JPS6466973A - Preparation of field effect transistor - Google Patents
Preparation of field effect transistorInfo
- Publication number
- JPS6466973A JPS6466973A JP22465887A JP22465887A JPS6466973A JP S6466973 A JPS6466973 A JP S6466973A JP 22465887 A JP22465887 A JP 22465887A JP 22465887 A JP22465887 A JP 22465887A JP S6466973 A JPS6466973 A JP S6466973A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- gaas layer
- electrode
- selectively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To make it possible to manufacture a field effect transistor having large mutual conductance and capable of operating at high speed with good repeatability, by selectively growing an N-type semiconductor layer by an MOCVD method using an insulating side wall and a gate electrode as a mask and then etching it such that it becomes partially thin. CONSTITUTION:An undoped GaAs layer 3, an N<+> AlGaAs layer 2 and an undoped GaAs layer 1 are sequentially superposed on a semi-insulating GaAs substrate 4 and a gate electrode 5 is formed to form insulating side walls 6a and 6b comprising SiO2. An N<+> GaAs layer 7 is selectively grown by an MOCVD method using AsH3 and trimethylgalium and thinned by selectively etching the layer 7. Finally, an ohmic electrode (Au Ge) is provided on the thinned part to form a source electrode 8 and a drain electrode 9. Since the N<+> GaAs layer can be formed thickly, sheet resistance is decreased and since the part right beneath the source and drain electrodes is thin because of the etching, contact resistance can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22465887A JPS6466973A (en) | 1987-09-07 | 1987-09-07 | Preparation of field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22465887A JPS6466973A (en) | 1987-09-07 | 1987-09-07 | Preparation of field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6466973A true JPS6466973A (en) | 1989-03-13 |
Family
ID=16817176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22465887A Pending JPS6466973A (en) | 1987-09-07 | 1987-09-07 | Preparation of field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6466973A (en) |
-
1987
- 1987-09-07 JP JP22465887A patent/JPS6466973A/en active Pending
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