-02 | Renesas Technology Corp | 半導体記憶装置 |
US7158420B2 (en) * | 2005-04-29 | 2007-01-02 | Macronix International Co., Ltd. | Inversion bit line, charge trapping non-volatile memory and method of operating same |
-
2004
- 2004-12-28 EP EP04808000A patent/EP1833091A4/en not_active Withdrawn
- 2004-12-28 JP JP2006550539A patent/JP5392985B2/ja not_active Expired - Fee Related
- 2004-12-28 CN CN2004800447293A patent/CN101091252B/zh not_active Expired - Fee Related
- 2004-12-28 WO PCT/JP2004/019645 patent/WO2006070473A1/ja active Application Filing
-
2005
- 2005-12-22 US US11/316,800 patent/US7321511B2/en not_active Expired - Fee Related
- 2005-12-27 TW TW094146638A patent/TWI420649B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001156275A (ja) * | 1999-09-17 | 2001-06-08 | Hitachi Ltd | 半導体集積回路 |
JP2004152977A (ja) * | 2002-10-30 | 2004-05-27 | Renesas Technology Corp | 半導体記憶装置 |
Also Published As
Publication number | Publication date |
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CN101091252A (zh) | 2007-12-19 |
EP1833091A1 (en) | 2007-09-12 |
WO2006070473A1 (ja) | 2006-07-06 |
TWI420649B (zh) | 2013-12-21 |
US7321511B2 (en) | 2008-01-22 |
CN101091252B (zh) | 2012-09-05 |
JP5392985B2 (ja) | 2014-01-22 |
TW200636974A (en) | 2006-10-16 |
EP1833091A4 (en) | 2008-08-13 |
US20060256617A1 (en) | 2006-11-16 |
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