JPS6482676A - Iii-v compound semiconductor field-effect transistor and manufacture thereof - Google Patents

Iii-v compound semiconductor field-effect transistor and manufacture thereof

Info

Publication number
JPS6482676A
JPS6482676A JP24200387A JP24200387A JPS6482676A JP S6482676 A JPS6482676 A JP S6482676A JP 24200387 A JP24200387 A JP 24200387A JP 24200387 A JP24200387 A JP 24200387A JP S6482676 A JPS6482676 A JP S6482676A
Authority
JP
Japan
Prior art keywords
source
plane
drain regions
ale
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24200387A
Other languages
English (en)
Inventor
Haruo Sunakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24200387A priority Critical patent/JPS6482676A/ja
Publication of JPS6482676A publication Critical patent/JPS6482676A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP24200387A 1987-09-25 1987-09-25 Iii-v compound semiconductor field-effect transistor and manufacture thereof Pending JPS6482676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24200387A JPS6482676A (en) 1987-09-25 1987-09-25 Iii-v compound semiconductor field-effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24200387A JPS6482676A (en) 1987-09-25 1987-09-25 Iii-v compound semiconductor field-effect transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6482676A true JPS6482676A (en) 1989-03-28

Family

ID=17082809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24200387A Pending JPS6482676A (en) 1987-09-25 1987-09-25 Iii-v compound semiconductor field-effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6482676A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302842A (en) * 1992-07-20 1994-04-12 Bell Communications Research, Inc. Field-effect transistor formed over gate electrode
US9587310B2 (en) 2001-03-02 2017-03-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918678A (ja) * 1982-07-21 1984-01-31 Sony Corp 半導体装置の製法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918678A (ja) * 1982-07-21 1984-01-31 Sony Corp 半導体装置の製法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302842A (en) * 1992-07-20 1994-04-12 Bell Communications Research, Inc. Field-effect transistor formed over gate electrode
US5401665A (en) * 1992-07-20 1995-03-28 Bell Communications Research, Inc. Method of fabricating a field-effect transistor over gate electrode
US9587310B2 (en) 2001-03-02 2017-03-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US10280509B2 (en) 2001-07-16 2019-05-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques

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